ON Semiconductor NTA4153NT1G
- Part Number:
- NTA4153NT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2481782-NTA4153NT1G
- Description:
- MOSFET N-CH 20V 915MA SOT-416
- Datasheet:
- NTA4153NT1G
ON Semiconductor NTA4153NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTA4153NT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance127mOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating915mA
- Pin Count3
- Number of Elements1
- Power Dissipation-Max300mW Tj
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time3.7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs230m Ω @ 600mA, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds110pF @ 16V
- Current - Continuous Drain (Id) @ 25°C915mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.82nC @ 4.5V
- Rise Time4.4ns
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±6V
- Fall Time (Typ)4.4 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)915mA
- Threshold Voltage760mV
- Gate to Source Voltage (Vgs)6V
- Drain to Source Breakdown Voltage20V
- Nominal Vgs760 mV
- Height800μm
- Length800μm
- Width1.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTA4153NT1G Description
The NTA4153NT1G is an ESD-protected N-channel Small Signal MOSFET. It can be used in load/power switches, power supply converter circuits, battery management, and portable devices such as cell phones, PDAs, digital cameras, and pagers.
NTA4153NT1G Features
Low RDS(on) Improving System Efficiency
Low Threshold Voltage, 1.5 V Rated
ESD Protected Gate
Pb?Free Packages are Available
NV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
NTA4153NT1G Applications
Load/Power Switches
Battery Management
Power Supply Converter Circuits
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
The NTA4153NT1G is an ESD-protected N-channel Small Signal MOSFET. It can be used in load/power switches, power supply converter circuits, battery management, and portable devices such as cell phones, PDAs, digital cameras, and pagers.
NTA4153NT1G Features
Low RDS(on) Improving System Efficiency
Low Threshold Voltage, 1.5 V Rated
ESD Protected Gate
Pb?Free Packages are Available
NV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
NTA4153NT1G Applications
Load/Power Switches
Battery Management
Power Supply Converter Circuits
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
NTA4153NT1G More Descriptions
Single N-Channel with ESD Protection Small Signal MOSFET 20V, 915mA, 230mΩ
NTA4153NT1G ON Semiconductor Transistor MOSFET N-CH 20V 0.915A 3-Pin SOT-416 RoHS
MOSFET, N-Ch, VDSS 26V, RDS(ON) 127 Milliohms, ID 915mA, SC-75/SOT-416, PD 300W
Single N-Channel 20 V 950 mOhm 1.82 nC 300 mW Silicon SMT Mosfet - SC-75-3
N Channel Mosfet, 20V, 915Ma, Sc-75, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:915Μa; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:300Mw Rohs Compliant: Yes |Onsemi NTA4153NT1G.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 915 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 950 / Gate-Source Voltage V = 6 / Fall Time ns = 7.6 / Rise Time ns = 4.4 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 3.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SC-75 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 300
NTA4153NT1G ON Semiconductor Transistor MOSFET N-CH 20V 0.915A 3-Pin SOT-416 RoHS
MOSFET, N-Ch, VDSS 26V, RDS(ON) 127 Milliohms, ID 915mA, SC-75/SOT-416, PD 300W
Single N-Channel 20 V 950 mOhm 1.82 nC 300 mW Silicon SMT Mosfet - SC-75-3
N Channel Mosfet, 20V, 915Ma, Sc-75, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:915Μa; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:300Mw Rohs Compliant: Yes |Onsemi NTA4153NT1G.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 915 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 950 / Gate-Source Voltage V = 6 / Fall Time ns = 7.6 / Rise Time ns = 4.4 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 3.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SC-75 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 300
The three parts on the right have similar specifications to NTA4153NT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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NTA4153NT1GACTIVE (Last Updated: 4 days ago)5 WeeksSurface MountSC-75, SOT-416YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99127mOhmTin (Sn)FET General Purpose Power20VMOSFET (Metal Oxide)DUALGULL WING915mA31300mW TjSingleENHANCEMENT MODE300mW3.7 nsN-ChannelSWITCHING230m Ω @ 600mA, 4.5V1.1V @ 250μA110pF @ 16V915mA Ta1.82nC @ 4.5V4.4ns1.5V 4.5V±6V4.4 ns25 ns915mA760mV6V20V760 mV800μm800μm1.6mmNo SVHCNoROHS3 CompliantLead Free-----------
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--Surface MountSC-75, SOT-416YES-SILICON-55°C~150°C TJTape & Reel (TR)-e0noObsolete1 (Unlimited)3--TIN LEAD--MOSFET (Metal Oxide)DUALGULL WING-31301mW Tj-ENHANCEMENT MODE--P-ChannelSWITCHING360m Ω @ 350mA, 4.5V450mV @ 250μA156pF @ 5V760mA Tj2.1nC @ 4.5V-1.8V 4.5V±6V------------Non-RoHS Compliant-235unknownNOT SPECIFIEDR-PDSO-G3COMMERCIALSINGLE WITH BUILT-IN DIODE20V0.76A0.36Ohm20V
-
--Surface MountSC-75, SOT-416YES-SILICON-55°C~150°C TJTape & Reel (TR)-e0noObsolete1 (Unlimited)3--TIN LEAD--MOSFET (Metal Oxide)DUALGULL WING-31300mW Tj-ENHANCEMENT MODE--N-ChannelSWITCHING230m Ω @ 600mA, 4.5V1.1V @ 250μA110pF @ 16V915mA Ta1.82nC @ 4.5V-1.5V 4.5V±6V------------Non-RoHS Compliant-235unknownNOT SPECIFIEDR-PDSO-G3COMMERCIALSINGLE WITH BUILT-IN DIODE AND RESISTOR20V0.915A0.23Ohm20V
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ACTIVE (Last Updated: 4 days ago)6 WeeksSurface MountSC-75, SOT-416YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99260mOhmTin (Sn)Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-760mA31301mW TjSingleENHANCEMENT MODE301mW8 nsP-ChannelSWITCHING360m Ω @ 350mA, 4.5V450mV @ 250μA156pF @ 5V760mA Tj2.1nC @ 4.5V8.2ns1.8V 4.5V±6V8.2 ns29 ns760mA-450mV6V-20V-800μm1.65mm900μmNo SVHCNoROHS3 CompliantLead Free260-40---20V0.76A--
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