ON Semiconductor MMBTA13LT3G

Name: MMBTA13LT3G
Brand: ON Semiconductor
SKU: 2464863-MMBTA13LT3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBTA13LT3G

Manufacturer:: ON Semiconductor

Ventron No:: 2464863-MMBTA13LT3G

Description:: TRANS NPN DARL 30V 0.3A SOT23

ECAD Model:

Datasheet:: MMBTA13LT3G

Specifications

ON Semiconductor MMBTA13LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA13LT3G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
11 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MMBTA13
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
225mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
1.5V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
Height
1.01mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMBTA13LT3G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 10V to achieve high efficiency.In this part, there is a transition frequency of 125MHz.The maximum collector current is 300mA volts.

MMBTA13LT3G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz

MMBTA13LT3G Applications
There are a lot of ON Semiconductor
MMBTA13LT3G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MMBTA13LT3G More Descriptions

Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
NPN Bipolar Darlington Transistor
Trans Darlington NPN 30V 0.3A 300mW 3-Pin SOT-23 T/R
Transistors, Darlington, SS DL XSTR NPN 30V | ON Semiconductor MMBTA13LT3G
Bipolar Transistor, Npn, 30V; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:30V; Msl:Msl 1 - Unlimited Rohs Compliant: Yes |Onsemi MMBTA13LT3G

Product Comparison

The three parts on the right have similar specifications to MMBTA13LT3G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Subcategory

JESD-30 Code

Qualification Status

Configuration

Power - Max

Polarity/Channel Type

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Power Dissipation-Max (Abs)

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Contact Plating

Mount

Weight

Series

Voltage - Rated DC

Current Rating

Frequency

Gain Bandwidth Product

Max Breakdown Voltage

hFE Min

Continuous Collector Current

REACH SVHC

Termination

Max Junction Temperature (Tj)

View Compare
MMBTA13LT3G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

11 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

225mW

DUAL

GULL WING

260

40

MMBTA13

3

1

NPN

Single

225mW

AMPLIFIER

Halogen Free

NPN - Darlington

30V

300mA

10000 @ 100mA 5V

100nA ICBO

1.5V @ 100μA, 100mA

30V

125MHz

1.5V

125MHz

30V

10V

1.01mm

3.04mm

1.4mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMBT2222AT-TP

Micro Commercial Co

-

12 Weeks

Surface Mount

SOT-523

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

DUAL

GULL WING

260

10

MMBT2222A

3

1

-

-

-

AMPLIFIER

-

NPN

-

-

75 @ 10mA 10V

100nA

1V @ 50mA, 500mA

-

300MHz

-

300MHz

-

-

-

-

-

-

ROHS3 Compliant

-

Other Transistors

R-PDSO-G3

Not Qualified

SINGLE

150mW

NPN

40V

600mA

0.35W

285ns

35ns

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MMBTA13LT3G vs MMBT2222AT-TP
MMBT3904T-7-F

Diodes Incorporated

-

15 Weeks

Surface Mount

SOT-523

-

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

-

150mW

DUAL

GULL WING

260

40

MMBT3904

3

1

-

Single

150mW

-

-

NPN

40V

200mA

100 @ 10mA 1V

-

300mV @ 5mA, 50mA

40V

300MHz

300mV

-

60V

6V

750μm

1.6mm

800μm

No

ROHS3 Compliant

Lead Free

Other Transistors

-

-

-

-

NPN

-

-

-

250ns

70ns

Tin

Surface Mount

2.012816mg

Automotive, AEC-Q101

40V

200mA

300MHz

300MHz

40V

100

200mA

No SVHC

-

-

MMBTA13LT3G vs MMBT3904T-7-F
MMBT2907AT-7-F

Diodes Incorporated

-

15 Weeks

Surface Mount

SOT-523

-

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

150mW

DUAL

GULL WING

260

30

MMBT2907A

3

1

-

Single

150mW

-

-

PNP

-60V

-600mA

100 @ 150mA 10V

10nA ICBO

1.6V @ 50mA, 500mA

-60V

200MHz

-1.6V

-

-60V

-5V

900μm

1.6mm

800μm

No

ROHS3 Compliant

Lead Free

Other Transistors

-

-

-

-

PNP

-

600mA

-

-

45ns

-

Surface Mount

2.012816mg

Automotive, AEC-Q101

-60V

-600mA

200MHz

200MHz

60V

100

-600mA

No SVHC

SMD/SMT

150°C

MMBTA13LT3G vs MMBT2907AT-7-F

Certification

Related parts for MMBTA13LT3G

MMBT3906-7

Diodes Incorporated

TRANS PNP 40V 0.2A SOT23-3
MMBT2222A-G

Comchip Technology

TRANS NPN 40V 0.6A SOT-23
MMBT2222AT-TP

Micro Commercial Co

TRANS NPN 40V 0.6A SOT-523
MMBT3904T-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SOT523
MMBT4124-7

