ON Semiconductor MMBTA42LT1G
- Part Number:
- MMBTA42LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463129-MMBTA42LT1G
- Description:
- TRANS NPN 300V 0.5A SOT23
- ECAD Model:
-
- Datasheet:
- MMBTA42LT1G
ON Semiconductor MMBTA42LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA42LT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time16 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA42
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min25
- Height1.016mm
- Length3.0226mm
- Width1.397mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA42LT1G Description
MMBTA42LT1G belongs to the family of high-voltage transistors manufactured by ON Semiconductor for automotive and other applications where unique site and control changes are required. Due to its specific characteristics, it can be used in a wide range of applications.
MMBTA42LT1G Features
Pb-free
NPN silicon
RoHS compliant
Available in the SOT-23 (TO-236) package
MMBTA42LT1G Applications
Applications where unique site and control change are required
MMBTA42LT1G belongs to the family of high-voltage transistors manufactured by ON Semiconductor for automotive and other applications where unique site and control changes are required. Due to its specific characteristics, it can be used in a wide range of applications.
MMBTA42LT1G Features
Pb-free
NPN silicon
RoHS compliant
Available in the SOT-23 (TO-236) package
MMBTA42LT1G Applications
Applications where unique site and control change are required
MMBTA42LT1G More Descriptions
Transistor, Bipolar,Si,NPN,High Voltage,VCEO 300VDC,IC 50mA,PD 225mW,SOT-23
TRANS NPN 300V 0.5A SOT23 / Trans GP BJT NPN 300V 0.5A 300mW 3-Pin SOT-23 T/R
300V 225mW 40@30mA,10V 500mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
500 mA, 300 V High Voltage NPN Bipolar Junction Transistor
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor NPN MMBTA42/MMBTA42LT1G ON SEMI RoHS milliampere=100 V=300 SOt23
Transistor NPN 0,5A/300V 0,3W SOT23 MMBTA42LT1G
MMBTA42L: Small Signal, High Voltage NPN Transistor
TRANSISTOR, NPN, 300V, 500MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 225mW; DC Collector Current: 500mA; DC Current Gain hFE: 40hFE;
Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:300V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:50Mhzrohs Compliant: Yes |Onsemi MMBTA42LT1G.
TRANS NPN 300V 0.5A SOT23 / Trans GP BJT NPN 300V 0.5A 300mW 3-Pin SOT-23 T/R
300V 225mW 40@30mA,10V 500mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
500 mA, 300 V High Voltage NPN Bipolar Junction Transistor
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor NPN MMBTA42/MMBTA42LT1G ON SEMI RoHS milliampere=100 V=300 SOt23
Transistor NPN 0,5A/300V 0,3W SOT23 MMBTA42LT1G
MMBTA42L: Small Signal, High Voltage NPN Transistor
TRANSISTOR, NPN, 300V, 500MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 225mW; DC Collector Current: 500mA; DC Current Gain hFE: 40hFE;
Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:300V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:50Mhzrohs Compliant: Yes |Onsemi MMBTA42LT1G.
The three parts on the right have similar specifications to MMBTA42LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSeriesTerminationTerminal FinishCurrent - Collector (Ic) (Max)Max Junction Temperature (Tj)Continuous Collector CurrentTurn On Time-Max (ton)Power - MaxVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBTA42LT1GACTIVE (Last Updated: 4 days ago)16 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES34.535924gSILICON-55°C~150°C TJTape & Reel (TR)1998e3yesActive1 (Unlimited)3EAR99Other Transistors300V225mWDUALGULL WING260500mA50MHz40MMBTA4231Single300mW50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V300V6V251.016mm3.0226mm1.397mmNo SVHCNoROHS3 CompliantLead Free----------------- -
-15 Weeks-Surface MountSOT-523-32.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSurface MountAutomotive, AEC-Q101SMD/SMTMatte Tin (Sn) - annealed600mA150°C-600mA45ns--------
-
---Surface MountTO-236-3, SC-59, SOT-23-3-----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MMBT3904------NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA------------------200mA---350mW40V300MHz-----
-
-16 Weeks-Surface MountSC-89, SOT-490-330mg-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)----250mW----300MHz-MMBT2222-1Single250mW300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V75V6V75780μm1.7mm980μm--ROHS3 CompliantLead FreeSurface Mount---600mA---250mW40V300MHzSOT-523F150°C-55°CNPN100MHz
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