MMBTA14LT1G

ON Semiconductor MMBTA14LT1G

Part Number:
MMBTA14LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2463190-MMBTA14LT1G
Description:
TRANS NPN DARL 30V 0.3A SOT23
ECAD Model:
Datasheet:
MMBTA14LT1G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor MMBTA14LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA14LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 20 hours ago)
  • Factory Lead Time
    11 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    1.437803g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    30V
  • Max Power Dissipation
    225mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    300mA
  • Base Part Number
    MMBTA14
  • Pin Count
    3
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Transistor Application
    AMPLIFIER
  • Halogen Free
    Halogen Free
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    300mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20000 @ 100mA 5V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 100μA, 100mA
  • Collector Emitter Breakdown Voltage
    30V
  • Transition Frequency
    125MHz
  • Collector Emitter Saturation Voltage
    1.5V
  • Max Breakdown Voltage
    30V
  • Frequency - Transition
    125MHz
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    10V
  • hFE Min
    10000
  • Continuous Collector Current
    300mA
  • Height
    940μm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBTA14LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of 300mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 300mA volts.

MMBTA14LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz


MMBTA14LT1G Applications
There are a lot of ON Semiconductor
MMBTA14LT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBTA14LT1G More Descriptions
MMBTA14LT1G On Semiconductor BJT Transistor Darlington NPN 30V 0.3A 300mW 3-Pin SOT-23 T/R RoHS
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MMBT Series 30 V 300 mA NPN Silicon Darlington Amplifier Transistor - SOT-23
NPN Bipolar Darlington Transistor
Darlington NPN 30V 300mA HFE:20K SOT23 | ON Semiconductor MMBTA14LT1G
BIPOLAR TRANSISTOR, NPN, 30V SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:225mW; DC Collector Current:300mA; RF Transistor Case:SOT-23; No. of Pins:3Pins; DC Current Gain hFE:20000hFE RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to MMBTA14LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Halogen Free
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Mount
    Series
    Frequency
    Gain Bandwidth Product
    View Compare
  • MMBTA14LT1G
    MMBTA14LT1G
    ACTIVE (Last Updated: 20 hours ago)
    11 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    30V
    225mW
    DUAL
    GULL WING
    300mA
    MMBTA14
    3
    1
    NPN
    Single
    300mW
    AMPLIFIER
    Halogen Free
    NPN - Darlington
    30V
    300mA
    20000 @ 100mA 5V
    100nA ICBO
    1.5V @ 100μA, 100mA
    30V
    125MHz
    1.5V
    30V
    125MHz
    30V
    10V
    10000
    300mA
    940μm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2222AT-TP
    -
    12 Weeks
    -
    Surface Mount
    SOT-523
    YES
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -
    -
    DUAL
    GULL WING
    -
    MMBT2222A
    3
    1
    -
    -
    -
    AMPLIFIER
    -
    NPN
    -
    -
    75 @ 10mA 10V
    100nA
    1V @ 50mA, 500mA
    -
    300MHz
    -
    -
    300MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    260
    10
    R-PDSO-G3
    Not Qualified
    SINGLE
    150mW
    NPN
    40V
    600mA
    0.35W
    285ns
    35ns
    -
    -
    -
    -
  • MMBT3904T-7-F
    -
    15 Weeks
    Tin
    Surface Mount
    SOT-523
    -
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    40V
    150mW
    DUAL
    GULL WING
    200mA
    MMBT3904
    3
    1
    -
    Single
    150mW
    -
    -
    NPN
    40V
    200mA
    100 @ 10mA 1V
    -
    300mV @ 5mA, 50mA
    40V
    300MHz
    300mV
    40V
    -
    60V
    6V
    100
    200mA
    750μm
    1.6mm
    800μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    260
    40
    -
    -
    -
    -
    NPN
    -
    -
    -
    250ns
    70ns
    Surface Mount
    Automotive, AEC-Q101
    300MHz
    300MHz
  • MMBT4126-7-F
    -
    15 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -25V
    300mW
    DUAL
    GULL WING
    -200mA
    MMBT4126
    3
    1
    -
    Single
    300mW
    SWITCHING
    -
    PNP
    25V
    200mA
    120 @ 2mA 1V
    50nA ICBO
    400mV @ 5mA, 50mA
    25V
    250MHz
    -400mV
    25V
    -
    25V
    -4V
    120
    -200mA
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    260
    40
    -
    -
    -
    -
    PNP
    -
    -
    -
    -
    -
    Surface Mount
    Automotive, AEC-Q101
    250MHz
    250MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.