Diodes Incorporated MMBT5401-7-F
- Part Number:
- MMBT5401-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3553779-MMBT5401-7-F
- Description:
- TRANS PNP 150V 0.6A SMD SOT23-3
- Datasheet:
- MMBT5401-7-F
Diodes Incorporated MMBT5401-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBT5401-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- Voltage - Rated DC-150V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-200mA
- Frequency300MHz
- Base Part NumberMMBT5401
- Pin Count3
- Number of Elements1
- Voltage150V
- Element ConfigurationSingle
- Current2A
- Power Dissipation310mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-150V
- Max Collector Current-600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage-150V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage150V
- Collector Base Voltage (VCBO)-160V
- Emitter Base Voltage (VEBO)-5V
- hFE Min60
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current-200mA
- VCEsat-Max0.5 V
- Collector-Base Capacitance-Max6pF
- Height1.1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT5401-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -200mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 150V volts before it breaks down.A maximum collector current of -600mA volts can be achieved.
MMBT5401-7-F Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 100MHz
MMBT5401-7-F Applications
There are a lot of Diodes Incorporated
MMBT5401-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -200mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 150V volts before it breaks down.A maximum collector current of -600mA volts can be achieved.
MMBT5401-7-F Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 100MHz
MMBT5401-7-F Applications
There are a lot of Diodes Incorporated
MMBT5401-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT5401-7-F More Descriptions
MMBT5401 Series PNP -150 V 300 mW Small Signal Transistor Surface Mount-SOT-23-3
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 150V 0.6A 3Pin SOT23 | Diodes Inc MMBT5401-7-F
Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R
TRANS, PNP, -150V, -0.6A, 0.31W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -150V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 310mW; DC Collector Current: -600mA; DC Current Gain hFE: 50hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 150V 0.6A 3Pin SOT23 | Diodes Inc MMBT5401-7-F
Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R
TRANS, PNP, -150V, -0.6A, 0.31W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -150V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 310mW; DC Collector Current: -600mA; DC Current Gain hFE: 50hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to MMBT5401-7-F.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberPin CountNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Continuous Collector CurrentVCEsat-MaxCollector-Base Capacitance-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Max FrequencyFrequency - TransitionView Compare
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MMBT5401-7-F19 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY-150V300mWDUALGULL WING-200mA300MHzMMBT540131150VSingle2A310mWSWITCHING300MHzPNPPNP-150V-600mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA-150V600mA100MHz-500mV150V-160V-5V60150°C-200mA0.5 V6pF1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mg--55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012000--Active1 (Unlimited)----40V300mW---300MHzMMBT3904-1-Single-350mW-300MHz-NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V200mA-300mV40V60V6V100-200mA--1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeTinSOT-23-3150°C-55°CNPN300mW40V300MHz300MHz
-
--Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)----Obsolete1 (Unlimited)----------MMBT3904---------NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA-200mA----------------------350mW40V-300MHz
-
16 WeeksSurface MountSurface MountSC-89, SOT-490330mg-150°C TJTape & Reel (TR)-2004--Last Time Buy1 (Unlimited)-----250mW---300MHzMMBT2222-1-Single-250mW-300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V600mA-1V40V75V6V75----780μm1.7mm980μm--ROHS3 CompliantLead Free-SOT-523F150°C-55°CNPN250mW40V100MHz300MHz
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