Diodes Incorporated

TRANS NPN 25V 0.2A SMD SOT23-3
MMBT4126-7-F

Diodes Incorporated

TRANS PNP 25V 0.2A SMD SOT23-3
MMBT3904-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SMD SOT23-3
MMBT2907AT-7-F

Diodes Incorporated

TRANS PNP 60V 0.6A SOT523
MMBT3904_D87Z

Fairchild/ON Semiconductor

TRANS NPN 40V 0.2A SOT-23
MMBT2222AT

Fairchild/ON Semiconductor

TRANS NPN 40V 0.6A SOT523F

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MMBTA13~~(13)~~
MMBTA1~~(26)~~
MMBTA~~(144)~~
MMBT~~(187)~~
MMB~~(235)~~

Part Number	Manufacturers	Description	Stock	Price
MMBTA13LT3G DISTI #MMBTA13LT3G	ON Semiconductor	TRANS NPN DARL 30V 0.3A SOT23 RoHS: Compliant	8026	1 $0.21 10 $0.198 100 $0.1083 500 $0.06722 1000 $0.04632
MMBTA13LT3G DISTI #MMBTA13LT3G	ON Semiconductor	TRANS NPN DARL 30V 0.3A SOT23 RoHS: Compliant	8026	1 $0.21 10 $0.198 100 $0.1083 500 $0.06722 1000 $0.04632
MMBTA13LT3G DISTI #MMBTA13LT3G	ON Semiconductor	TRANS NPN DARL 30V 0.3A SOT23 RoHS: Compliant	0	10000 $0.0305 30000 $0.0276 50000 $0.0247 100000 $0.02325 250000 $0.02084
MMBTA13LT3G DISTI #MMBTA13LT3G	ON Semiconductor	Trans Darlington NPN 30V 0.3A 3-Pin SOT-23 T/R (Al RoHS: Compliant	0	10000 $0.02944 20000 $0.02222 40000 $0.02023 60000 $0.01812 100000 $0.0171
MMBTA13LT3G DISTI #MMBTA13LT3G	ON Semiconductor	Trans Darlington NPN 30V 0.3A 3-Pin SOT-23 T/R - T RoHS: Compliant	0	30000 $0.01569 50000 $0.01558 80000 $0.01538 150000 $0.01519 300000 $0.01481
MMBTA13LT3G DISTI #MMBTA13LT3G	ON Semiconductor	Transistors, Darlington, SS DL XSTR NPN 30V RoHS: Compliant	0	200 $0.048
MMBTA13LT1G DISTI #MMBTA13LT1G	ON Semiconductor	Darlington Transistors 300mA 30V NPN RoHS: Compliant	8634	1 $0.21 10 $0.185 100 $0.065 1000 $0.043 3000 $0.033 9000 $0.029 24000 $0.026
MMBTA13LT3G DISTI #MMBTA13LT3G	ON Semiconductor	Darlington Transistors SS DL XSTR NPN 30V RoHS: Compliant	0	1 $0.2 10 $0.178 100 $0.063 1000 $0.042 2500 $0.032 10000 $0.028 20000 $0.025 50000 $0.023 100000 $0.019
MMBTA13LT3G DISTI #MMBTA13LT3G	ON Semiconductor	RoHS: Not Compliant	60000	1 $0.03 25 $0.03 100 $0.03 500 $0.03 1000 $0.03
MMBTA13LT3G DISTI #MMBTA13LT3G	ON Semiconductor	DARLINGTON NPN 30V 300MA HFE:10K SOT23, RL	900	200 $0.033 500 $0.031 1000 $0.026 2000 $0.024

ON Semiconductor MMBTA13LT3G

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