Micro Commercial Co MMBT5551-TP
- Part Number:
- MMBT5551-TP
- Manufacturer:
- Micro Commercial Co
- Ventron No:
- 2462985-MMBT5551-TP
- Description:
- TRANS NPN 160V 0.6A SOT23
- Datasheet:
- MMBT5551-TP
Micro Commercial Co MMBT5551-TP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co MMBT5551-TP.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMMBT5551
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max300mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)160V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)0.3W
- RoHS StatusROHS3 Compliant
MMBT5551-TP Overview
In this device, the DC current gain is 100 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 160V.
MMBT5551-TP Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
MMBT5551-TP Applications
There are a lot of Micro Commercial Co
MMBT5551-TP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 160V.
MMBT5551-TP Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
MMBT5551-TP Applications
There are a lot of Micro Commercial Co
MMBT5551-TP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT5551-TP More Descriptions
160V 300mW 100@10mA,5V 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
MMBT5551 Series 160 V 600 mA NPN Plastic Encapsulate Transistor - SOT-23-3
600mA 300mW NPN General-Purpose Amplifier, SOT-23, 7IN. REEL
BJT, NPN, 160VDC, SOT-23; Transistor Pol; BJT, NPN, 160VDC, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 600mA; DC Current Gain hFE: 50hFE; No. of Pins: 3Pins
Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
MMBT5551 Series 160 V 600 mA NPN Plastic Encapsulate Transistor - SOT-23-3
600mA 300mW NPN General-Purpose Amplifier, SOT-23, 7IN. REEL
BJT, NPN, 160VDC, SOT-23; Transistor Pol; BJT, NPN, 160VDC, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 600mA; DC Current Gain hFE: 50hFE; No. of Pins: 3Pins
The three parts on the right have similar specifications to MMBT5551-TP.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)RoHS StatusContact PlatingMountNumber of PinsWeightSeriesVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentTurn Off Time-Max (toff)Turn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningLead FreeTransistor ApplicationSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBT5551-TP12 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other TransistorsDUALGULL WING26010MMBT55513R-PDSO-G3Not Qualified1SINGLE300mWNPNNPN100 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA160V600mA100MHz100MHz0.3WROHS3 Compliant------------------------------------
-
15 WeeksSurface MountSOT-523-SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99-Other TransistorsDUALGULL WING26040MMBT39043--1--NPNNPN100 @ 10mA 1V-300mV @ 5mA, 50mA--300MHz--ROHS3 CompliantTinSurface Mount32.012816mgAutomotive, AEC-Q10140V150mW200mA300MHzSingle150mW300MHz40V200mA40V300mV40V60V6V100200mA250ns70ns750μm1.6mm800μmNo SVHCNoLead Free------
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15 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other TransistorsDUALGULL WING26040MMBT41263--1--PNPPNP120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA--250MHz--ROHS3 Compliant-Surface Mount37.994566mgAutomotive, AEC-Q101-25V300mW-200mA250MHzSingle300mW250MHz25V200mA25V-400mV25V25V-4V120-200mA--1mm3.05mm1.4mmNo SVHCNoLead FreeSWITCHING-----
-
16 WeeksSurface MountSC-89, SOT-490--150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)--------MMBT2222---1-250mW-NPN100 @ 150mA 1V-1V @ 50mA, 500mA40V600mA-300MHz-ROHS3 Compliant-Surface Mount330mg--250mW-300MHzSingle250mW300MHz40V600mA40V1V40V75V6V75---780μm1.7mm980μm--Lead Free-SOT-523F150°C-55°CNPN100MHz
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