Diodes Incorporated MMBTA13-7-F
- Part Number:
- MMBTA13-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462955-MMBTA13-7-F
- Description:
- TRANS NPN DARL 30V 0.3A SOT23-3
- Datasheet:
- MMBTA13-7-F
Diodes Incorporated MMBTA13-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA13-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA13
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- hFE Min5000
- Height1mm
- Length3.05mm
- Width1.4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA13-7-F Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.An emitter's base voltage can be kept at 10V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 125MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 300mA volts.
MMBTA13-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 125MHz
MMBTA13-7-F Applications
There are a lot of Diodes Incorporated
MMBTA13-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.An emitter's base voltage can be kept at 10V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 125MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 300mA volts.
MMBTA13-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 125MHz
MMBTA13-7-F Applications
There are a lot of Diodes Incorporated
MMBTA13-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA13-7-F More Descriptions
Transistor Darlington NPN 30 Volt 0.3 Amp 3-Pin SOT-23 Tape And Reel
MMBTA13 Series 30 V 300 mA NPN Surface Mount Darlington Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
MMBTA13 Series 30 V 300 mA NPN Surface Mount Darlington Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
The three parts on the right have similar specifications to MMBTA13-7-F.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeFrequencyPower DissipationGain Bandwidth ProductPolarity/Channel TypeContinuous Collector CurrentREACH SVHCContact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyView Compare
-
MMBTA13-7-F19 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther Transistors30V300mWDUALGULL WING260100mA40MMBTA1331NPNSingle300mWSWITCHINGNPN - Darlington30V300mA10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V30V125MHz30V10V50001mm3.05mm1.4mmNoROHS3 CompliantLead Free--------------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-Other Transistors-25V300mWDUALGULL WING260-200mA40MMBT412631-Single-SWITCHINGPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V-25V-4V1201mm3.05mm1.4mmNoROHS3 CompliantLead Free250MHz300mW250MHzPNP-200mANo SVHC-------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mg--55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012000--Active1 (Unlimited)-----40V300mW-----MMBT3904-1NPNSingle300mW-NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V-300mV40V300MHz60V6V1001mm3.05mm1.4mmNoROHS3 CompliantLead Free300MHz350mW300MHz-200mANo SVHCTinSOT-23-3150°C-55°C40V200mA300MHz
-
--Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)----Obsolete1 (Unlimited)------------MMBT3904----350mW-NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA----300MHz-------------------40V200mA-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 October 2023
A Comprehensive Introduction to MJE2955T Transistor
Ⅰ. Overview of MJE2955T transistorⅡ. Symbol, footprint and pin configuration of MJE2955T transistorⅢ. Technical parameters of MJE2955T transistorⅣ. Features of MJE2955T transistorⅤ. Working principle of MJE2955T transistorⅥ. Absolute... -
23 October 2023
UA741CP Operational Amplifier: Symbol, Equivalent, Dimensions and Applications
Ⅰ. What is UA741CP operational amplifier?Ⅱ. Symbol and footprint of UA741CP operational amplifierⅢ. Technical parameters of UA741CP operational amplifierⅣ. What are the features of UA741CP operational amplifier?Ⅴ. Dimensions... -
23 October 2023
A Basic Overview of SN74LS00N NAND Gates
Ⅰ. What are logic gates and NAND gates?Ⅱ. Overview of SN74LS00N NAND gatesⅢ. Symbol and footprint of SN74LS00N NAND gatesⅣ. Technical parameters of SN74LS00N NAND gatesⅤ. Features of... -
24 October 2023
2N5486 Transistor: Equivalent, Technical Parameters and Applications
Ⅰ. Overview of 2N5486 transistorⅡ. Symbol, footprint and pin configuration of 2N5486 transistorⅢ. Technical parameters of 2N5486 transistorⅣ. What are the features of 2N5486 transistor?Ⅴ. How to drive or use 2N5486...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.