ON Semiconductor MMBT5401WT1G
- Part Number:
- MMBT5401WT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2464948-MMBT5401WT1G
- Description:
- TRANS PNP 150V 0.5A SOT23
- ECAD Model:
-
- Datasheet:
- MMBT5401WT1G
ON Semiconductor MMBT5401WT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT5401WT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation400mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Gain Bandwidth Product300MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage150V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-200mV
- Collector Base Voltage (VCBO)-160V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT5401WT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 500mA volts.
MMBT5401WT1G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
MMBT5401WT1G Applications
There are a lot of ON Semiconductor
MMBT5401WT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 500mA volts.
MMBT5401WT1G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
MMBT5401WT1G Applications
There are a lot of ON Semiconductor
MMBT5401WT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT5401WT1G More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 150V 0.5A 3-Pin SC-70 T/R - Tape and Reel
High Voltage PNP Bipolar Transistor
MMBT5401W Series -150 V -500 mA SMT PNP High Voltage Transistor - SC-70-3
Trans GP BJT PNP 150V 0.5A 3-Pin SC-70 T/R - Tape and Reel
High Voltage PNP Bipolar Transistor
MMBT5401W Series -150 V -500 mA SMT PNP High Voltage Transistor - SC-70-3
The three parts on the right have similar specifications to MMBT5401WT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPin CountNumber of ElementsElement ConfigurationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)RoHS StatusLead FreeMountWeightSeriesVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPower DissipationTransistor ApplicationMax Breakdown VoltageEmitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningTerminationMax Junction Temperature (Tj)Turn On Time-Max (ton)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Max FrequencyFrequency - TransitionView Compare
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MMBT5401WT1GACTIVE (Last Updated: 1 day ago)2 WeeksSurface MountSC-70, SOT-323YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors400mWDUALGULL WING31Single300MHzPNPPNP500mV500mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA150V500mA100MHz-200mV-160VROHS3 CompliantLead Free-------------------------------- -
-15 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors300mWDUALGULL WING31Single250MHzPNPPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V-250MHz-400mV25VROHS3 CompliantLead FreeSurface Mount7.994566mgAutomotive, AEC-Q101-25V260-200mA250MHz40MMBT4126300mWSWITCHING25V-4V120-200mA1mm3.05mm1.4mmNo SVHCNo-----------
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-15 WeeksSurface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors150mWDUALGULL WING31Single200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V600mA200MHz-1.6V-60VROHS3 CompliantLead FreeSurface Mount2.012816mgAutomotive, AEC-Q101-60V260-600mA200MHz30MMBT2907A150mW-60V-5V100-600mA900μm1.6mm800μmNo SVHCNoSMD/SMT150°C45ns--------
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-16 WeeksSurface MountSC-89, SOT-490-3-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)----250mW---1Single300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V600mA-1V75VROHS3 CompliantLead FreeSurface Mount30mg----300MHz-MMBT2222250mW-40V6V75-780μm1.7mm980μm-----SOT-523F150°C-55°CNPN250mW40V100MHz300MHz
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