ON Semiconductor MMBT8099LT1G
- Part Number:
- MMBT8099LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463022-MMBT8099LT1G
- Description:
- TRANS NPN 80V 0.5A SOT23
- Datasheet:
- MMBT8099LT1G
ON Semiconductor MMBT8099LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT8099LT1G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT8099
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation225mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT8099LT1G Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
MMBT8099LT1G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MMBT8099LT1G Applications
There are a lot of ON Semiconductor
MMBT8099LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
MMBT8099LT1G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MMBT8099LT1G Applications
There are a lot of ON Semiconductor
MMBT8099LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT8099LT1G More Descriptions
ON Semi MMBT8099LT1G NPN Bipolar Transistor; 0.5 A; 80 V; 3-Pin SOT-23
Trans GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Trans GP BJT NPN 80V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
MMBT Series 80 V 500 mA Surface Mount NPN Silicon Amplifier Transistor SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
80V 225mW 500mA 100@1mA5V 150MHz 400mV@100mA5mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 80V, 500MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 225mW; DC Collector Current: 500mA; DC Current Gain hFE: 75hFE; T
Trans GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Trans GP BJT NPN 80V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
MMBT Series 80 V 500 mA Surface Mount NPN Silicon Amplifier Transistor SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
80V 225mW 500mA 100@1mA5V 150MHz 400mV@100mA5mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 80V, 500MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 225mW; DC Collector Current: 500mA; DC Current Gain hFE: 75hFE; T
The three parts on the right have similar specifications to MMBT8099LT1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)MountSeriesTerminationMax Junction Temperature (Tj)Continuous Collector CurrentSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBT8099LT1GACTIVE (Last Updated: 5 days ago)2 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES34.535924gSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Other Transistors80V225mWDUALGULL WING260500mA150MHz40MMBT809931Single225mWAMPLIFIER150MHzNPNNPN80V500mA100 @ 1mA 5V100nA400mV @ 5mA, 100mA80V150MHz400mV80V80V6V1001.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------------------
-
-12 Weeks-Surface MountSOT-523YES--SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors--DUALGULL WING260--10MMBT2222A31--AMPLIFIER-NPNNPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz----------ROHS3 Compliant-Matte Tin (Sn)R-PDSO-G3Not QualifiedSINGLE150mW40V600mA300MHz0.35W285ns35ns----------
-
-15 Weeks-Surface MountSOT-523-32.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW-200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn) - annealed-----600mA---45nsSurface MountAutomotive, AEC-Q101SMD/SMT150°C-600mA-----
-
-16 Weeks-Surface MountSC-89, SOT-490-330mg-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)----250mW----300MHz-MMBT2222-1Single250mW-300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V75V6V75780μm1.7mm980μm--ROHS3 CompliantLead Free----250mW40V600mA300MHz---Surface Mount----SOT-523F150°C-55°CNPN100MHz
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