ON Semiconductor MMBT6429LT1G
- Part Number:
- MMBT6429LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462989-MMBT6429LT1G
- Description:
- TRANS NPN 45V 0.2A SOT23
- Datasheet:
- MMBT6429LT1G
ON Semiconductor MMBT6429LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT6429LT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC45V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Frequency700MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT6429
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Gain Bandwidth Product700MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 100μA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)55V
- Emitter Base Voltage (VEBO)6V
- hFE Min500
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT6429LT1G Overview
This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 200mA volts is possible.
MMBT6429LT1G Features
the DC current gain for this device is 500 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz
MMBT6429LT1G Applications
There are a lot of ON Semiconductor
MMBT6429LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 200mA volts is possible.
MMBT6429LT1G Features
the DC current gain for this device is 500 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz
MMBT6429LT1G Applications
There are a lot of ON Semiconductor
MMBT6429LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT6429LT1G More Descriptions
45V 225mW 500@100uA,5V 200mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
MMBT Series 45 V 200 mA Surface Mount NPN Silicon Amplifier Transistor - SOT-23
ON Semi MMBT6429LT1G NPN Bipolar Transistor, 0.2 A, 45 V, 3-Pin SOT-23 | ON Semiconductor MMBT6429LT1G
Trans GP BJT NPN 45V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
MMBT6429L: Small Signal NPN General Purpose Transistor
TRANS, BIPOL, NPN, 45V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 700MHz; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 500hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MMBTxxxx Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
MMBT Series 45 V 200 mA Surface Mount NPN Silicon Amplifier Transistor - SOT-23
ON Semi MMBT6429LT1G NPN Bipolar Transistor, 0.2 A, 45 V, 3-Pin SOT-23 | ON Semiconductor MMBT6429LT1G
Trans GP BJT NPN 45V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
MMBT6429L: Small Signal NPN General Purpose Transistor
TRANS, BIPOL, NPN, 45V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 700MHz; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 500hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MMBTxxxx Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MMBT6429LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSeriesContinuous Collector CurrentTurn Off Time-Max (toff)Turn On Time-Max (ton)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyFrequency - TransitionTerminationTerminal FinishMax Junction Temperature (Tj)View Compare
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MMBT6429LT1GACTIVE (Last Updated: 4 days ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES34.535924gSILICON-55°C~150°C TJTape & Reel (TR)2004e3yesActive1 (Unlimited)3EAR99Other Transistors45V225mWDUALGULL WING260200mA700MHz40MMBT642931Single300mWAMPLIFIERHalogen Free700MHzNPNNPN45V200mA500 @ 100μA 5V100nA600mV @ 5mA, 100mA45V100MHz600mV45V55V6V5001.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free------------------
-
-15 WeeksTinSurface MountSOT-523-32.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors40V150mWDUALGULL WING260200mA300MHz40MMBT390431Single150mW--300MHzNPNNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSurface MountAutomotive, AEC-Q101200mA250ns70ns------------
-
-15 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3-37.994566mg--55°C~150°C TJTape & Reel (TR)2000--Active1 (Unlimited)---40V300mW----300MHz-MMBT3904-1Single350mW--300MHz-NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V-300mV40V60V6V1001mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeSurface MountAutomotive, AEC-Q101200mA--SOT-23-3150°C-55°CNPN300mW40V200mA300MHz300MHz---
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-15 Weeks-Surface MountSOT-523-32.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW--200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSurface MountAutomotive, AEC-Q101-600mA-45ns------600mA--SMD/SMTMatte Tin (Sn) - annealed150°C
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