MMBT8099LT1G

ON Semiconductor MMBT8099LT1G

Part Number:
MMBT8099LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2463022-MMBT8099LT1G
Description:
TRANS NPN 80V 0.5A SOT23
ECAD Model:
Datasheet:
MMBT8099LT1G

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Specifications
ON Semiconductor MMBT8099LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT8099LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    2 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    80V
  • Max Power Dissipation
    225mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    500mA
  • Frequency
    150MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBT8099
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    225mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    150MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1mA 5V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    150MHz
  • Collector Emitter Saturation Voltage
    400mV
  • Max Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    100
  • Height
    1.01mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBT8099LT1G Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.

MMBT8099LT1G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz


MMBT8099LT1G Applications
There are a lot of ON Semiconductor
MMBT8099LT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT8099LT1G More Descriptions
ON Semi MMBT8099LT1G NPN Bipolar Transistor; 0.5 A; 80 V; 3-Pin SOT-23
Trans GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Trans GP BJT NPN 80V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
MMBT Series 80 V 500 mA Surface Mount NPN Silicon Amplifier Transistor SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
80V 225mW 500mA 100@1mA5V 150MHz 400mV@100mA5mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 80V, 500MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 225mW; DC Collector Current: 500mA; DC Current Gain hFE: 75hFE; T
Product Comparison
The three parts on the right have similar specifications to MMBT8099LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Power Dissipation-Max (Abs)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Mount
    Series
    Termination
    Max Junction Temperature (Tj)
    Continuous Collector Current
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Max Frequency
    View Compare
  • MMBT8099LT1G
    MMBT8099LT1G
    ACTIVE (Last Updated: 5 days ago)
    2 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    80V
    225mW
    DUAL
    GULL WING
    260
    500mA
    150MHz
    40
    MMBT8099
    3
    1
    Single
    225mW
    AMPLIFIER
    150MHz
    NPN
    NPN
    80V
    500mA
    100 @ 1mA 5V
    100nA
    400mV @ 5mA, 100mA
    80V
    150MHz
    400mV
    80V
    80V
    6V
    100
    1.01mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2222AT-TP
    -
    12 Weeks
    -
    Surface Mount
    SOT-523
    YES
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -
    -
    DUAL
    GULL WING
    260
    -
    -
    10
    MMBT2222A
    3
    1
    -
    -
    AMPLIFIER
    -
    NPN
    NPN
    -
    -
    75 @ 10mA 10V
    100nA
    1V @ 50mA, 500mA
    -
    300MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    R-PDSO-G3
    Not Qualified
    SINGLE
    150mW
    40V
    600mA
    300MHz
    0.35W
    285ns
    35ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2907AT-7-F
    -
    15 Weeks
    -
    Surface Mount
    SOT-523
    -
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -60V
    150mW
    DUAL
    GULL WING
    260
    -600mA
    200MHz
    30
    MMBT2907A
    3
    1
    Single
    150mW
    -
    200MHz
    PNP
    PNP
    -60V
    -600mA
    100 @ 150mA 10V
    10nA ICBO
    1.6V @ 50mA, 500mA
    -60V
    200MHz
    -1.6V
    60V
    -60V
    -5V
    100
    900μm
    1.6mm
    800μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn) - annealed
    -
    -
    -
    -
    -
    600mA
    -
    -
    -
    45ns
    Surface Mount
    Automotive, AEC-Q101
    SMD/SMT
    150°C
    -600mA
    -
    -
    -
    -
    -
  • MMBT2222AT
    -
    16 Weeks
    -
    Surface Mount
    SC-89, SOT-490
    -
    3
    30mg
    -
    150°C TJ
    Tape & Reel (TR)
    2004
    -
    -
    Last Time Buy
    1 (Unlimited)
    -
    -
    -
    -
    250mW
    -
    -
    -
    -
    300MHz
    -
    MMBT2222
    -
    1
    Single
    250mW
    -
    300MHz
    -
    NPN
    40V
    600mA
    100 @ 150mA 1V
    -
    1V @ 50mA, 500mA
    40V
    -
    1V
    40V
    75V
    6V
    75
    780μm
    1.7mm
    980μm
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    250mW
    40V
    600mA
    300MHz
    -
    -
    -
    Surface Mount
    -
    -
    -
    -
    SOT-523F
    150°C
    -55°C
    NPN
    100MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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