ON Semiconductor MMBT6517LT1G
- Part Number:
- MMBT6517LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465984-MMBT6517LT1G
- Description:
- TRANS NPN 350V 0.1A SOT23
- ECAD Model:
-
- Datasheet:
- MMBT6517LT1G
ON Semiconductor MMBT6517LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT6517LT1G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published1998
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC350V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT6517
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Power - Max225mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)350V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA 10V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
- Collector Emitter Breakdown Voltage350V
- Transition Frequency40MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage350V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- Height1.11mm
- Length3.04mm
- Width2.64mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MMBT6517LT1G Overview
This device has a DC current gain of 20 @ 50mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 40MHz.As a result, it can handle voltages as low as 350V volts.The maximum collector current is 100mA volts.
MMBT6517LT1G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT1G Applications
There are a lot of ON Semiconductor
MMBT6517LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20 @ 50mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 40MHz.As a result, it can handle voltages as low as 350V volts.The maximum collector current is 100mA volts.
MMBT6517LT1G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT1G Applications
There are a lot of ON Semiconductor
MMBT6517LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT6517LT1G More Descriptions
Trans General Purpose BJT NPN 350 Volt 0.1A 3-Pin SOT-23 Tape and Reel
Trans GP BJT NPN 350V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
High Voltage NPN Bipolar Transistor
BIPOLAR Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC
Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage Max:350V; Continuous Collector Current:100Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Qualification:- Rohs Compliant: Yes |Onsemi MMBT6517LT1G
BIPOLAR TRANSISTOR, FULL REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 350V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 225mW; DC Collector Current: 100mA; DC Current Gain hFE: 15hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 30V; Current Ic Continuous a Max: 100mA; Hfe Min: 200; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power Bipolar
Trans GP BJT NPN 350V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
High Voltage NPN Bipolar Transistor
BIPOLAR Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC
Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage Max:350V; Continuous Collector Current:100Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Qualification:- Rohs Compliant: Yes |Onsemi MMBT6517LT1G
BIPOLAR TRANSISTOR, FULL REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 350V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 225mW; DC Collector Current: 100mA; DC Current Gain hFE: 15hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 30V; Current Ic Continuous a Max: 100mA; Hfe Min: 200; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power Bipolar
The three parts on the right have similar specifications to MMBT6517LT1G.
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ImagePart NumberManufacturerLifecycle StatusContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeTerminal FinishJESD-30 CodeQualification StatusConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)MountWeightSeriesContinuous Collector CurrentView Compare
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MMBT6517LT1GLAST SHIPMENTS (Last Updated: 4 days ago)TinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJCut Tape (CT)1998e3yesObsolete1 (Unlimited)3EAR99Other Transistors350V225mWDUALGULL WING260500mA200MHz40MMBT651731Single300mW225mWSWITCHING200MHzNPNNPN350V100mA20 @ 50mA 10V50nA ICBO1V @ 5mA, 50mA350V40MHz1V350V350V5V201.11mm3.04mm2.64mmNo SVHCNoRoHS CompliantLead Free---------------- -
--Surface MountSOT-523YES-SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors--DUALGULL WING260--10MMBT2222A31--150mWAMPLIFIER-NPNNPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz----------ROHS3 Compliant-12 WeeksMatte Tin (Sn)R-PDSO-G3Not QualifiedSINGLE40V600mA300MHz0.35W285ns35ns----
-
--Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mW-SWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V1201mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free15 WeeksMatte Tin (Sn)---------Surface Mount7.994566mgAutomotive, AEC-Q101-200mA
-
--Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MMBT3904----350mW---NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA-------------------40V200mA300MHz-------
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