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NTTS2P02R2G

ON Semiconductor NTTS2P02R2G

Part Number:
NTTS2P02R2G
Manufacturer:
ON Semiconductor
Ventron No:
3813742-NTTS2P02R2G
Description:
MOSFET P-CH 20V 2.4A 8MICRO
ECAD Model:
Datasheet:
NTTS2P02R2G

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Specifications
ON Semiconductor NTTS2P02R2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTTS2P02R2G.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Terminal Finish
    MATTE TIN
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • JESD-30 Code
    S-PDSO-G8
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    780mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    90m Ω @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    550pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    2.4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Drain Current-Max (Abs) (ID)
    2.4A
  • Drain-source On Resistance-Max
    0.09Ohm
  • DS Breakdown Voltage-Min
    20V
  • RoHS Status
    ROHS3 Compliant
Description
NTTS2P02R2G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 550pF @ 16V.The drain current is the maximum continuous current this device can conduct, which is 2.4A.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).

NTTS2P02R2G Features
a 20V drain to source voltage (Vdss)


NTTS2P02R2G Applications
There are a lot of Rochester Electronics, LLC
NTTS2P02R2G applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
NTTS2P02R2G More Descriptions
Power MOSFET 20V 2.4A 90 mOhm Single P-Channel Micro8
TRANS MOSFET P-CH 20V 3.25A 8PIN MICRO - Tape and Reel
MOSFETs- Power and Small Signal 20V 2.4A P-Channel
2400 mA 20 V P-CHANNEL Si SMALL SIGNAL MOSFET
Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount P-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 2.4A Ta 2.4A 780mW 31ns
MOSFET PWR P-CHAN SGL 20V 8MICRO
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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