Diodes Incorporated MMBTA13-7
- Part Number:
- MMBTA13-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3069985-MMBTA13-7
- Description:
- TRANS NPN DARL 30V 0.3A SOT23-3
- Datasheet:
- MMBTA13-7
Diodes Incorporated MMBTA13-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA13-7.
- Factory Lead Time7 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMMBTA13
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- Continuous Collector Current300mA
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MMBTA13-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 300mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 125MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 300mA volts can be achieved.
MMBTA13-7 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 125MHz
MMBTA13-7 Applications
There are a lot of Diodes Incorporated
MMBTA13-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 300mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 125MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 300mA volts can be achieved.
MMBTA13-7 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 125MHz
MMBTA13-7 Applications
There are a lot of Diodes Incorporated
MMBTA13-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA13-7 More Descriptions
TRANS NPN DARL 30V 0.3A SOT23-3
The three parts on the right have similar specifications to MMBTA13-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentRoHS StatusLead FreeWeightPbfree CodeTerminal FinishFrequencyGain Bandwidth ProductPolarity/Channel TypehFE MinHeightLengthWidthREACH SVHCRadiation HardeningContact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyTerminationMax Junction Temperature (Tj)Turn On Time-Max (ton)View Compare
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MMBTA13-77 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJCut Tape (CT)Automotive, AEC-Q1012008e0Discontinued1 (Unlimited)3EAR99Other Transistors30V300mWDUALGULL WING235not_compliant100mA10MMBTA133Not Qualified1NPNSingle300mWSWITCHINGNPN - Darlington30V300mA10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V30V125MHz30V10V300mANon-RoHS CompliantContains Lead------------------------
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3Active1 (Unlimited)3EAR99Other Transistors-25V300mWDUALGULL WING260--200mA40MMBT41263-1-Single300mWSWITCHINGPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V-25V-4V-200mAROHS3 CompliantLead Free7.994566mgyesMatte Tin (Sn)250MHz250MHzPNP1201mm3.05mm1.4mmNo SVHCNo-----------
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33--55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012000-Active1 (Unlimited)---40V300mW------MMBT3904--1NPNSingle350mW-NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V-300mV40V300MHz60V6V200mAROHS3 CompliantLead Free7.994566mg--300MHz300MHz-1001mm3.05mm1.4mmNo SVHCNoTinSOT-23-3150°C-55°C300mW40V200mA300MHz---
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15 WeeksSurface MountSurface MountSOT-5233SILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3Active1 (Unlimited)3EAR99Other Transistors-60V150mWDUALGULL WING260--600mA30MMBT2907A3-1-Single150mW-PNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V--60V-5V-600mAROHS3 CompliantLead Free2.012816mgyesMatte Tin (Sn) - annealed200MHz200MHzPNP100900μm1.6mm800μmNo SVHCNo------600mA-SMD/SMT150°C45ns
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