Nexperia USA Inc. PBSS4120T,215
- Part Number:
- PBSS4120T,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3068781-PBSS4120T,215
- Description:
- TRANS NPN 20V 1A SOT23
- ECAD Model:
-
- Datasheet:
- PBSS4120T,215
Nexperia USA Inc. PBSS4120T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS4120T,215.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation480mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPBSS4120
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation480mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 50mA, 1A
- Collector Emitter Breakdown Voltage20V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- hFE Min300
- Height1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS4120T,215 Overview
In this device, the DC current gain is 300 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS4120T,215 Features
the DC current gain for this device is 300 @ 500mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4120T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4120T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 300 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS4120T,215 Features
the DC current gain for this device is 300 @ 500mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4120T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4120T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS4120T,215 More Descriptions
PBSS4120T Series 20 V 1 A SMT NPN Low VCEsat (BISS) Transistor - SOT-23-3
Trans GP BJT NPN 20V 1A 480mW Automotive 3-Pin TO-236AB T/R
20V 480mW 1A 420@1A,2V 100MHz 250mV@1A,50mA NPN 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:1A; DC Current Gain Max (hfe):470 ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 470hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 110V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 200; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: 30V
Trans GP BJT NPN 20V 1A 480mW Automotive 3-Pin TO-236AB T/R
20V 480mW 1A 420@1A,2V 100MHz 250mV@1A,50mA NPN 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:1A; DC Current Gain Max (hfe):470 ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 470hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 110V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 200; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: 30V
The three parts on the right have similar specifications to PBSS4120T,215.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTerminationCase ConnectionTurn On Time-Max (ton)Power - MaxView Compare
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PBSS4120T,2154 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-334.535924gSILICON150°C TJTape & Reel (TR)2003e3Active1 (Unlimited)3EAR99Tin (Sn)480mWDUALGULL WING260100MHz40PBSS412031Single480mWSWITCHING100MHzNPNNPN20V1A300 @ 500mA 2V100nA ICBO250mV @ 50mA, 1A20V100MHz250mV20V30V5V3001mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free------ -
4 WeeksSurface MountSurface MountTO-243AA34.535924gSILICON150°C TJTape & Reel (TR)2006e3Active1 (Unlimited)3EAR99-2.1W-FLAT-130MHz-PBSS304P31Single2.1WSWITCHING130MHzPNPPNP60V4.2A150 @ 2A 2V100nA ICBO310mV @ 210mA, 4.2A60V130MHz-60V60V5V2006.35mm12.7mm6.35mmNo SVHCNoROHS3 CompliantLead FreeTinSMD/SMTCOLLECTOR80ns-
-
8 WeeksSurface MountSurface MountSC-101, SOT-8833-SILICON150°C TJTape & Reel (TR)2002e3Active1 (Unlimited)3EAR99Tin (Sn)430mWBOTTOM--300MHz-PBSS354031Single430mWSWITCHING300MHzPNPPNP40V500mA150 @ 100mA 2V100nA ICBO350mV @ 50mA, 500mA40V300MHz-40V40V6V-----NoROHS3 CompliantLead Free--COLLECTOR--
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4 WeeksSurface MountSurface MountTO-243AA4--150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)--Tin (Sn)2.5W-----PBSS4032P3-Single--115MHz-PNP400mV4.2A150 @ 2A 2V100nA400mV @ 200mA, 4A30V--30V30V-5V200----NoROHS3 Compliant-----2.5W
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