Diodes Incorporated MMBTA42-7
- Part Number:
- MMBTA42-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2465766-MMBTA42-7
- Description:
- TRANS NPN 300V 0.5A SOT23-3
- Datasheet:
- MMBTA42
Diodes Incorporated MMBTA42-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA42-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn85Pb15)
- Voltage - Rated DC300V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating200mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMMBTA42
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Max Frequency50MHz
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min40
- Continuous Collector Current500mA
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MMBTA42-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 30mA 10V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 300V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA42-7 Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7 Applications
There are a lot of Diodes Incorporated
MMBTA42-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 30mA 10V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 300V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA42-7 Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7 Applications
There are a lot of Diodes Incorporated
MMBTA42-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA42-7 More Descriptions
Transistor General Purpose BJT NPN 300 Volt 0.5 Amp 3-Pin SOT-23 Tape And Reel
TRANS NPN 300V 0.5A SOT23-3
TRANS NPN 300V 0.5A SOT23-3
The three parts on the right have similar specifications to MMBTA42-7.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeFactory Lead TimeSubcategoryJESD-30 CodeConfigurationPower - MaxFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)FrequencyPower DissipationPbfree CodeTerminationCurrent - Collector (Ic) (Max)Max Junction Temperature (Tj)Radiation HardeningView Compare
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MMBTA42-7Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e0Discontinued1 (Unlimited)3EAR99Tin/Lead (Sn85Pb15)300V300mWDUALGULL WING235not_compliant200mA10MMBTA423Not Qualified1SingleSWITCHING50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz50MHz500mV300V300V6V40500mA1mm3.05mm1.4mmNo SVHCNon-RoHS CompliantContains Lead----------------
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-2011e3Active1 (Unlimited)3-Tin (Sn)-225mWDUALGULL WINGNOT SPECIFIED--NOT SPECIFIED---1-SWITCHING-NPNNPN1V600mA100 @ 150mA 10mV10nA1V @ 50mA, 500mA40V-300MHz----------ROHS3 Compliant-10 WeeksOther TransistorsR-PDSO-G3SINGLE300mW300MHz285ns35ns-------
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012005e0Obsolete1 (Unlimited)3EAR99-25V300mWDUALGULL WING235not_compliant200mA10MMBT41243Not Qualified1SingleSWITCHING300MHzNPNNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V-300MHz-25V30V5V120200mA1mm3.05mm1.4mmNo SVHCNon-RoHS CompliantContains Lead--------300MHz300mW-----
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Surface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3Active1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-60V150mWDUALGULL WING260--600mA30MMBT2907A3-1Single-200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V-200MHz-1.6V60V-60V-5V100-600mA900μm1.6mm800μmNo SVHCROHS3 CompliantLead Free15 WeeksOther Transistors-----45ns200MHz150mWyesSMD/SMT600mA150°CNo
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