Fairchild/ON Semiconductor NDT456P
- Part Number:
- NDT456P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478399-NDT456P
- Description:
- MOSFET P-CH 30V 7.5A SOT-223-4
- ECAD Model:
-
- Datasheet:
- NDT456P
Fairchild/ON Semiconductor NDT456P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDT456P.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight250.2mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance30mOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-7.3A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs30m Ω @ 7.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1440pF @ 15V
- Current - Continuous Drain (Id) @ 25°C7.5A Ta
- Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
- Rise Time65ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)70 ns
- Turn-Off Delay Time70 ns
- Continuous Drain Current (ID)7.5A
- Threshold Voltage1.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Pulsed Drain Current-Max (IDM)20A
- Dual Supply Voltage30V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs1.5 V
- Height1.8mm
- Length6.7mm
- Width6.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NDT456P Description
NDT456P is a P-Channel Enhancement Mode Field Effect Transistor. Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT456P is particularly suited for low voltage applications such as notebook computer power management, battery-powered circuits, and DC motor control.
NDT456P Features
-7.5 A, -30 V
RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V High-density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package
In the SOT-223-4 package
Power dissipation: 3W
NDT456P Applications
Power Management
Motor Drive & Control
Notebook computer power management
Battery-powered circuits
DC motor control
NDT456P is a P-Channel Enhancement Mode Field Effect Transistor. Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT456P is particularly suited for low voltage applications such as notebook computer power management, battery-powered circuits, and DC motor control.
NDT456P Features
-7.5 A, -30 V
RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V High-density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package
In the SOT-223-4 package
Power dissipation: 3W
NDT456P Applications
Power Management
Motor Drive & Control
Notebook computer power management
Battery-powered circuits
DC motor control
NDT456P More Descriptions
Transistor MOSFET P-Channel 30V 7.5A 3W (Ta) Surface Mount SOT-223-4
Trans MOSFET P-CH 30V 7.5A 4-Pin (3 Tab) SOT-223 T/R
Trans MOSFET P-CH 30V 7.5A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
MOSFET, P, LOGIC, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.5V; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:3W; Power Dissipation Pd:3W; Pulse Current Idm:20A; SMD Marking:456; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:-3V
Trans MOSFET P-CH 30V 7.5A 4-Pin (3 Tab) SOT-223 T/R
Trans MOSFET P-CH 30V 7.5A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
MOSFET, P, LOGIC, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.5V; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:3W; Power Dissipation Pd:3W; Pulse Current Idm:20A; SMD Marking:456; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:-3V
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