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MMBTA05LT3

ON Semiconductor MMBTA05LT3

Part Number:
MMBTA05LT3
Manufacturer:
ON Semiconductor
Ventron No:
2472254-MMBTA05LT3
Description:
TRANS NPN 60V 0.5A SOT-23
ECAD Model:
Datasheet:
MMBTA05L,06L

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Specifications
ON Semiconductor MMBTA05LT3 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA05LT3.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    225mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA
  • JEDEC-95 Code
    TO-236AB
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    500mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • RoHS Status
    Non-RoHS Compliant
Description
MMBTA05LT3 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Parts of this part have transition frequencies of 100MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

MMBTA05LT3 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 100MHz


MMBTA05LT3 Applications
There are a lot of Rochester Electronics, LLC
MMBTA05LT3 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBTA05LT3 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Non-Compliant Surface Mount 100 NPN Contains Lead SOT-23-3 500 mA 60 V
SMALL SIGNAL BIPOLAR TRANSISTOR
Product Comparison
The three parts on the right have similar specifications to MMBTA05LT3.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Factory Lead Time
    Contact Plating
    Mount
    Number of Pins
    Weight
    Series
    Published
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Base Part Number
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Max Frequency
    View Compare
  • MMBTA05LT3
    MMBTA05LT3
    ON Semiconductor
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    TIN LEAD
    DUAL
    GULL WING
    240
    unknown
    30
    3
    R-PDSO-G3
    COMMERCIAL
    1
    SINGLE
    225mW
    AMPLIFIER
    NPN
    NPN
    100 @ 100mA 1V
    100nA
    TO-236AB
    250mV @ 10mA, 100mA
    60V
    500mA
    100MHz
    100MHz
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT3904T-7-F
    MMBT3904T-7-F
    Diodes Incorporated
    Surface Mount
    SOT-523
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    DUAL
    GULL WING
    260
    -
    40
    3
    -
    -
    1
    -
    -
    -
    NPN
    NPN
    100 @ 10mA 1V
    -
    -
    300mV @ 5mA, 50mA
    -
    -
    300MHz
    -
    ROHS3 Compliant
    15 Weeks
    Tin
    Surface Mount
    3
    2.012816mg
    Automotive, AEC-Q101
    2007
    EAR99
    Other Transistors
    40V
    150mW
    200mA
    300MHz
    MMBT3904
    Single
    150mW
    300MHz
    40V
    200mA
    40V
    300mV
    40V
    60V
    6V
    100
    200mA
    250ns
    70ns
    750μm
    1.6mm
    800μm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    MMBTA05LT3 vs MMBT3904T-7-F
  • MMBT4126-7-F
    MMBT4126-7-F
    Diodes Incorporated
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    Matte Tin (Sn)
    DUAL
    GULL WING
    260
    -
    40
    3
    -
    -
    1
    -
    -
    SWITCHING
    PNP
    PNP
    120 @ 2mA 1V
    50nA ICBO
    -
    400mV @ 5mA, 50mA
    -
    -
    250MHz
    -
    ROHS3 Compliant
    15 Weeks
    -
    Surface Mount
    3
    7.994566mg
    Automotive, AEC-Q101
    2008
    EAR99
    Other Transistors
    -25V
    300mW
    -200mA
    250MHz
    MMBT4126
    Single
    300mW
    250MHz
    25V
    200mA
    25V
    -400mV
    25V
    25V
    -4V
    120
    -200mA
    -
    -
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    MMBTA05LT3 vs MMBT4126-7-F
  • MMBT3904-7-F
    MMBT3904-7-F
    Diodes Incorporated
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    300mW
    -
    -
    NPN
    100 @ 10mA 1V
    50nA ICBO
    -
    300mV @ 5mA, 50mA
    40V
    200mA
    -
    300MHz
    ROHS3 Compliant
    15 Weeks
    Tin
    Surface Mount
    3
    7.994566mg
    Automotive, AEC-Q101
    2000
    -
    -
    40V
    300mW
    -
    300MHz
    MMBT3904
    Single
    350mW
    300MHz
    40V
    200mA
    40V
    300mV
    40V
    60V
    6V
    100
    200mA
    -
    -
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    Lead Free
    SOT-23-3
    150°C
    -55°C
    NPN
    300MHz
    MMBTA05LT3 vs MMBT3904-7-F
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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