Diodes Incorporated MMBT4403-7-F
- Part Number:
- MMBT4403-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3553742-MMBT4403-7-F
- Description:
- TRANS PNP 40V 0.6A SOT23-3
- Datasheet:
- MMBT4403-7-F
Diodes Incorporated MMBT4403-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBT4403-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-600mA
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT4403
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-750mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Continuous Collector Current-600mA
- Turn Off Time-Max (toff)255ns
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT4403-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is -750mV, which allows for maximum design flexibility.When VCE saturation is 750mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -600mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
MMBT4403-7-F Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT4403-7-F Applications
There are a lot of Diodes Incorporated
MMBT4403-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is -750mV, which allows for maximum design flexibility.When VCE saturation is 750mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -600mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
MMBT4403-7-F Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT4403-7-F Applications
There are a lot of Diodes Incorporated
MMBT4403-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT4403-7-F More Descriptions
Bipolar (BJT) Single Transistor, PNP, -40 V, 300 mW, -600 mA, 100 RoHS Compliant: Yes
MMBT4403 Series PNP 40 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 40V 0.6A Automotive 3-Pin SOT-23 T/R
Trans GP BJT PNP 40V 0.6A 3Pin SOT23 | Diodes Inc MMBT4403-7-F
BIPOLAR TRANSISTOR PNP SOT-23 RING TERMINALBIPOLAR TRANSISTOR PNP SOT-23 ROHS 3K
TRANSISTOR, PNP, 40V, 0.6A, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC C; Available until stocks are exhausted Alternative available
MMBT4403 Series PNP 40 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 40V 0.6A Automotive 3-Pin SOT-23 T/R
Trans GP BJT PNP 40V 0.6A 3Pin SOT23 | Diodes Inc MMBT4403-7-F
BIPOLAR TRANSISTOR PNP SOT-23 RING TERMINAL
TRANSISTOR, PNP, 40V, 0.6A, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC C; Available until stocks are exhausted Alternative available
The three parts on the right have similar specifications to MMBT4403-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentTurn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeCurrent - Collector Cutoff (Max)TerminationCurrent - Collector (Ic) (Max)Max Junction Temperature (Tj)Turn On Time-Max (ton)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)Max FrequencyFrequency - TransitionView Compare
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MMBT4403-7-F19 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012017e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-40V300mWDUALGULL WING260-600mA200MHz40MMBT440331Single350mW300mWSWITCHING200MHzPNPPNP40V600mA100 @ 150mA 2V750mV @ 50mA, 500mA40V200MHz-750mV40V40V-5V100-600mA255ns1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mW-SWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V120-200mA-1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free50nA ICBO-----------
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15 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW--200MHzPNPPNP-60V-600mA100 @ 150mA 10V1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100-600mA-900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free10nA ICBOSMD/SMT600mA150°C45ns-------
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16 WeeksSurface MountSurface MountSC-89, SOT-490330mg-150°C TJTape & Reel (TR)-2004--Last Time Buy1 (Unlimited)-----250mW----300MHz-MMBT2222-1Single250mW250mW-300MHz-NPN40V600mA100 @ 150mA 1V1V @ 50mA, 500mA40V-1V40V75V6V75--780μm1.7mm980μm--ROHS3 CompliantLead Free--600mA--SOT-523F150°C-55°CNPN40V100MHz300MHz
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