Diodes Incorporated MMBTA28-7-F
- Part Number:
- MMBTA28-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464251-MMBTA28-7-F
- Description:
- TRANS NPN DARL 80V 0.5A SOT23-3
- ECAD Model:
-
- Datasheet:
- MMBTA28-7-F
Diodes Incorporated MMBTA28-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA28-7-F.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA28
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product125MHz
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)12V
- hFE Min10000
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA28-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 125MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MMBTA28-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 125MHz
MMBTA28-7-F Applications
There are a lot of Diodes Incorporated
MMBTA28-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 125MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MMBTA28-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 125MHz
MMBTA28-7-F Applications
There are a lot of Diodes Incorporated
MMBTA28-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA28-7-F More Descriptions
MMBTA28 Series NPN 80 V 300 mW Darlington Transistor Surface Mount - SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Trans Darlington NPN 80V 0.5A 300mW 3-Pin SOT-23 T/R / TRANS NPN DARL 80V 0.5A SOT23-3
10000@5V,100mA 80V NPN 500mA 300mW SOT-23 Darlington Transistors ROHS
Trans Darlington NPN 80V 0.5A SOT23 | Diodes Inc MMBTA28-7-F
Transistor, DARLINGTON, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:125MHz; Power
TRANSISTOR, DARLINGTON, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 1.5V; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 125MHz; Hfe Min: 10000; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Darlington
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Trans Darlington NPN 80V 0.5A 300mW 3-Pin SOT-23 T/R / TRANS NPN DARL 80V 0.5A SOT23-3
10000@5V,100mA 80V NPN 500mA 300mW SOT-23 Darlington Transistors ROHS
Trans Darlington NPN 80V 0.5A SOT23 | Diodes Inc MMBTA28-7-F
Transistor, DARLINGTON, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:125MHz; Power
TRANSISTOR, DARLINGTON, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 1.5V; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 125MHz; Hfe Min: 10000; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Darlington
The three parts on the right have similar specifications to MMBTA28-7-F.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)Surface MountQualification StatusVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)TerminationFrequencyContinuous Collector CurrentView Compare
-
MMBTA28-7-F15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Other Transistors80V300mWDUALGULL WING260500mA40MMBTA2831NPNSingle300mWSWITCHING125MHzNPN - Darlington80V500mA10000 @ 100mA 5V500nA1.5V @ 100μA, 100mA80V125MHz1.5V80V80V12V10000150°C1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------------- -
10 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-2011e3-Active1 (Unlimited)3-Other Transistors-225mWDUALGULL WINGNOT SPECIFIED-NOT SPECIFIED--1---SWITCHING-NPN1V600mA100 @ 150mA 10mV10nA1V @ 50mA, 500mA40V300MHz-----------ROHS3 Compliant-Tin (Sn)R-PDSO-G3SINGLE300mWNPN300MHz285ns35ns--------
-
12 Weeks--Surface MountSOT-523--SILICON-55°C~150°C TJTape & Reel (TR)-2005e3yesActive1 (Unlimited)3EAR99Other Transistors--DUALGULL WING260-10MMBT2222A31---AMPLIFIER-NPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz-----------ROHS3 Compliant-Matte Tin (Sn)R-PDSO-G3SINGLE150mWNPN300MHz285ns35nsYESNot Qualified40V600mA0.35W---
-
15 Weeks-Surface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)3EAR99Other Transistors-60V150mWDUALGULL WING260-600mA30MMBT2907A31-Single150mW-200MHzPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100150°C900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn) - annealed---PNP--45ns---600mA-SMD/SMT200MHz-600mA
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 December 2023
DS1990A: An Authentication and Data Storage Solution that Balances Efficiency and Security
Ⅰ. What is iButton?Ⅱ. Overview of DS1990A iButtonⅢ. Functional block diagram of DS1990AⅣ. Where is DS1990A iButton used?Ⅴ. How does DS1990A communicate with the host device?Ⅵ. Specifications of... -
19 December 2023
PT2399: The Next-Gen Digital Delay and Echo Audio Processor IC
Ⅰ. What is PT2399?Ⅱ. Structure and working principle of PT2399Ⅲ. Total harmonic distortion and noise of PT2399Ⅳ. Which one is better, PT2399 or PT2399?Ⅴ. Who is the manufacturer... -
20 December 2023
What is the STM32F103C8T6 Microcontroller and How Does It Work?
Ⅰ. STM32F103C8T6 overviewⅡ. What are the features of STM32F103C8T6?Ⅲ. Programming of STM32F103C8T6Ⅳ. STM32F103C8T6 priceⅤ. What is the difference between STM32F103C8T6 and CH32F103C8T6?Ⅵ. Decoupling circuit of STM32F103C8T6Ⅶ. Several working... -
20 December 2023
1N4007 Diode Characteristics and Application Guide
Ⅰ. Introduction of 1N4007Ⅱ. Naming rules of 1N4007 diodeⅢ. Technical parameters of 1N4007 diodeⅣ. Can we use 1N4004 instead of 1N4007?Ⅴ. 1N4007 diode principle of operationⅥ. Electrical characteristic...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.