MMBTA13LT1G

ON Semiconductor MMBTA13LT1G

Part Number:
MMBTA13LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2463176-MMBTA13LT1G
Description:
TRANS NPN DARL 30V 0.3A SOT23
ECAD Model:
Datasheet:
MMBTA13LT1G

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Specifications
ON Semiconductor MMBTA13LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA13LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    11 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    1.437803g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    30V
  • Max Power Dissipation
    225mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    300mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBTA13
  • Pin Count
    3
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    225mW
  • Transistor Application
    AMPLIFIER
  • Halogen Free
    Halogen Free
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    300mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10000 @ 100mA 5V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 100μA, 100mA
  • Collector Emitter Breakdown Voltage
    30V
  • Transition Frequency
    125MHz
  • Collector Emitter Saturation Voltage
    1.5V
  • Max Breakdown Voltage
    30V
  • Frequency - Transition
    125MHz
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    10V
  • hFE Min
    5000
  • Continuous Collector Current
    300mA
  • Height
    940μm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBTA13LT1G Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 300mA to achieve high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 300mA current rating.As a result, the part has a transition frequency of 125MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 300mA volts.

MMBTA13LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz


MMBTA13LT1G Applications
There are a lot of ON Semiconductor
MMBTA13LT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBTA13LT1G More Descriptions
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MMBTA13L Series 30 V 300 mA NPN Darlington Amplifier Transistor - SOT-23-3
Trans Darlington NPN 30V 0.3A 300mW Automotive 3-Pin SOT-23 T/R
10000@5V,100mA 30V NPN 300mA 225mW SOT-23(TO-236) Darlington Transistors ROHS
NPN Bipolar Darlington Transistor
Darlington NPN 30V 300mA HFE:10K SOT23 | ON Semiconductor MMBTA13LT1G
Trans Darlington NPN 30V 0.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt:
DARLINGTON NPN, 300 mA, 30 V, FULL REEL; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:AEC-Q101; Collector Emitter Voltage Max:30V RoHS Compliant: Yes
TRANS, BIPOL, NPN, 30V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 225mW; DC Collector Current: 300mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to MMBTA13LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Halogen Free
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Mount
    Series
    Frequency
    Gain Bandwidth Product
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Max Frequency
    View Compare
  • MMBTA13LT1G
    MMBTA13LT1G
    ACTIVE (Last Updated: 6 days ago)
    11 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    30V
    225mW
    DUAL
    GULL WING
    260
    300mA
    40
    MMBTA13
    3
    1
    NPN
    Single
    225mW
    AMPLIFIER
    Halogen Free
    NPN - Darlington
    30V
    300mA
    10000 @ 100mA 5V
    100nA ICBO
    1.5V @ 100μA, 100mA
    30V
    125MHz
    1.5V
    30V
    125MHz
    30V
    10V
    5000
    300mA
    940μm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2222AT-TP
    -
    12 Weeks
    -
    Surface Mount
    SOT-523
    YES
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -
    -
    DUAL
    GULL WING
    260
    -
    10
    MMBT2222A
    3
    1
    -
    -
    -
    AMPLIFIER
    -
    NPN
    -
    -
    75 @ 10mA 10V
    100nA
    1V @ 50mA, 500mA
    -
    300MHz
    -
    -
    300MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    R-PDSO-G3
    Not Qualified
    SINGLE
    150mW
    NPN
    40V
    600mA
    0.35W
    285ns
    35ns
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT3904T-7-F
    -
    15 Weeks
    Tin
    Surface Mount
    SOT-523
    -
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    40V
    150mW
    DUAL
    GULL WING
    260
    200mA
    40
    MMBT3904
    3
    1
    -
    Single
    150mW
    -
    -
    NPN
    40V
    200mA
    100 @ 10mA 1V
    -
    300mV @ 5mA, 50mA
    40V
    300MHz
    300mV
    40V
    -
    60V
    6V
    100
    200mA
    750μm
    1.6mm
    800μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    NPN
    -
    -
    -
    250ns
    70ns
    Surface Mount
    Automotive, AEC-Q101
    300MHz
    300MHz
    -
    -
    -
    -
  • MMBT3904-7-F
    -
    15 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    7.994566mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    40V
    300mW
    -
    -
    -
    -
    -
    MMBT3904
    -
    1
    NPN
    Single
    350mW
    -
    -
    NPN
    40V
    200mA
    100 @ 10mA 1V
    50nA ICBO
    300mV @ 5mA, 50mA
    40V
    -
    300mV
    40V
    300MHz
    60V
    6V
    100
    200mA
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    300mW
    -
    40V
    200mA
    -
    -
    -
    Surface Mount
    Automotive, AEC-Q101
    300MHz
    300MHz
    SOT-23-3
    150°C
    -55°C
    300MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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