MMBT5551-TP

Micro Commercial Co MMBT5551-TP

Part Number:
MMBT5551-TP
Manufacturer:
Micro Commercial Co
Ventron No:
2462985-MMBT5551-TP
Description:
TRANS NPN 160V 0.6A SOT23
ECAD Model:
Datasheet:
MMBT5551-TP

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Specifications
Micro Commercial Co MMBT5551-TP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co MMBT5551-TP.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    MMBT5551
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    300mW
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 5mA, 50mA
  • Voltage - Collector Emitter Breakdown (Max)
    160V
  • Current - Collector (Ic) (Max)
    600mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • Power Dissipation-Max (Abs)
    0.3W
  • RoHS Status
    ROHS3 Compliant
Description
MMBT5551-TP Overview
In this device, the DC current gain is 100 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 160V.

MMBT5551-TP Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz


MMBT5551-TP Applications
There are a lot of Micro Commercial Co
MMBT5551-TP applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT5551-TP More Descriptions
160V 300mW 100@10mA,5V 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
MMBT5551 Series 160 V 600 mA NPN Plastic Encapsulate Transistor - SOT-23-3
600mA 300mW NPN General-Purpose Amplifier, SOT-23, 7IN. REEL
BJT, NPN, 160VDC, SOT-23; Transistor Pol; BJT, NPN, 160VDC, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 600mA; DC Current Gain hFE: 50hFE; No. of Pins: 3Pins
Product Comparison
The three parts on the right have similar specifications to MMBT5551-TP.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    Power Dissipation-Max (Abs)
    RoHS Status
    Contact Plating
    Mount
    Number of Pins
    Weight
    Series
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Transistor Application
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Max Frequency
    View Compare
  • MMBT5551-TP
    MMBT5551-TP
    12 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    DUAL
    GULL WING
    260
    10
    MMBT5551
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    300mW
    NPN
    NPN
    100 @ 10mA 5V
    50nA ICBO
    500mV @ 5mA, 50mA
    160V
    600mA
    100MHz
    100MHz
    0.3W
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT3904T-7-F
    15 Weeks
    Surface Mount
    SOT-523
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MMBT3904
    3
    -
    -
    1
    -
    -
    NPN
    NPN
    100 @ 10mA 1V
    -
    300mV @ 5mA, 50mA
    -
    -
    300MHz
    -
    -
    ROHS3 Compliant
    Tin
    Surface Mount
    3
    2.012816mg
    Automotive, AEC-Q101
    40V
    150mW
    200mA
    300MHz
    Single
    150mW
    300MHz
    40V
    200mA
    40V
    300mV
    40V
    60V
    6V
    100
    200mA
    250ns
    70ns
    750μm
    1.6mm
    800μm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
  • MMBT4126-7-F
    15 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MMBT4126
    3
    -
    -
    1
    -
    -
    PNP
    PNP
    120 @ 2mA 1V
    50nA ICBO
    400mV @ 5mA, 50mA
    -
    -
    250MHz
    -
    -
    ROHS3 Compliant
    -
    Surface Mount
    3
    7.994566mg
    Automotive, AEC-Q101
    -25V
    300mW
    -200mA
    250MHz
    Single
    300mW
    250MHz
    25V
    200mA
    25V
    -400mV
    25V
    25V
    -4V
    120
    -200mA
    -
    -
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    Lead Free
    SWITCHING
    -
    -
    -
    -
    -
  • MMBT2222AT
    16 Weeks
    Surface Mount
    SC-89, SOT-490
    -
    -
    150°C TJ
    Tape & Reel (TR)
    2004
    -
    -
    Last Time Buy
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    MMBT2222
    -
    -
    -
    1
    -
    250mW
    -
    NPN
    100 @ 150mA 1V
    -
    1V @ 50mA, 500mA
    40V
    600mA
    -
    300MHz
    -
    ROHS3 Compliant
    -
    Surface Mount
    3
    30mg
    -
    -
    250mW
    -
    300MHz
    Single
    250mW
    300MHz
    40V
    600mA
    40V
    1V
    40V
    75V
    6V
    75
    -
    -
    -
    780μm
    1.7mm
    980μm
    -
    -
    Lead Free
    -
    SOT-523F
    150°C
    -55°C
    NPN
    100MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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