ON Semiconductor MMBTA05LT3G
- Part Number:
- MMBTA05LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463771-MMBTA05LT3G
- Description:
- TRANS NPN 60V 500MA SOT23
- Datasheet:
- MMBTA05LT3G
ON Semiconductor MMBTA05LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA05LT3G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA05
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- Height1.11mm
- Length3.04mm
- Width2.64mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA05LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA05LT3G Applications
There are a lot of ON Semiconductor
MMBTA05LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA05LT3G Applications
There are a lot of ON Semiconductor
MMBTA05LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA05LT3G More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
ON Semi MMBTA05LT3G NPN Bipolar Transistor, 0.5 A, 60 V, 3-Pin SOT-23 | ON Semiconductor MMBTA05LT3G
Trans GP BJT NPN 60V 0.5A 300mW 3-Pin SOT-23 T/R
60V 225mW 500mA 100@10mA1V 100MHz NPN 250mV@100mA10mA -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Bipolar Transistor, Npn, 60V; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:500Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:100Mhz Rohs Compliant: Yes |Onsemi MMBTA05LT3G
ON Semi MMBTA05LT3G NPN Bipolar Transistor, 0.5 A, 60 V, 3-Pin SOT-23 | ON Semiconductor MMBTA05LT3G
Trans GP BJT NPN 60V 0.5A 300mW 3-Pin SOT-23 T/R
60V 225mW 500mA 100@10mA1V 100MHz NPN 250mV@100mA10mA -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Bipolar Transistor, Npn, 60V; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:500Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:100Mhz Rohs Compliant: Yes |Onsemi MMBTA05LT3G
The three parts on the right have similar specifications to MMBTA05LT3G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeContact PlatingMountWeightSeriesContinuous Collector CurrentTurn Off Time-Max (toff)Turn On Time-Max (ton)REACH SVHCReach Compliance CodeQualification StatusTerminationCurrent - Collector (Ic) (Max)Max Junction Temperature (Tj)View Compare
-
MMBTA05LT3GACTIVE (Last Updated: 1 day ago)4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors60V225mWDUALGULL WING260500mA100MHz40MMBTA0531Single300mWAMPLIFIER100MHzNPNNPN60V500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V100MHz250mV60V60V4V1001.11mm3.04mm2.64mmNoROHS3 CompliantLead Free--------------
-
-15 WeeksSurface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99-Other Transistors40V150mWDUALGULL WING260200mA300MHz40MMBT390431Single150mW-300MHzNPNNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100750μm1.6mm800μmNoROHS3 CompliantLead FreeTinSurface Mount2.012816mgAutomotive, AEC-Q101200mA250ns70nsNo SVHC-----
-
--Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99--25V300mWDUALGULL WING235200mA300MHz10MMBT412431Single300mWSWITCHING300MHzNPNNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz-25V30V5V1201mm3.05mm1.4mm-Non-RoHS CompliantContains Lead-Surface Mount7.994566mgAutomotive, AEC-Q101200mA--No SVHCnot_compliantNot Qualified---
-
-15 WeeksSurface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW-200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100900μm1.6mm800μmNoROHS3 CompliantLead Free-Surface Mount2.012816mgAutomotive, AEC-Q101-600mA-45nsNo SVHC--SMD/SMT600mA150°C
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 October 2023
Get to Know the MOC3063 Triac Driver
Ⅰ. What is an optocoupler?Ⅱ. Overview of MOC3063 optocouplerⅢ. Symbol, footprint and pin configuration of MOC3063Ⅳ. Technical parameters of MOC3063Ⅴ. What are the features of MOC3063?Ⅵ. Working principle... -
19 October 2023
TIP122 Darlington Transistor: Symbol, Features, Applications and More
Ⅰ. What is Darlington tube?Ⅱ. Overview of TIP122 transistorⅢ. Symbol and footprint of TIP122 transistorⅣ. Technical parameters of TIP122 transistorⅤ. What are the features of TIP122 transistor?Ⅵ. Pin... -
19 October 2023
LM3900N Quadruple Operational Amplifier: Equivalent, Working Principle and LM3900N vs LM3900DR
Ⅰ. Overview of LM3900NⅡ. Symbol and footprint of LM3900NⅢ. Technical parameters of LM3900NⅣ. What are the features of LM3900N?Ⅴ. Pin configuration of LM3900NⅥ. Circuit and working principle of... -
20 October 2023
TNY268PN Switcher: Symbol, Features, Manufacturer and Applications
Ⅰ. Overview of TNY268PN switcherⅡ. TNY268PN symbol, footprint and pin configurationⅢ. Technical parameters of TNY268PN switcherⅣ. What are the features of TNY268PN switcher?Ⅴ. Manufacturer of TNY268PN switcherⅥ. What...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.