ON Semiconductor NTD20N06-001

Name: NTD20N06-001
Brand: ON Semiconductor
SKU: 3554487-NTD20N06-001
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD20N06-001

Manufacturer:: ON Semiconductor

Ventron No:: 3554487-NTD20N06-001

Description:: MOSFET N-CH 60V 20A IPAK

ECAD Model:

Datasheet:: NTD20N06-001

Specifications

ON Semiconductor NTD20N06-001 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD20N06-001.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
20A
Power Dissipation-Max
1.88W Ta 60W Tj
Element Configuration
Single
Power Dissipation
60W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
46m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1015pF @ 25V
Current - Continuous Drain (Id) @ 25°C
20A Ta
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Rise Time
60.5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
37.1 ns
Turn-Off Delay Time
27.1 ns
Continuous Drain Current (ID)
20A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

NTD20N06-001 Overview
A device's maximal input capacitance is 1015pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27.1 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).

NTD20N06-001 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 27.1 ns

NTD20N06-001 Applications
There are a lot of ON Semiconductor
NTD20N06-001 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

NTD20N06-001 More Descriptions

MOSFETs- Power and Small Signal 60V 20A N-Channel No-Cancel/No-Return
MOSFET N-CH 60V 20A IPAK;
OEMs, CMs ONLY (NO BROKERS)

Product Comparison

The three parts on the right have similar specifications to NTD20N06-001.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated DC

Technology

Current Rating

Power Dissipation-Max

Element Configuration

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

RoHS Status

Lead Free

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Operating Mode

Case Connection

Transistor Application

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

View Compare
NTD20N06-001

ON Semiconductor

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-55°C~175°C TJ

Tube

2009

Obsolete

1 (Unlimited)

60V

MOSFET (Metal Oxide)

20A

1.88W Ta 60W Tj

Single

60W

N-Channel

46m Ω @ 10A, 10V

4V @ 250μA

1015pF @ 25V

20A Ta

30nC @ 10V

60.5ns

10V

±20V

37.1 ns

27.1 ns

20A

20V

60V

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD20N03L27

ON Semiconductor

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~150°C TJ

Tube

2007

Obsolete

1 (Unlimited)

30V

MOSFET (Metal Oxide)

20A

1.75W Ta 74W Tc

Single

74W

N-Channel

27m Ω @ 10A, 5V

2V @ 250μA

1260pF @ 25V

20A Ta

18.9nC @ 10V

137ns

4V 5V

±20V

31 ns

38 ns

20A

20V

30V

Non-RoHS Compliant

Contains Lead

SILICON

e0

2

EAR99

Tin/Lead (Sn80Pb20)

AVALANCHE RATED

FET General Purpose Power

GULL WING

235

not_compliant

NOT SPECIFIED

3

R-PSSO-G2

Not Qualified

1

ENHANCEMENT MODE

DRAIN

SWITCHING

0.031Ohm

60A

288 mJ

NTD20N06-001 vs NTD20N03L27
NTD24N06-001

ON Semiconductor

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-55°C~175°C TJ

Tube

2009

Obsolete

1 (Unlimited)

60V

MOSFET (Metal Oxide)

24A

1.36W Ta 62.5W Tj

Single

62.5W

N-Channel

42m Ω @ 10A, 10V

4V @ 250μA

1200pF @ 25V

24A Ta

48nC @ 10V

24ns

10V

±20V

27 ns

25 ns

24A

20V

60V

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD20N06-001 vs NTD24N06-001
NTD20N03L27-001

ON Semiconductor

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-55°C~150°C TJ

Tube

2003

Obsolete

1 (Unlimited)

30V

MOSFET (Metal Oxide)

20A

1.75W Ta 74W Tc

Single

74W

N-Channel

27m Ω @ 10A, 5V

2V @ 250μA

1260pF @ 25V

20A Ta

18.9nC @ 10V

137ns

4V 5V

±20V

31 ns

38 ns

20A

20V

30V

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD20N06-001 vs NTD20N03L27-001