ON Semiconductor MMBT5551LT1G

Name: MMBT5551LT1G
Brand: ON Semiconductor
SKU: 2463147-MMBT5551LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBT5551LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2463147-MMBT5551LT1G

Description:: TRANS NPN 160V 0.6A SOT23

ECAD Model:

Datasheet:: MMBT5551LT1G

Specifications

ON Semiconductor MMBT5551LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT5551LT1G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Voltage - Rated DC
160V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
600mA
Base Part Number
MMBT5551
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
225mW
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
160V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
80
Max Junction Temperature (Tj)
150°C
VCEsat-Max
0.2 V
Height
1.11mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMBT5551LT1G Description
The MMBT5551LT1G is an NPN Silicon High Voltage Transistor developed for applications that require specific site and control changes. According to the MMBT5551LT1G datasheet, this transistor is PPAP capable and AEC-Q101 qualified. The NPN Bipolar High Voltage Transistor is intended for general-purpose switching applications. The MMBT5551LT1G is packaged in a SOT-23 package, which is also intended for low-power surface mount applications.

MMBT5551LT1G Features
Pb?Free Devices are available
Collector-Emitter Breakdown Voltage 160 V
Miniature SOT-23 Surface Mount Package Saves Board Space>
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

MMBT5551LT1G Applications
Industrial
Automotive
Switching applications
Lower power surface mount applications

MMBT5551LT1G More Descriptions

160V 225mW 600mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Transistor GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R - Tape and Reel
MMBT5551L Series 160 V 600 mA Surface Mount NPN Transistor - SOT-23
Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
ON Semi MMBT5551LT1G NPN Bipolar Transistor, 0.06 A, 160 V, 3-Pin SOT-23 | ON Semiconductor MMBT5551LT1G
Transistor NPN, SOT-23-3 (TO-236) 160V 600mASurface Mount
High Voltage NPN Bipolar Transistor
TRANSISTOR, NPN, 160V, 600MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 30hFE; Tran
Bjt, Npn, 160V, Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:160V; Continuous Collector Current:60Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Onsemi MMBT5551LT1G.

Product Comparison

The three parts on the right have similar specifications to MMBT5551LT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Current Rating

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Max Junction Temperature (Tj)

VCEsat-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Series

Peak Reflow Temperature (Cel)

Reach Compliance Code

Frequency

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Gain Bandwidth Product

Transition Frequency

Continuous Collector Current

Termination

Terminal Finish

Subcategory

Current - Collector (Ic) (Max)

Turn On Time-Max (ton)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Polarity

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Max Frequency

Frequency - Transition

View Compare
MMBT5551LT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

4 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

4.535924g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

160V

225mW

DUAL

GULL WING

600mA

MMBT5551

3

1

Single

225mW

SWITCHING

N-CHANNEL

NPN

160V

600mA

80 @ 10mA 5V

100nA

200mV @ 5mA, 50mA

160V

200mV

160V

180V

6V

80

150°C

0.2 V

1.11mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMBT4124-7

Diodes Incorporated

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e0

-

Obsolete

1 (Unlimited)

3

EAR99

25V

300mW

DUAL

GULL WING

200mA

MMBT4124

3

1

Single

300mW

SWITCHING

NPN

NPN

25V

200mA

120 @ 2mA 1V

50nA ICBO

300mV @ 5mA, 50mA

25V

-

25V

30V

5V

120

-

-

1mm

3.05mm

1.4mm

No SVHC

-

Non-RoHS Compliant

Contains Lead

Surface Mount

Automotive, AEC-Q101

235

not_compliant

300MHz

10

Not Qualified

300MHz

300MHz

200mA

-

-

-

-

-

-

-

-

-

-

-

-

-

MMBT5551LT1G vs MMBT4124-7
MMBT2907AT-7-F

Diodes Incorporated

-

15 Weeks

-

Surface Mount

SOT-523

-

3

2.012816mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

-60V

150mW

DUAL

GULL WING

-600mA

MMBT2907A

3

1

Single

150mW

-

PNP

PNP

-60V

-600mA

100 @ 150mA 10V

10nA ICBO

1.6V @ 50mA, 500mA

-60V

-1.6V

60V

-60V

-5V

100

150°C

-

900μm

1.6mm

800μm

No SVHC

No

ROHS3 Compliant

Lead Free

Surface Mount

Automotive, AEC-Q101

260

-

200MHz

30

-

200MHz

200MHz

-600mA

SMD/SMT

Matte Tin (Sn) - annealed

Other Transistors

600mA

45ns

-

-

-

-

-

-

-

-

MMBT5551LT1G vs MMBT2907AT-7-F
MMBT2222AT

Fairchild/ON Semiconductor

-

16 Weeks

-

Surface Mount

SC-89, SOT-490

-

3

30mg

-

150°C TJ

Tape & Reel (TR)

2004

-

-

Last Time Buy

1 (Unlimited)

-

-

-

250mW

-

-

-

MMBT2222

-

1

Single

250mW

-

-

NPN

40V

600mA

100 @ 150mA 1V

-

1V @ 50mA, 500mA

40V

1V

40V

75V

6V

75

-

-

780μm

1.7mm

980μm

-

-

ROHS3 Compliant

Lead Free

Surface Mount

-

-

-

300MHz

-

-

300MHz

-

-

-

-

-

600mA

-

SOT-523F

150°C

-55°C

NPN

250mW

40V

100MHz

300MHz

MMBT5551LT1G vs MMBT2222AT