Diodes Incorporated MMBTA14-7-F
- Part Number:
- MMBTA14-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464612-MMBTA14-7-F
- Description:
- TRANS NPN DARL 30V 0.3A SOT23-3
- Datasheet:
- MMBTA14-7-F
Diodes Incorporated MMBTA14-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA14-7-F.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA14
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- hFE Min10000
- Height1mm
- Length3.05mm
- Width1.4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA14-7-F Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.In this part, there is a transition frequency of 125MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 300mA volts.
MMBTA14-7-F Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 125MHz
MMBTA14-7-F Applications
There are a lot of Diodes Incorporated
MMBTA14-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.In this part, there is a transition frequency of 125MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 300mA volts.
MMBTA14-7-F Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 125MHz
MMBTA14-7-F Applications
There are a lot of Diodes Incorporated
MMBTA14-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA14-7-F More Descriptions
MMBTA14 Series NPN 30 V 300 mW Darlington Transistor Surface Mount - SOT-23-3
TRANS NPN DARL 30V 0.3A SOT23-3 / Trans Darlington NPN 30V 0.3A 300mW 3-Pin SOT-23 T/R
BIPOLAR TRANSISTOR DARLINGTON NPN SOT-23 ROHS 3K
IC,MMBTA14-7-F,BIPOLAR TRANSIS TOR DARLINGTON NPN SOT-23 ROH
Trans, Npn, 30V, 0.3A, 150Deg C, 0.3W Rohs Compliant: Yes |Diodes Inc. MMBTA14-7-F
TRANS NPN DARL 30V 0.3A SOT23-3 / Trans Darlington NPN 30V 0.3A 300mW 3-Pin SOT-23 T/R
BIPOLAR TRANSISTOR DARLINGTON NPN SOT-23 ROHS 3K
IC,MMBTA14-7-F,BIPOLAR TRANSIS TOR DARLINGTON NPN SOT-23 ROH
Trans, Npn, 30V, 0.3A, 150Deg C, 0.3W Rohs Compliant: Yes |Diodes Inc. MMBTA14-7-F
The three parts on the right have similar specifications to MMBTA14-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountJESD-30 CodeQualification StatusConfigurationPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)FrequencyPower DissipationGain Bandwidth ProductContinuous Collector CurrentREACH SVHCSupplier Device PackageMax Operating TemperatureMin Operating TemperatureMax FrequencyView Compare
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MMBTA14-7-F13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther Transistors30V300mWDUALGULL WING260100mA40MMBTA1431NPNSingle300mWSWITCHINGNPN - Darlington30V300mA20000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V30V125MHz30V10V100001mm3.05mm1.4mmNoROHS3 CompliantLead Free--------------------
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12 Weeks-Surface MountSOT-523--SILICON-55°C~150°C TJTape & Reel (TR)-2005e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-Other Transistors--DUALGULL WING260-10MMBT2222A31--150mWAMPLIFIERNPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz--300MHz-------ROHS3 Compliant-YESR-PDSO-G3Not QualifiedSINGLENPN40V600mA0.35W285ns35ns---------
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-Other Transistors-25V300mWDUALGULL WING260-200mA40MMBT412631-Single-SWITCHINGPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V-25V-4V1201mm3.05mm1.4mmNoROHS3 CompliantLead Free----PNP-----250MHz300mW250MHz-200mANo SVHC----
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16 WeeksSurface MountSurface MountSC-89, SOT-490330mg-150°C TJTape & Reel (TR)-2004--Last Time Buy1 (Unlimited)------250mW-----MMBT2222-1NPNSingle250mW-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V300MHz75V6V75780μm1.7mm980μm-ROHS3 CompliantLead Free-----40V600mA---300MHz250mW300MHz--SOT-523F150°C-55°C100MHz
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