ON Semiconductor MMBT6428LT1
- Part Number:
- MMBT6428LT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466835-MMBT6428LT1
- Description:
- TRANS NPN 50V 0.2A SOT23
- Datasheet:
- MMBT64(28, 29)LT1
ON Semiconductor MMBT6428LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT6428LT1.
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Additional FeatureLOW NOISE
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- JEDEC-95 CodeTO-236AB
- Transition Frequency100MHz
- Collector Current-Max (IC)0.2A
- DC Current Gain-Min (hFE)250
- Collector-Emitter Voltage-Max50V
- RoHS StatusNon-RoHS Compliant
MMBT6428LT1 Overview
A transition frequency of 100MHz is present in the part.There is a setting of 50V for maximal collector-Emitter voltage.
MMBT6428LT1 Features
a transition frequency of 100MHz
MMBT6428LT1 Applications
There are a lot of Rochester Electronics, LLC
MMBT6428LT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
A transition frequency of 100MHz is present in the part.There is a setting of 50V for maximal collector-Emitter voltage.
MMBT6428LT1 Features
a transition frequency of 100MHz
MMBT6428LT1 Applications
There are a lot of Rochester Electronics, LLC
MMBT6428LT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT6428LT1 More Descriptions
Cut Tape (CT) Single 3 LOW NOISE Bipolar (BJT) Transistor 200mA 225mW 700MHz 60V
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Bipolar Transistor; Power Dissipation, Pd:0.3W; DC Current Gain Min (hfe):250; C-E Breakdown Voltage:50V; Collector Current:0.2A; DC Current Gain Max (hfe):650; Leaded Process Compatible:No; Package/Case:SOT-23 RoHS Compliant: No
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Bipolar Transistor; Power Dissipation, Pd:0.3W; DC Current Gain Min (hfe):250; C-E Breakdown Voltage:50V; Collector Current:0.2A; DC Current Gain Max (hfe):650; Leaded Process Compatible:No; Package/Case:SOT-23 RoHS Compliant: No
The three parts on the right have similar specifications to MMBT6428LT1.
-
ImagePart NumberManufacturerSurface MountTransistor Element MaterialPackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeTransition FrequencyCollector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxRoHS StatusFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePublishedECCN CodeSubcategoryBase Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)Contact PlatingMountNumber of PinsWeightSeriesVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBT6428LT1YESSILICONTape & Reel (TR)e0yesObsolete1 (Unlimited)3TIN LEADLOW NOISEDUALGULL WING240303R-PDSO-G3COMMERCIAL1SINGLEAMPLIFIERNPNTO-236AB100MHz0.2A25050VNon-RoHS Compliant----------------------------------------------------
-
YESSILICONTape & Reel (TR)e3yesActive1 (Unlimited)3Matte Tin (Sn)-DUALGULL WING260103R-PDSO-G3Not Qualified1SINGLEAMPLIFIERNPN-300MHz---ROHS3 Compliant12 WeeksSurface MountSOT-523-55°C~150°C TJ2005EAR99Other TransistorsMMBT2222A150mWNPN75 @ 10mA 10V100nA1V @ 50mA, 500mA40V600mA300MHz0.35W285ns35ns--------------------------------
-
-SILICONTape & Reel (TR)e3yesActive1 (Unlimited)3--DUALGULL WING260403--1--NPN-300MHz---ROHS3 Compliant15 WeeksSurface MountSOT-523-55°C~150°C TJ2007EAR99Other TransistorsMMBT3904-NPN100 @ 10mA 1V-300mV @ 5mA, 50mA----250ns70nsTinSurface Mount32.012816mgAutomotive, AEC-Q10140V150mW200mA300MHzSingle150mW300MHz40V200mA40V300mV40V60V6V100200mA750μm1.6mm800μmNo SVHCNoLead Free-----
-
--Tape & Reel (TR)--Active1 (Unlimited)----------1--------ROHS3 Compliant15 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-55°C~150°C TJ2000--MMBT3904300mWNPN100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V200mA300MHz---TinSurface Mount37.994566mgAutomotive, AEC-Q10140V300mW-300MHzSingle350mW300MHz40V200mA40V300mV40V60V6V100200mA1mm3.05mm1.4mmNo SVHCNoLead FreeSOT-23-3150°C-55°CNPN300MHz
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