ON Semiconductor MMBT6520LT3
- Part Number:
- MMBT6520LT3
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472188-MMBT6520LT3
- Description:
- TRANS PNP 350V 0.5A SOT-23
- Datasheet:
- MMBT6520LT3
ON Semiconductor MMBT6520LT3 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT6520LT3.
- Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC-350V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMMBT6520
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA 10V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
- Collector Emitter Breakdown Voltage350V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency40MHz
- Collector Emitter Saturation Voltage-1V
- Collector Base Voltage (VCBO)-350V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MMBT6520LT3 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 500mA volts.
MMBT6520LT3 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz
MMBT6520LT3 Applications
There are a lot of ON Semiconductor
MMBT6520LT3 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 500mA volts.
MMBT6520LT3 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz
MMBT6520LT3 Applications
There are a lot of ON Semiconductor
MMBT6520LT3 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT6520LT3 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
High Voltage PNP Bipolar Transistor
TRANS PNP 350V 0.5A SOT-23
RES SMD 9.1 OHM 5% 1/2W 1206
High Voltage PNP Bipolar Transistor
TRANS PNP 350V 0.5A SOT-23
RES SMD 9.1 OHM 5% 1/2W 1206
The three parts on the right have similar specifications to MMBT6520LT3.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeFactory Lead TimeMountWeightSeriesTerminal FinishFrequencyPower DissipationMax Breakdown VoltageContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningContact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Max FrequencyFrequency - TransitionTerminationMax Junction Temperature (Tj)Turn On Time-Max (ton)View Compare
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MMBT6520LT3OBSOLETE (Last Updated: 1 week ago)Surface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e0noObsolete1 (Unlimited)3EAR998541.21.00.95Other Transistors-350V225mWDUALGULL WING240not_compliant-500mA30MMBT65203Not Qualified1SingleSWITCHING200MHzPNPPNP1V500mA20 @ 50mA 10V50nA ICBO1V @ 5mA, 50mA350V500mA40MHz-1V-350V5V20Non-RoHS CompliantContains Lead---------------------------
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-Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99-Other Transistors-25V300mWDUALGULL WING260--200mA40MMBT41263-1SingleSWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V-250MHz-400mV25V-4V120ROHS3 CompliantLead Free15 WeeksSurface Mount7.994566mgAutomotive, AEC-Q101Matte Tin (Sn)250MHz300mW25V-200mA1mm3.05mm1.4mmNo SVHCNo------------
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-Surface MountTO-236-3, SC-59, SOT-23-3-3--55°C~150°C TJTape & Reel (TR)2000--Active1 (Unlimited)----40V300mW------MMBT3904--1Single-300MHz-NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V200mA-300mV60V6V100ROHS3 CompliantLead Free15 WeeksSurface Mount7.994566mgAutomotive, AEC-Q101-300MHz350mW40V200mA1mm3.05mm1.4mmNo SVHCNoTinSOT-23-3150°C-55°CNPN300mW40V300MHz300MHz---
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-Surface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99-Other Transistors-60V150mWDUALGULL WING260--600mA30MMBT2907A3-1Single-200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V600mA200MHz-1.6V-60V-5V100ROHS3 CompliantLead Free15 WeeksSurface Mount2.012816mgAutomotive, AEC-Q101Matte Tin (Sn) - annealed200MHz150mW60V-600mA900μm1.6mm800μmNo SVHCNo---------SMD/SMT150°C45ns
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