Fairchild/ON Semiconductor MMBT5210
- Part Number:
- MMBT5210
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845693-MMBT5210
- Description:
- TRANS NPN 50V 0.1A SOT-23
- Datasheet:
- 2N5210/MMBT5210
Fairchild/ON Semiconductor MMBT5210 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT5210.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time7 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating500mA
- Frequency30MHz
- Base Part NumberMMBT5210
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product30MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100μA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage700mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)4.5V
- hFE Min200
- Height930μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MMBT5210 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
MMBT5210 Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 500mA
a transition frequency of 30MHz
MMBT5210 Applications
There are a lot of ON Semiconductor
MMBT5210 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
MMBT5210 Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 500mA
a transition frequency of 30MHz
MMBT5210 Applications
There are a lot of ON Semiconductor
MMBT5210 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT5210 More Descriptions
Bipolar Transistors - BJT NPN Transistor General Purpose
Trans General Purpose BJT NPN 50 Volt 0.1A 3-Pin SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
MMBT5219 Series 50 V 100 mA NPN General Purpose Amplifier - SOT-23-3
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 µA to 50 mA.
TRANSISTOR NPN 0.1A 50V SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:350mW; DC Collector Current:100mA; DC Current Gain hFE:250; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:700mV; Current Ic Continuous a Max:10mA; Gain Bandwidth ft Typ:30MHz; Hfe Min:250; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD; Transistor Type:General Purpose
Trans General Purpose BJT NPN 50 Volt 0.1A 3-Pin SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
MMBT5219 Series 50 V 100 mA NPN General Purpose Amplifier - SOT-23-3
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 µA to 50 mA.
TRANSISTOR NPN 0.1A 50V SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:350mW; DC Collector Current:100mA; DC Current Gain hFE:250; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:700mV; Current Ic Continuous a Max:10mA; Gain Bandwidth ft Typ:30MHz; Hfe Min:250; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD; Transistor Type:General Purpose
The three parts on the right have similar specifications to MMBT5210.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusContinuous Collector CurrentSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyFrequency - TransitionView Compare
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MMBT5210LAST SHIPMENTS (Last Updated: 1 week ago)7 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2002e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors50V350mWDUALGULL WING500mA30MHzMMBT52101Single350mWAMPLIFIER30MHzNPNNPN50V100mA200 @ 100μA 5V50nA ICBO700mV @ 1mA, 10mA50V30MHz700mV50V50V4.5V200930μm2.9mm1.3mmNo SVHCNoRoHS CompliantLead Free-----------------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99--25V300mWDUALGULL WING200mA300MHzMMBT41241Single300mWSWITCHING300MHzNPNNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz-25V30V5V1201mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains LeadAutomotive, AEC-Q101235not_compliant103Not Qualified200mA---------
-
-15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-25V300mWDUALGULL WING-200mA250MHzMMBT41261Single300mWSWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V1201mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeAutomotive, AEC-Q101260-403--200mA---------
-
-16 WeeksSurface MountSurface MountSC-89, SOT-490330mg-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)-----250mW---300MHzMMBT22221Single250mW-300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V75V6V75780μm1.7mm980μm--ROHS3 CompliantLead Free-------SOT-523F150°C-55°CNPN250mW40V600mA100MHz300MHz
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