ON Semiconductor MMBT6517LT3G
- Part Number:
- MMBT6517LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2470505-MMBT6517LT3G
- Description:
- TRANS NPN 350V 0.1A SOT-23
- ECAD Model:
-
- Datasheet:
- MMBT6517LT3G
ON Semiconductor MMBT6517LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT6517LT3G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 7 hours ago)
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC350V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT6517
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Power - Max225mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)350V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA 10V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
- Collector Emitter Breakdown Voltage350V
- Transition Frequency40MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage350V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MMBT6517LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 40MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
MMBT6517LT3G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT3G Applications
There are a lot of ON Semiconductor
MMBT6517LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 40MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
MMBT6517LT3G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT3G Applications
There are a lot of ON Semiconductor
MMBT6517LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT6517LT3G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 350V 0.1A 3-Pin SOT-23 T/R
High Voltage NPN Bipolar Transistor
Bipolar Transistor, Npn, 350V, Full Reel
Bipolar Transistors - BJT 500mA 350V NPN
Trans GP BJT NPN 350V 0.1A 3-Pin SOT-23 T/R
High Voltage NPN Bipolar Transistor
Bipolar Transistor, Npn, 350V, Full Reel
Bipolar Transistors - BJT 500mA 350V NPN
The three parts on the right have similar specifications to MMBT6517LT3G.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeFactory Lead TimeMountWeightSeriesContinuous Collector CurrentHeightLengthWidthREACH SVHCTerminationCurrent - Collector (Ic) (Max)Max Junction Temperature (Tj)Turn On Time-Max (ton)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)Max FrequencyFrequency - TransitionView Compare
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MMBT6517LT3GLAST SHIPMENTS (Last Updated: 7 hours ago)Surface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors350V225mWDUALGULL WING260500mA200MHz40MMBT651731Single300mW225mWSWITCHING200MHzNPNNPN350V100mA20 @ 50mA 10V50nA ICBO1V @ 5mA, 50mA350V40MHz1V350V350V5V20NoRoHS CompliantLead Free--------------------- -
-Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mW-SWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V120NoROHS3 CompliantLead Free15 WeeksSurface Mount7.994566mgAutomotive, AEC-Q101-200mA1mm3.05mm1.4mmNo SVHC-----------
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-Surface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW--200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100NoROHS3 CompliantLead Free15 WeeksSurface Mount2.012816mgAutomotive, AEC-Q101-600mA900μm1.6mm800μmNo SVHCSMD/SMT600mA150°C45ns-------
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-Surface MountSC-89, SOT-490-3-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)-----250mW----300MHz-MMBT2222-1Single250mW250mW-300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V75V6V75-ROHS3 CompliantLead Free16 WeeksSurface Mount30mg--780μm1.7mm980μm--600mA--SOT-523F150°C-55°CNPN40V100MHz300MHz
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