ON Semiconductor MMBT4401WT1G
- Part Number:
- MMBT4401WT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845159-MMBT4401WT1G
- Description:
- TRANS NPN 40V 0.6A SOT323
- Datasheet:
- MMBT4401WT1G
ON Semiconductor MMBT4401WT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT4401WT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating600mA
- Frequency250MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT4401
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product250MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 1V
- Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage750mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min20
- Turn Off Time-Max (toff)255ns
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT4401WT1G Overview
DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT4401WT1G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMBT4401WT1G Applications
There are a lot of ON Semiconductor
MMBT4401WT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT4401WT1G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMBT4401WT1G Applications
There are a lot of ON Semiconductor
MMBT4401WT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT4401WT1G More Descriptions
MMBT Series 40 V 600 mA SMT NPN Silicon Switching Transistor - SOT-323
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
40V 150mW 100@150mA,1V 600mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 40V 0.6A 150mW Automotive 3-Pin SC-70 T/R
TRANSISTOR, NPN, 40V, 600MA, SOT-323-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 150mW; DC Collector Current: 600mA; DC Current Gain hFE: 20hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
40V 150mW 100@150mA,1V 600mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 40V 0.6A 150mW Automotive 3-Pin SC-70 T/R
TRANSISTOR, NPN, 40V, 600MA, SOT-323-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 150mW; DC Collector Current: 600mA; DC Current Gain hFE: 20hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
The three parts on the right have similar specifications to MMBT4401WT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)REACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightSeriesCurrent - Collector Cutoff (Max)Continuous Collector CurrentHeightLengthWidthPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBT4401WT1GACTIVE (Last Updated: 4 days ago)12 WeeksSurface MountSC-70, SOT-323YES3SILICON-55°C~150°C TJTape & Reel (TR)2010e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors40V150mWDUALGULL WING260600mA250MHz40MMBT440131Single150mWSWITCHING250MHzNPNNPN40V600mA100 @ 150mA 1V750mV @ 50mA, 500mA40V250MHz750mV40V60V6V20255nsNo SVHCNoROHS3 CompliantLead Free------------------
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-15 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mWSWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V120-No SVHCNoROHS3 CompliantLead FreeSurface Mount7.994566mgAutomotive, AEC-Q10150nA ICBO-200mA1mm3.05mm1.4mm---------
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--Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)------------MMBT3904-------NPN--100 @ 10mA 1V300mV @ 5mA, 50mA--------------------350mW40V200mA300MHz-----
-
-16 WeeksSurface MountSC-89, SOT-490-3-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)-----250mW----300MHz-MMBT2222-1Single250mW-300MHz-NPN40V600mA100 @ 150mA 1V1V @ 50mA, 500mA40V-1V40V75V6V75---ROHS3 CompliantLead FreeSurface Mount30mg---780μm1.7mm980μm250mW40V600mA300MHzSOT-523F150°C-55°CNPN100MHz
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