ON Semiconductor MMBT8099LT1
- Part Number:
- MMBT8099LT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585401-MMBT8099LT1
- Description:
- TRANS NPN 80V 0.5A SOT23
- ECAD Model:
-
- Datasheet:
- MMBT8099LT1
ON Semiconductor MMBT8099LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT8099LT1.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max225mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA 5V
- Current - Collector Cutoff (Max)100nA
- JEDEC-95 CodeTO-236AB
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency150MHz
- Frequency - Transition150MHz
- RoHS StatusNon-RoHS Compliant
MMBT8099LT1 Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 150MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
MMBT8099LT1 Features
the DC current gain for this device is 100 @ 1mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 150MHz
MMBT8099LT1 Applications
There are a lot of Rochester Electronics, LLC
MMBT8099LT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 150MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
MMBT8099LT1 Features
the DC current gain for this device is 100 @ 1mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 150MHz
MMBT8099LT1 Applications
There are a lot of Rochester Electronics, LLC
MMBT8099LT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT8099LT1 More Descriptions
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 100 @ 1mA 5V 100nA 225mW 150MHz
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R
The three parts on the right have similar specifications to MMBT8099LT1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusFactory Lead TimeContact PlatingMountNumber of PinsSupplier Device PackageWeightSeriesPublishedMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationFrequencyBase Part NumberPolarityElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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MMBT8099LT1Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)e0noObsolete1 (Unlimited)3TIN LEADDUALGULL WING240303R-PDSO-G3COMMERCIAL1SINGLE225mWAMPLIFIERNPNNPN100 @ 1mA 5V100nATO-236AB400mV @ 5mA, 100mA80V500mA150MHz150MHzNon-RoHS Compliant----------------------------------- -
Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)--Active1 (Unlimited)---------1-300mW--NPN100 @ 10mA 1V50nA ICBO-300mV @ 5mA, 50mA40V200mA-300MHzROHS3 Compliant15 WeeksTinSurface Mount3SOT-23-37.994566mgAutomotive, AEC-Q1012000150°C-55°C40V300mW300MHzMMBT3904NPNSingle350mW300MHz40V200mA40V300MHz300mV40V60V6V100200mA1mm3.05mm1.4mmNo SVHCNoLead Free
-
Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-----------350mW--NPN100 @ 10mA 1V--300mV @ 5mA, 50mA40V200mA-300MHz--------------MMBT3904--------------------
-
Surface MountSC-89, SOT-490--150°C TJTape & Reel (TR)--Last Time Buy1 (Unlimited)---------1-250mW--NPN100 @ 150mA 1V--1V @ 50mA, 500mA40V600mA-300MHzROHS3 Compliant16 Weeks-Surface Mount3SOT-523F30mg-2004150°C-55°C-250mW300MHzMMBT2222NPNSingle250mW300MHz40V600mA40V100MHz1V40V75V6V75-780μm1.7mm980μm--Lead Free
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