Diodes Incorporated MMBTA63-7-F
- Part Number:
- MMBTA63-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464604-MMBTA63-7-F
- Description:
- TRANS PNP DARL 30V 0.5A SOT23-3
- Datasheet:
- MMBTA63-7-F
Diodes Incorporated MMBTA63-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA63-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA63
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- hFE Min5000
- Height1mm
- Length3.05mm
- Width1.4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA63-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA63-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63-7-F Applications
There are a lot of Diodes Incorporated
MMBTA63-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA63-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63-7-F Applications
There are a lot of Diodes Incorporated
MMBTA63-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA63-7-F More Descriptions
MMBTA63 Series 30 V 0.5 A PNP Surface Mount Darlington Transistor - SOT-223
MMBTA63-7-F,BIPOLAR TRANSISTOR DARLINGTON PNP SOT-23 ROHS 3K
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Trans Darlington PNP 30V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
MMBTA63-7-F,BIPOLAR TRANSISTOR DARLINGTON PNP SOT-23 ROHS 3K
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Trans Darlington PNP 30V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
The three parts on the right have similar specifications to MMBTA63-7-F.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeReach Compliance CodeFrequencyQualification StatusPower DissipationGain Bandwidth ProductPolarity/Channel TypeContinuous Collector CurrentREACH SVHCContact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyView Compare
-
MMBTA63-7-F19 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-30V300mWDUALGULL WING260-500mA40MMBTA6331PNPSingle300mWSWITCHINGPNP - Darlington30V500mA10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V30V125MHz30V10V50001mm3.05mm1.4mmNoROHS3 CompliantLead Free----------------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012005e0-Obsolete1 (Unlimited)3EAR99--25V300mWDUALGULL WING235200mA10MMBT412431-Single-SWITCHINGNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz-25V-30V5V1201mm3.05mm1.4mm-Non-RoHS CompliantContains Leadnot_compliant300MHzNot Qualified300mW300MHzNPN200mANo SVHC-------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-25V300mWDUALGULL WING260-200mA40MMBT412631-Single-SWITCHINGPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V-25V-4V1201mm3.05mm1.4mmNoROHS3 CompliantLead Free-250MHz-300mW250MHzPNP-200mANo SVHC-------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mg--55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012000--Active1 (Unlimited)----40V300mW-----MMBT3904-1NPNSingle300mW-NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V-300mV40V300MHz60V6V1001mm3.05mm1.4mmNoROHS3 CompliantLead Free-300MHz-350mW300MHz-200mANo SVHCTinSOT-23-3150°C-55°C40V200mA300MHz
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 January 2024
What is NRF24L01 and How Does It Work?
Ⅰ. Overview of NRF24L01Ⅱ. Who is the manufacturer of NRF24L01?Ⅲ. Structural block diagram of NRF24L01Ⅳ. Applications of NRF24L01Ⅴ. Communication conditions of NRF24L01Ⅵ. Working modes of NRF24L01Ⅶ. Working principle... -
29 January 2024
2SC5200 Transistor Manufacturer, Specifications, Applications and Usage
Ⅰ. Overview of 2SC5200 transistorⅡ. Naming rules of 2SC5200 transistorⅢ. Symbol, footprint and pin configuration of 2SC5200Ⅳ. Manufacturer of 2SC5200 transistorⅤ. Specifications of 2SC5200 transistorⅥ. Applications of 2SC5200... -
29 January 2024
TQP3M9028 RF Amplifier Alternatives, Market Trend, Applications and Other Details
Ⅰ. TQP3M9028 descriptionⅡ. Manufacturer of TQP3M9028Ⅲ. Specifications of TQP3M9028Ⅳ. Market trend of TQP3M9028Ⅴ. How to choose TQP3M9028?Ⅵ. Absolute maximum ratings of TQP3M9028Ⅶ. Where is TQP3M9028 used?TQP3M9028 is a... -
30 January 2024
AD7606BSTZ Converter Technical Parameters, Characteristics, Working Principle and Package
Ⅰ. Overview of AD7606BSTZⅡ. Technical parameters of AD7606BSTZⅢ. Characteristics of AD7606BSTZⅣ. Absolute maximum ratings of AD7606BSTZⅤ. How does AD7606BSTZ work?Ⅵ. Package of AD7606BSTZⅦ. What are the applications of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.