Fairchild/ON Semiconductor MTP3055VL

Name: MTP3055VL
Brand: Fairchild/ON Semiconductor
SKU: 2479857-MTP3055VL
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MTP3055VL

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479857-MTP3055VL

Description:: MOSFET N-CH 60V 12A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor MTP3055VL technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MTP3055VL.

Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Factory Lead Time
9 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
180mOhm
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Powers
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
12A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
48W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
48W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
180m Ω @ 6A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
570pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 5V
Rise Time
190ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±15V
Fall Time (Typ)
90 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
1V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
15V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
42A
Avalanche Energy Rating (Eas)
72 mJ
Max Junction Temperature (Tj)
175°C
Nominal Vgs
15 V
Height
20.4mm
Length
10.67mm
Width
4.83mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MTP3055VL Description
MTP3055VL belongs to the family of power MOSFETs provided by ON Semiconductor to withstand high energy in the avalanche and commutation modes. Based on its high quality and reliable performance, it is specifically designed for low voltage, high-speed switching applications in power supplies, converters, and power motor controls.

MTP3055VL Features
Advanced switching performance
High energy withstand
Available in the TO?220AB package
Avalanche energy specified
Low on-state resistance

MTP3055VL Applications
Converters
Power supplies
Power motor controls

MTP3055VL More Descriptions

Transistor MOSFET N Channel 60 Volt 12 Amp 3 Pin TO-220-3
N-Channel 60 V 0.18 Ohm 48 W Logic Level Enhancement Transistor - TO-220
Trans MOSFET N-CH 60V 12A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies).

Certification