Diodes Incorporated MMBTA55-7-F
- Part Number:
- MMBTA55-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462963-MMBTA55-7-F
- Description:
- TRANS PNP 60V 0.5A SOT23-3
- Datasheet:
- MMBTA55-7-F
Diodes Incorporated MMBTA55-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA55-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-100mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA55
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-250mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)-4V
- hFE Min100
- Continuous Collector Current-500mA
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA55-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA55-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -100mA
a transition frequency of 50MHz
MMBTA55-7-F Applications
There are a lot of Diodes Incorporated
MMBTA55-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA55-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -100mA
a transition frequency of 50MHz
MMBTA55-7-F Applications
There are a lot of Diodes Incorporated
MMBTA55-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA55-7-F More Descriptions
Transistor General Purpose BJT PNP 60 Volt 0.5A Automotive 3-Pin SOT-23
MMBTA55 Series PNP 60 V 300 mW Small Signal Transistor Surface Mount - SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
PNP Small Signal Transistor SOT-23 | Diodes Inc MMBTA55-7-F
Trans GP BJT PNP 60V 0.5A 350mW 3-Pin SOT-23 T/R
MMBTA55 Series PNP 60 V 300 mW Small Signal Transistor Surface Mount - SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
PNP Small Signal Transistor SOT-23 | Diodes Inc MMBTA55-7-F
Trans GP BJT PNP 60V 0.5A 350mW 3-Pin SOT-23 T/R
The three parts on the right have similar specifications to MMBTA55-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyFrequency - TransitionTerminationMax Junction Temperature (Tj)Turn On Time-Max (ton)View Compare
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MMBTA55-7-F19 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther Transistors-60V300mWDUALGULL WING260-100mA50MHz40MMBTA5531Single300mWSWITCHING50MHzPNPPNP60V500mA100 @ 100mA 1V100nA ICBO250mV @ 10mA, 100mA60V50MHz-250mV60V60V-4V100-500mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free--------------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mg--55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012000--Active1 (Unlimited)-----40V300mW----300MHz-MMBT3904-1Single350mW-300MHz-NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V-300mV40V60V6V100200mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeTinSOT-23-3150°C-55°CNPN300mW40V200mA300MHz300MHz---
-
15 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-Other Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW-200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100-600mA900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free-------600mA--SMD/SMT150°C45ns
-
--Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)----Obsolete1 (Unlimited)-------------MMBT3904-------NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA--------------------350mW40V200mA-300MHz---
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