ON Semiconductor MMBTA92LT3
- Part Number:
- MMBTA92LT3
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472178-MMBTA92LT3
- Description:
- TRANS PNP 300V 0.5A SOT-23
- Datasheet:
- MMBTA(92, 93)LT1
ON Semiconductor MMBTA92LT3 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA92LT3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMMBTA92
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power - Max300mW
- Gain Bandwidth Product600MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 30mA 10V
- Current - Collector Cutoff (Max)250nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-500mV
- Frequency - Transition50MHz
- Collector Base Voltage (VCBO)-300V
- Emitter Base Voltage (VEBO)3V
- hFE Min20
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MMBTA92LT3 Overview
This device has a DC current gain of 25 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 3V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 500mA volts is possible.
MMBTA92LT3 Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA92LT3 Applications
There are a lot of ON Semiconductor
MMBTA92LT3 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 25 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 3V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 500mA volts is possible.
MMBTA92LT3 Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA92LT3 Applications
There are a lot of ON Semiconductor
MMBTA92LT3 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA92LT3 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AF
TRANS PNP 300V 0.5A SOT-23
TRANS PNP 300V 0.5A SOT-23
The three parts on the right have similar specifications to MMBTA92LT3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationPower - MaxGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeFactory Lead TimeSurface MountJESD-30 CodeConfigurationTransistor ApplicationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)WeightSeriesFrequencyPower DissipationMax Breakdown VoltageContinuous Collector CurrentHeightLengthWidthREACH SVHCView Compare
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MMBTA92LT3Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2007e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95Other Transistors-300V300mWDUALGULL WINGNOT SPECIFIEDnot_compliant-500mANOT SPECIFIEDMMBTA923Not Qualified1Single300mW600MHzPNPPNP500mV500mA25 @ 30mA 10V250nA ICBO500mV @ 2mA, 20mA300V50MHz-500mV50MHz-300V3V20Non-RoHS CompliantContains Lead---------------------
-
-Surface MountSOT-523-SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-Other Transistors--DUALGULL WING260--10MMBT2222A3Not Qualified1-150mW-NPNNPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz-300MHz---ROHS3 Compliant-12 WeeksYESR-PDSO-G3SINGLEAMPLIFIER40V600mA0.35W285ns35ns----------
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99---25V300mWDUALGULL WING235not_compliant200mA10MMBT41243Not Qualified1Single-300MHzNPNNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz--30V5V120Non-RoHS CompliantContains Lead----SWITCHING-----7.994566mgAutomotive, AEC-Q101300MHz300mW25V200mA1mm3.05mm1.4mmNo SVHC
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-Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-------------MMBT3904----350mW--NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA---300MHz----------40V200mA-------------
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