ON Semiconductor NTA4151PT1G

Name: NTA4151PT1G
Brand: ON Semiconductor
SKU: 2480797-NTA4151PT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTA4151PT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2480797-NTA4151PT1G

Description:: MOSFET P-CH 20V 0.76A SOT-416

ECAD Model:

Datasheet:: NTA4151PT1G

Specifications

ON Semiconductor NTA4151PT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTA4151PT1G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
6 Weeks
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
260mOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-760mA
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Power Dissipation-Max
301mW Tj
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
301mW
Turn On Delay Time
8 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
360m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
156pF @ 5V
Current - Continuous Drain (Id) @ 25°C
760mA Tj
Gate Charge (Qg) (Max) @ Vgs
2.1nC @ 4.5V
Rise Time
8.2ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±6V
Fall Time (Typ)
8.2 ns
Turn-Off Delay Time
29 ns
Continuous Drain Current (ID)
760mA
Threshold Voltage
-450mV
Gate to Source Voltage (Vgs)
6V
Drain Current-Max (Abs) (ID)
0.76A
Drain to Source Breakdown Voltage
-20V
Height
800μm
Length
1.65mm
Width
900μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTA4151PT1G Description
In this P-Channel 2.6V MOSFET, Fairchild's revolutionary PowerTrench process was carefully adjusted to minimize on-state resistance while maintaining low gate charge for improved switching performance. These devices were designed to provide excellent power dissipation in a small package for circumstances where larger items aren't possible.

NTA4151PT1G Features
?Low RDS(on) for increased efficiency and battery life
? Outline Package for Small Businesses (1.6 x 1.6 mm)
? Standard Gullwing Package SC75
? ESD-Resistant Gate
? These products are lead-free, halogen-free/BFR-free, and RoHS compliant.

NTA4151PT1G Applications
? Switch with a High Side Load
? Conversion from DC to DC
? Drive Circuits for Small Vehicles
? Cell phones, PDAs, digital cameras, and other battery-operated devices

NTA4151PT1G More Descriptions

Single P-Channel Gate Zener Small Signal MOSFET -20V, -760mA, 360mΩ
Trans MOSFET P-CH 20V 0.76A 3-Pin SOT-416 T/R / MOSFET P-CH 20V 0.76A SOT-416
Single P-Channel 20 V 1 Ohm 2.1 nC 313 mW Silicon SMT Mosfet - SC-75-3
MOSFET, P-Ch, VDSS -20V, RDS(ON) 0.26Ohm, ID -760mA, SC-75/SOT-416, PD 301mW
P Channel Mosfet, -20V, 760Ma Sc-75, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:760Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:301Mw Rohs Compliant: Yes |Onsemi NTA4151PT1G.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -760 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 490 / Gate-Source Voltage V = 6 / Fall Time ns = 20.4 / Rise Time ns = 8.2 / Turn-OFF Delay Time ns = 29 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SC-75 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 301

Product Comparison

The three parts on the right have similar specifications to NTA4151PT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Max Operating Temperature

Min Operating Temperature

DS Breakdown Voltage-Min

Supplier Device Package

Nominal Vgs

View Compare
NTA4151PT1G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

6 Weeks

Surface Mount

SC-75, SOT-416

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

260mOhm

Tin (Sn)

Other Transistors

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-760mA

40

3

1

301mW Tj

Single

ENHANCEMENT MODE

301mW

8 ns

P-Channel

SWITCHING

360m Ω @ 350mA, 4.5V

450mV @ 250μA

156pF @ 5V

760mA Tj

2.1nC @ 4.5V

8.2ns

20V

1.8V 4.5V

±6V

8.2 ns

29 ns

760mA

-450mV

6V

0.76A

-20V

800μm

1.65mm

900μm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
NTA4151PT1H

ON Semiconductor

-

4 Weeks

Surface Mount

SC-75, SOT-416

YES

3

-

-

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Tin (Sn)

Other Transistors

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

3

1

301mW Tj

Single

ENHANCEMENT MODE

301mW

8 ns

P-Channel

SWITCHING

360m Ω @ 350mA, 4.5V

1.2V @ 250μA

156pF @ 5V

760mA Tj

2.1nC @ 4.5V

8.2ns

20V

1.8V 4.5V

±6V

20.4 ns

29 ns

760mA

-

6V

0.76A

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

150°C

-55°C

20V

-

-

NTA4151PT1G vs NTA4151PT1H
NTA4001NT1

ON Semiconductor

-

-

Surface Mount

SC-75, SOT-416

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

300mW Tj

-

-

-

-

N-Channel

-

3Ohm @ 10mA, 4.5V

1.5V @ 100μA

20pF @ 5V

238mA Tj

-

-

20V

2.5V 4.5V

±10V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

SC-75, SOT-416

-

NTA4151PT1G vs NTA4001NT1
NTA4153NT1G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

5 Weeks

Surface Mount

SC-75, SOT-416

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

127mOhm

Tin (Sn)

FET General Purpose Power

20V

MOSFET (Metal Oxide)

DUAL

GULL WING

-

915mA

-

3

1

300mW Tj

Single

ENHANCEMENT MODE

300mW

3.7 ns

N-Channel

SWITCHING

230m Ω @ 600mA, 4.5V

1.1V @ 250μA

110pF @ 16V

915mA Ta

1.82nC @ 4.5V

4.4ns

-

1.5V 4.5V

±6V

4.4 ns

25 ns

915mA

760mV

6V

-

20V

800μm

800μm

1.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

760 mV

NTA4151PT1G vs NTA4153NT1G