ON Semiconductor MMBTA14LT1G
- Part Number:
- MMBTA14LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463190-MMBTA14LT1G
- Description:
- TRANS NPN DARL 30V 0.3A SOT23
- Datasheet:
- MMBTA14LT1G
ON Semiconductor MMBTA14LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA14LT1G.
- Lifecycle StatusACTIVE (Last Updated: 20 hours ago)
- Factory Lead Time11 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating300mA
- Base Part NumberMMBTA14
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- hFE Min10000
- Continuous Collector Current300mA
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA14LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of 300mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 300mA volts.
MMBTA14LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
MMBTA14LT1G Applications
There are a lot of ON Semiconductor
MMBTA14LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of 300mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 300mA volts.
MMBTA14LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
MMBTA14LT1G Applications
There are a lot of ON Semiconductor
MMBTA14LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA14LT1G More Descriptions
MMBTA14LT1G On Semiconductor BJT Transistor Darlington NPN 30V 0.3A 300mW 3-Pin SOT-23 T/R RoHS
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MMBT Series 30 V 300 mA NPN Silicon Darlington Amplifier Transistor - SOT-23
NPN Bipolar Darlington Transistor
Darlington NPN 30V 300mA HFE:20K SOT23 | ON Semiconductor MMBTA14LT1G
BIPOLAR TRANSISTOR, NPN, 30V SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:225mW; DC Collector Current:300mA; RF Transistor Case:SOT-23; No. of Pins:3Pins; DC Current Gain hFE:20000hFE RoHS Compliant: Yes
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MMBT Series 30 V 300 mA NPN Silicon Darlington Amplifier Transistor - SOT-23
NPN Bipolar Darlington Transistor
Darlington NPN 30V 300mA HFE:20K SOT23 | ON Semiconductor MMBTA14LT1G
BIPOLAR TRANSISTOR, NPN, 30V SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:225mW; DC Collector Current:300mA; RF Transistor Case:SOT-23; No. of Pins:3Pins; DC Current Gain hFE:20000hFE RoHS Compliant: Yes
The three parts on the right have similar specifications to MMBTA14LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingBase Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)MountSeriesFrequencyGain Bandwidth ProductView Compare
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MMBTA14LT1GACTIVE (Last Updated: 20 hours ago)11 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES31.437803gSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Other Transistors30V225mWDUALGULL WING300mAMMBTA1431NPNSingle300mWAMPLIFIERHalogen FreeNPN - Darlington30V300mA20000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V30V125MHz30V10V10000300mA940μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free------------------
-
-12 Weeks-Surface MountSOT-523YES--SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors--DUALGULL WING-MMBT2222A31---AMPLIFIER-NPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz--300MHz---------ROHS3 Compliant-Matte Tin (Sn)26010R-PDSO-G3Not QualifiedSINGLE150mWNPN40V600mA0.35W285ns35ns----
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-15 WeeksTinSurface MountSOT-523-32.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors40V150mWDUALGULL WING200mAMMBT390431-Single150mW--NPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V-60V6V100200mA750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free-26040----NPN---250ns70nsSurface MountAutomotive, AEC-Q101300MHz300MHz
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-15 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors-25V300mWDUALGULL WING-200mAMMBT412631-Single300mWSWITCHING-PNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V-25V-4V120-200mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)26040----PNP-----Surface MountAutomotive, AEC-Q101250MHz250MHz
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