ON Semiconductor MTP3055V

Name: MTP3055V
Brand: ON Semiconductor
SKU: 2488896-MTP3055V
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MTP3055V

Manufacturer:: ON Semiconductor

Ventron No:: 2488896-MTP3055V

Description:: MOSFET N-CH 60V 12A TO-220AB

ECAD Model:

Datasheet:: MTP3055V TO220B03 Pkg Drawing

Specifications

ON Semiconductor MTP3055V technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTP3055V.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
48W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
150mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
Non-RoHS Compliant

Description

MTP3055V Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 500pF @ 25V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

MTP3055V Features
a 60V drain to source voltage (Vdss)

MTP3055V Applications
There are a lot of Rochester Electronics, LLC
MTP3055V applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

MTP3055V More Descriptions

Trans MOSFET N-CH 60V 12A 3-Pin(3 Tab) TO-220AB Rail
FAIRCHILD MTP3055V / MOSFET N-CHAN 60V 12A TO-220
Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Package/Case:TO-220; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:12A; Mounting Type:Through Hole; Voltage Rating:60V ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:48W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-220; Power Dissipation Pd:48W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

Certification