MMBT6429LT1G

ON Semiconductor MMBT6429LT1G

Part Number:
MMBT6429LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2462989-MMBT6429LT1G
Description:
TRANS NPN 45V 0.2A SOT23
ECAD Model:
Datasheet:
MMBT6429LT1G

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Specifications
ON Semiconductor MMBT6429LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT6429LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    45V
  • Max Power Dissipation
    225mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    200mA
  • Frequency
    700MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBT6429
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Transistor Application
    AMPLIFIER
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    700MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    500 @ 100μA 5V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    600mV
  • Max Breakdown Voltage
    45V
  • Collector Base Voltage (VCBO)
    55V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    500
  • Height
    1.01mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBT6429LT1G Overview
This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 200mA volts is possible.

MMBT6429LT1G Features
the DC current gain for this device is 500 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz


MMBT6429LT1G Applications
There are a lot of ON Semiconductor
MMBT6429LT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT6429LT1G More Descriptions
45V 225mW 500@100uA,5V 200mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
MMBT Series 45 V 200 mA Surface Mount NPN Silicon Amplifier Transistor - SOT-23
ON Semi MMBT6429LT1G NPN Bipolar Transistor, 0.2 A, 45 V, 3-Pin SOT-23 | ON Semiconductor MMBT6429LT1G
Trans GP BJT NPN 45V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
MMBT6429L: Small Signal NPN General Purpose Transistor
TRANS, BIPOL, NPN, 45V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 700MHz; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 500hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MMBTxxxx Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to MMBT6429LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Halogen Free
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Series
    Continuous Collector Current
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Max Frequency
    Frequency - Transition
    Termination
    Terminal Finish
    Max Junction Temperature (Tj)
    View Compare
  • MMBT6429LT1G
    MMBT6429LT1G
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2004
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    45V
    225mW
    DUAL
    GULL WING
    260
    200mA
    700MHz
    40
    MMBT6429
    3
    1
    Single
    300mW
    AMPLIFIER
    Halogen Free
    700MHz
    NPN
    NPN
    45V
    200mA
    500 @ 100μA 5V
    100nA
    600mV @ 5mA, 100mA
    45V
    100MHz
    600mV
    45V
    55V
    6V
    500
    1.01mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT3904T-7-F
    -
    15 Weeks
    Tin
    Surface Mount
    SOT-523
    -
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    40V
    150mW
    DUAL
    GULL WING
    260
    200mA
    300MHz
    40
    MMBT3904
    3
    1
    Single
    150mW
    -
    -
    300MHz
    NPN
    NPN
    40V
    200mA
    100 @ 10mA 1V
    -
    300mV @ 5mA, 50mA
    40V
    300MHz
    300mV
    40V
    60V
    6V
    100
    750μm
    1.6mm
    800μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Surface Mount
    Automotive, AEC-Q101
    200mA
    250ns
    70ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT3904-7-F
    -
    15 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    7.994566mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    40V
    300mW
    -
    -
    -
    -
    300MHz
    -
    MMBT3904
    -
    1
    Single
    350mW
    -
    -
    300MHz
    -
    NPN
    40V
    200mA
    100 @ 10mA 1V
    50nA ICBO
    300mV @ 5mA, 50mA
    40V
    -
    300mV
    40V
    60V
    6V
    100
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Surface Mount
    Automotive, AEC-Q101
    200mA
    -
    -
    SOT-23-3
    150°C
    -55°C
    NPN
    300mW
    40V
    200mA
    300MHz
    300MHz
    -
    -
    -
  • MMBT2907AT-7-F
    -
    15 Weeks
    -
    Surface Mount
    SOT-523
    -
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -60V
    150mW
    DUAL
    GULL WING
    260
    -600mA
    200MHz
    30
    MMBT2907A
    3
    1
    Single
    150mW
    -
    -
    200MHz
    PNP
    PNP
    -60V
    -600mA
    100 @ 150mA 10V
    10nA ICBO
    1.6V @ 50mA, 500mA
    -60V
    200MHz
    -1.6V
    60V
    -60V
    -5V
    100
    900μm
    1.6mm
    800μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Surface Mount
    Automotive, AEC-Q101
    -600mA
    -
    45ns
    -
    -
    -
    -
    -
    -
    600mA
    -
    -
    SMD/SMT
    Matte Tin (Sn) - annealed
    150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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