ON Semiconductor NTD24N06LT4G

NTD24N06LT4G Overview
A device's maximum input capacitance is 1140pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 23 ns.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.This device uses no drive voltage (5V) to reduce its overall power consumption.

NTD24N06LT4G Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 72A.


NTD24N06LT4G Applications
There are a lot of ON Semiconductor
NTD24N06LT4G applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters