ON Semiconductor MMBT6428LT1G
- Part Number:
- MMBT6428LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462727-MMBT6428LT1G
- Description:
- TRANS NPN 50V 0.2A SOT23
- Datasheet:
- MMBT6428LT1G
ON Semiconductor MMBT6428LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT6428LT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Frequency700MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT6428
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product700MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100μA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min250
- Height1.11mm
- Length3.04mm
- Width2.64mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT6428LT1G Overview
DC current gain in this device equals 250 @ 100μA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 200mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 200mA volts.
MMBT6428LT1G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz
MMBT6428LT1G Applications
There are a lot of ON Semiconductor
MMBT6428LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 250 @ 100μA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 200mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 200mA volts.
MMBT6428LT1G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz
MMBT6428LT1G Applications
There are a lot of ON Semiconductor
MMBT6428LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT6428LT1G More Descriptions
Bipolar (BJT) Transistor NPN 50V 200mA 700MHz 225mW Surface Mount SOT-23-3 (TO-236)
ON Semi MMBT6428LT1G NPN Bipolar Transistor; 0.2 A; 50 V; 3-Pin SOT-23
Trans GP BJT NPN 50V 0.2A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
MMBT Series 50 V 200 mA Surface Mount NPN Silicon Amplifier Transistor - SOT-23
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 50V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
Transistor, NPN, 50V, 0.2A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:700MHz; Power
Transistors - Bipolar (BJT) - Single TO-236-3, SC-59, SOT-23-3 1 (Unlimited) Tape & Reel (TR) Surface Mount NPN 250 @ 100μA 5V 600mV @ 5mA, 100mA -55°C~150°C TJ 100nA TRANS NPN 50V 0.2A SOT23
TRANSISTOR, NPN, 50V, 0.2A, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 700MHz; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 250hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
ON Semi MMBT6428LT1G NPN Bipolar Transistor; 0.2 A; 50 V; 3-Pin SOT-23
Trans GP BJT NPN 50V 0.2A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
MMBT Series 50 V 200 mA Surface Mount NPN Silicon Amplifier Transistor - SOT-23
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 50V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
Transistor, NPN, 50V, 0.2A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:700MHz; Power
Transistors - Bipolar (BJT) - Single TO-236-3, SC-59, SOT-23-3 1 (Unlimited) Tape & Reel (TR) Surface Mount NPN 250 @ 100μA 5V 600mV @ 5mA, 100mA -55°C~150°C TJ 100nA TRANS NPN 50V 0.2A SOT23
TRANSISTOR, NPN, 50V, 0.2A, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 700MHz; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 250hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MMBT6428LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightSeriesContinuous Collector CurrentTurn Off Time-Max (toff)Turn On Time-Max (ton)Power - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBT6428LT1GACTIVE (Last Updated: 4 days ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors50V225mWDUALGULL WING260200mA700MHz40MMBT642831Single300mWAMPLIFIER700MHzNPNNPN50V200mA250 @ 100μA 5V100nA600mV @ 5mA, 100mA50V100MHz600mV50V60V6V2501.11mm3.04mm2.64mmNo SVHCNoROHS3 CompliantLead Free----------------
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-15 WeeksTinSurface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors40V150mWDUALGULL WING260200mA300MHz40MMBT390431Single150mW-300MHzNPNNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSurface Mount2.012816mgAutomotive, AEC-Q101200mA250ns70ns---------
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---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MMBT3904-------NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA--------------------350mW40V200mA300MHz-----
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-16 Weeks-Surface MountSC-89, SOT-490-3-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)----250mW----300MHz-MMBT2222-1Single250mW-300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V75V6V75780μm1.7mm980μm--ROHS3 CompliantLead FreeSurface Mount30mg----250mW40V600mA300MHzSOT-523F150°C-55°CNPN100MHz
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