ON Semiconductor MMBTA42LT3G
- Part Number:
- MMBTA42LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068722-MMBTA42LT3G
- Description:
- TRANS NPN 300V 0.5A SOT-23
- Datasheet:
- MMBTA42LT3G
ON Semiconductor MMBTA42LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA42LT3G.
- Lifecycle StatusACTIVE (Last Updated: 10 hours ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA42
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min25
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA42LT3G Overview
DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 500mA volts.
MMBTA42LT3G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MMBTA42LT3G Applications
There are a lot of ON Semiconductor
MMBTA42LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 500mA volts.
MMBTA42LT3G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MMBTA42LT3G Applications
There are a lot of ON Semiconductor
MMBTA42LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA42LT3G More Descriptions
500 mA, 300 V High Voltage NPN Bipolar Junction Transistor
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 300V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
MMBT Series 300 V 50 mA SMT NPN Silicon Transistor - SOT-23
Bipolar Transistors - BJT 500mA 300V NPN
300V 225mW 500mA 25@1mA10V 50MHz 500mV@20mA2mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Bipolar Transistor, Npn, 300V, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:300V; Continuous Collector Current:50Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MMBTA42LT3G
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 300V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
MMBT Series 300 V 50 mA SMT NPN Silicon Transistor - SOT-23
Bipolar Transistors - BJT 500mA 300V NPN
300V 225mW 500mA 25@1mA10V 50MHz 500mV@20mA2mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Bipolar Transistor, Npn, 300V, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:300V; Continuous Collector Current:50Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MMBTA42LT3G
The three parts on the right have similar specifications to MMBTA42LT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeMountSupplier Device PackageWeightSeriesMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyFrequency - TransitionContinuous Collector CurrentHeightLengthWidthREACH SVHCTerminationTerminal FinishMax Junction Temperature (Tj)Turn On Time-Max (ton)View Compare
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MMBTA42LT3GACTIVE (Last Updated: 10 hours ago)8 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors300V225mWDUALGULL WING260500mA50MHz40MMBTA4231Single300mW50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V300V6V25NoROHS3 CompliantLead Free----------------------
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-15 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3-3--55°C~150°C TJTape & Reel (TR)2000--Active1 (Unlimited)---40V300mW----300MHz-MMBT3904-1Single350mW300MHz-NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V-300mV40V60V6V100NoROHS3 CompliantLead FreeSurface MountSOT-23-37.994566mgAutomotive, AEC-Q101150°C-55°CNPN300mW40V200mA300MHz300MHz200mA1mm3.05mm1.4mmNo SVHC----
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-15 Weeks-Surface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100NoROHS3 CompliantLead FreeSurface Mount-2.012816mgAutomotive, AEC-Q101-----600mA---600mA900μm1.6mm800μmNo SVHCSMD/SMTMatte Tin (Sn) - annealed150°C45ns
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---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MMBT3904------NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA-----------------350mW40V200mA-300MHz---------
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