Diodes Incorporated MMBTA06-7
- Part Number:
- MMBTA06-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3069892-MMBTA06-7
- Description:
- TRANS NPN 80V 0.5A SOT23-3
- Datasheet:
- MMBTA06-7
Diodes Incorporated MMBTA06-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA06-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Voltage - Rated DC80V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating500mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMMBTA06
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- Continuous Collector Current500mA
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MMBTA06-7 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 500mA is necessary for high efficiency.The base voltage of the emitter can be kept at 4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 500mA volts.
MMBTA06-7 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7 Applications
There are a lot of Diodes Incorporated
MMBTA06-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 500mA is necessary for high efficiency.The base voltage of the emitter can be kept at 4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 500mA volts.
MMBTA06-7 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7 Applications
There are a lot of Diodes Incorporated
MMBTA06-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA06-7 More Descriptions
TRANS NPN 80V 0.5A SOT23-3
The three parts on the right have similar specifications to MMBTA06-7.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeFactory Lead TimeTerminal FinishSubcategoryJESD-30 CodeConfigurationPower - MaxFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)Surface MountPbfree CodeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)View Compare
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MMBTA06-7Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)Automotive, AEC-Q1012009e0Discontinued1 (Unlimited)3EAR9980V300mWDUALGULL WING235not_compliant500mA100MHz10MMBTA063Not Qualified1Single300mWISOLATEDSWITCHING100MHzNPNNPN80V500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV80V80V4V100500mA1mm3.05mm1.4mmNo SVHCNon-RoHS CompliantContains Lead---------------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-2011e3Active1 (Unlimited)3--225mWDUALGULL WINGNOT SPECIFIED---NOT SPECIFIED---1---SWITCHING-NPNNPN1V600mA100 @ 150mA 10mV10nA1V @ 50mA, 500mA40V300MHz----------ROHS3 Compliant-10 WeeksTin (Sn)Other TransistorsR-PDSO-G3SINGLE300mW300MHz285ns35ns-----
-
-Surface MountSOT-523--SILICON-55°C~150°C TJTape & Reel (TR)-2005e3Active1 (Unlimited)3EAR99--DUALGULL WING260---10MMBT2222A3Not Qualified1---AMPLIFIER-NPNNPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz----------ROHS3 Compliant-12 WeeksMatte Tin (Sn)Other TransistorsR-PDSO-G3SINGLE150mW300MHz285ns35nsYESyes40V600mA0.35W
-
-Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MMBT3904---------NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA-------------------350mW300MHz----40V200mA-
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