ON Semiconductor MMBTA13LT1G
- Part Number:
- MMBTA13LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463176-MMBTA13LT1G
- Description:
- TRANS NPN DARL 30V 0.3A SOT23
- Datasheet:
- MMBTA13LT1G
ON Semiconductor MMBTA13LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA13LT1G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time11 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating300mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA13
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation225mW
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- hFE Min5000
- Continuous Collector Current300mA
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA13LT1G Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 300mA to achieve high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 300mA current rating.As a result, the part has a transition frequency of 125MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 300mA volts.
MMBTA13LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
MMBTA13LT1G Applications
There are a lot of ON Semiconductor
MMBTA13LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 300mA to achieve high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 300mA current rating.As a result, the part has a transition frequency of 125MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 300mA volts.
MMBTA13LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
MMBTA13LT1G Applications
There are a lot of ON Semiconductor
MMBTA13LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA13LT1G More Descriptions
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MMBTA13L Series 30 V 300 mA NPN Darlington Amplifier Transistor - SOT-23-3
Trans Darlington NPN 30V 0.3A 300mW Automotive 3-Pin SOT-23 T/R
10000@5V,100mA 30V NPN 300mA 225mW SOT-23(TO-236) Darlington Transistors ROHS
NPN Bipolar Darlington Transistor
Darlington NPN 30V 300mA HFE:10K SOT23 | ON Semiconductor MMBTA13LT1G
Trans Darlington NPN 30V 0.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt:
DARLINGTON NPN, 300 mA, 30 V, FULL REEL; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:AEC-Q101; Collector Emitter Voltage Max:30V RoHS Compliant: Yes
TRANS, BIPOL, NPN, 30V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 225mW; DC Collector Current: 300mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
MMBTA13L Series 30 V 300 mA NPN Darlington Amplifier Transistor - SOT-23-3
Trans Darlington NPN 30V 0.3A 300mW Automotive 3-Pin SOT-23 T/R
10000@5V,100mA 30V NPN 300mA 225mW SOT-23(TO-236) Darlington Transistors ROHS
NPN Bipolar Darlington Transistor
Darlington NPN 30V 300mA HFE:10K SOT23 | ON Semiconductor MMBTA13LT1G
Trans Darlington NPN 30V 0.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt:
DARLINGTON NPN, 300 mA, 30 V, FULL REEL; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:AEC-Q101; Collector Emitter Voltage Max:30V RoHS Compliant: Yes
TRANS, BIPOL, NPN, 30V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 225mW; DC Collector Current: 300mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MMBTA13LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishJESD-30 CodeQualification StatusConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)MountSeriesFrequencyGain Bandwidth ProductSupplier Device PackageMax Operating TemperatureMin Operating TemperatureMax FrequencyView Compare
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MMBTA13LT1GACTIVE (Last Updated: 6 days ago)11 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES31.437803gSILICON-55°C~150°C TJTape & Reel (TR)1997e3yesActive1 (Unlimited)3EAR99Other Transistors30V225mWDUALGULL WING260300mA40MMBTA1331NPNSingle225mWAMPLIFIERHalogen FreeNPN - Darlington30V300mA10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V30V125MHz30V10V5000300mA940μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free--------------------
-
-12 Weeks-Surface MountSOT-523YES--SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors--DUALGULL WING260-10MMBT2222A31---AMPLIFIER-NPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz--300MHz---------ROHS3 Compliant-Matte Tin (Sn)R-PDSO-G3Not QualifiedSINGLE150mWNPN40V600mA0.35W285ns35ns--------
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-15 WeeksTinSurface MountSOT-523-32.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors40V150mWDUALGULL WING260200mA40MMBT390431-Single150mW--NPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V-60V6V100200mA750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free-----NPN---250ns70nsSurface MountAutomotive, AEC-Q101300MHz300MHz----
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-15 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3-37.994566mg--55°C~150°C TJTape & Reel (TR)2000--Active1 (Unlimited)---40V300mW-----MMBT3904-1NPNSingle350mW--NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V-300mV40V300MHz60V6V100200mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free----300mW-40V200mA---Surface MountAutomotive, AEC-Q101300MHz300MHzSOT-23-3150°C-55°C300MHz
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