ON Semiconductor MMBTA63LT1G
- Part Number:
- MMBTA63LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2464600-MMBTA63LT1G
- Description:
- TRANS PNP DARL 30V 0.5A SOT23
- Datasheet:
- MMBTA63LT1G
ON Semiconductor MMBTA63LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA63LT1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time12 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA63
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation225mW
- Halogen FreeHalogen Free
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- hFE Min5000
- Continuous Collector Current-500mA
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA63LT1G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts is possible.
MMBTA63LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63LT1G Applications
There are a lot of ON Semiconductor
MMBTA63LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts is possible.
MMBTA63LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63LT1G Applications
There are a lot of ON Semiconductor
MMBTA63LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA63LT1G More Descriptions
MMBT Series 30 V 500 mA PNP Silicon Darlington Transistor - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans Darlington PNP 30V 0.5A Automotive 3-Pin SOT-23 T/R
PNP Bipolar Darlington Transistor
Darlington PNP 30V 500mA HFE:10K SOT23 | ON Semiconductor MMBTA63LT1G
Trans Darlington PNP 30V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt:
BIPOLAR Transistor, PNP, -30V; TRANSISTO; BIPOLAR Transistor, PNP, -30V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:10000; No. of Pins:3
Transistor, Pnp, -30V, -0.5A, Sot-23-3; Transistor Polarity:Pnp; No. Of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:Aec-Q101; Collector Emitter Voltage Max:30V Rohs Compliant: Yes |Onsemi MMBTA63LT1G.
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans Darlington PNP 30V 0.5A Automotive 3-Pin SOT-23 T/R
PNP Bipolar Darlington Transistor
Darlington PNP 30V 500mA HFE:10K SOT23 | ON Semiconductor MMBTA63LT1G
Trans Darlington PNP 30V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt:
BIPOLAR Transistor, PNP, -30V; TRANSISTO; BIPOLAR Transistor, PNP, -30V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:10000; No. of Pins:3
Transistor, Pnp, -30V, -0.5A, Sot-23-3; Transistor Polarity:Pnp; No. Of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:Aec-Q101; Collector Emitter Voltage Max:30V Rohs Compliant: Yes |Onsemi MMBTA63LT1G.
The three parts on the right have similar specifications to MMBTA63LT1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSeriesReach Compliance CodeFrequencyQualification StatusTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTerminationTerminal FinishCurrent - Collector (Ic) (Max)Max Junction Temperature (Tj)Turn On Time-Max (ton)Power - MaxVoltage - Collector Emitter Breakdown (Max)View Compare
-
MMBTA63LT1GACTIVE (Last Updated: 2 days ago)12 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES34.535924gSILICON-55°C~150°C TJCut Tape (CT)2005e3yesActive1 (Unlimited)3EAR99Other Transistors-30V225mWDUALGULL WING260-500mA40MMBTA6331PNPSingle225mWHalogen FreePNP - Darlington30V500mA10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V30V125MHz30V10V5000-500mA1.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------------
-
---Surface MountTO-236-3, SC-59, SOT-23-3-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99-25V300mWDUALGULL WING235200mA10MMBT412431-Single300mW-NPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz-25V-30V5V120200mA1mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains LeadSurface MountAutomotive, AEC-Q101not_compliant300MHzNot QualifiedSWITCHING300MHzNPN-------
-
-15 Weeks-Surface MountSOT-523-32.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors-60V150mWDUALGULL WING260-600mA30MMBT2907A31-Single150mW-PNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V--60V-5V100-600mA900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSurface MountAutomotive, AEC-Q101-200MHz--200MHzPNPSMD/SMTMatte Tin (Sn) - annealed600mA150°C45ns--
-
---Surface MountTO-236-3, SC-59, SOT-23-3-----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----------MMBT3904------NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA----300MHz---------------------200mA--350mW40V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
31 October 2023
STM32F407VET6 Microcontroller: Symbol, Features, Working Principle
Ⅰ. What is STM32F407VET6 microcontroller?Ⅱ. Symbol, footprint and pin configuration of STM32F407VET6 microcontrollerⅢ. Technical parameters of STM32F407VET6 microcontrollerⅣ. Features of STM32F407VET6 microcontrollerⅤ. Dimension and package of STM32F407VET6 microcontrollerⅥ.... -
01 November 2023
Power MOSFET IRFP460: Manufacturer, Technical Parameters and Applications
Ⅰ. Overview of IRFP460Ⅱ. Manufacturer of IRFP460Ⅲ. Symbol, footprint and pin configuration of IRFP460Ⅳ. What are the features of IRFP460?Ⅴ. Technical parameters of IRFP460Ⅵ. What are the parallel... -
01 November 2023
Do You Know the CD4046BE CMOS Micropower Phase Locked Loop?
Ⅰ. What is a phase locked loop?Ⅱ. Overview of CD4046BEⅢ. Symbol, footprint and pin configuration of CD4046BEⅣ. What are the features of CD4046BE?Ⅴ. Technical parameters of CD4046BEⅥ. How... -
02 November 2023
MPX2010DP Pressure Sensor: Manufacturer, Pin Configuration, and Applications
Ⅰ. What is a pressure sensor?Ⅱ. Overview of MPX2010DP pressure sensorⅢ. Manufacturer of MPX2010DP pressure sensorⅣ. MPX2010DP symbol, footprint and pin configurationⅤ. Features of MPX2010DP pressure sensorⅥ. Technical...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.