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MMBT5550LT1

ON Semiconductor MMBT5550LT1

Part Number:
MMBT5550LT1
Manufacturer:
ON Semiconductor
Ventron No:
2466832-MMBT5550LT1
Description:
TRANS NPN 140V 0.6A SOT23
ECAD Model:
Datasheet:
MMBT5550LT1

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Specifications
ON Semiconductor MMBT5550LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT5550LT1.
  • Packaging
    Tape & Reel (TR)
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Pin Count
    3
  • RoHS Status
    Non-RoHS Compliant
Description
MMBT5550LT1 Overview


MMBT5550LT1 Features


MMBT5550LT1 Applications
There are a lot of Rochester Electronics, LLC
MMBT5550LT1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT5550LT1 More Descriptions
Cut Tape (CT) Single 3 Contains Lead Bipolar (BJT) Transistor 600mA 225mW 180V 150C
Small Signal Bipolar Transistor, 0.06A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
High Voltage NPN Bipolar Transistor
Trans GP BJT NPN 140V 0.06A 3-Pin SOT-23 T/R
Product Comparison
The three parts on the right have similar specifications to MMBT5550LT1.
  • Image
    Part Number
    Manufacturer
    Packaging
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Pin Count
    RoHS Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Series
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Contact Plating
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Max Frequency
    Frequency - Transition
    Termination
    Max Junction Temperature (Tj)
    Turn On Time-Max (ton)
    View Compare
  • MMBT5550LT1
    MMBT5550LT1
    ON Semiconductor
    Tape & Reel (TR)
    yes
    Obsolete
    1 (Unlimited)
    3
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT4126-7-F
    MMBT4126-7-F
    Diodes Incorporated
    Tape & Reel (TR)
    yes
    Active
    1 (Unlimited)
    3
    ROHS3 Compliant
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Automotive, AEC-Q101
    2008
    e3
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    -25V
    300mW
    DUAL
    GULL WING
    260
    -200mA
    250MHz
    40
    MMBT4126
    1
    Single
    300mW
    SWITCHING
    250MHz
    PNP
    PNP
    25V
    200mA
    120 @ 2mA 1V
    50nA ICBO
    400mV @ 5mA, 50mA
    25V
    250MHz
    -400mV
    25V
    25V
    -4V
    120
    -200mA
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MMBT5550LT1 vs MMBT4126-7-F
  • MMBT3904-7-F
    MMBT3904-7-F
    Diodes Incorporated
    Tape & Reel (TR)
    -
    Active
    1 (Unlimited)
    -
    ROHS3 Compliant
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    -
    -55°C~150°C TJ
    Automotive, AEC-Q101
    2000
    -
    -
    -
    -
    -
    40V
    300mW
    -
    -
    -
    -
    300MHz
    -
    MMBT3904
    1
    Single
    350mW
    -
    300MHz
    -
    NPN
    40V
    200mA
    100 @ 10mA 1V
    50nA ICBO
    300mV @ 5mA, 50mA
    40V
    -
    300mV
    40V
    60V
    6V
    100
    200mA
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    Lead Free
    Tin
    SOT-23-3
    150°C
    -55°C
    NPN
    300mW
    40V
    200mA
    300MHz
    300MHz
    -
    -
    -
    MMBT5550LT1 vs MMBT3904-7-F
  • MMBT2907AT-7-F
    MMBT2907AT-7-F
    Diodes Incorporated
    Tape & Reel (TR)
    yes
    Active
    1 (Unlimited)
    3
    ROHS3 Compliant
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Automotive, AEC-Q101
    2007
    e3
    3
    EAR99
    Matte Tin (Sn) - annealed
    Other Transistors
    -60V
    150mW
    DUAL
    GULL WING
    260
    -600mA
    200MHz
    30
    MMBT2907A
    1
    Single
    150mW
    -
    200MHz
    PNP
    PNP
    -60V
    -600mA
    100 @ 150mA 10V
    10nA ICBO
    1.6V @ 50mA, 500mA
    -60V
    200MHz
    -1.6V
    60V
    -60V
    -5V
    100
    -600mA
    900μm
    1.6mm
    800μm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    600mA
    -
    -
    SMD/SMT
    150°C
    45ns
    MMBT5550LT1 vs MMBT2907AT-7-F
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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