STMicroelectronics MMBT3906
- Part Number:
- MMBT3906
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465906-MMBT3906
- Description:
- TRANS PNP 40V 0.2A SOT23
- Datasheet:
- MMBT3906 Datasheet MMBT3906 Datasheet MMBT3906
STMicroelectronics MMBT3906 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MMBT3906.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
- Factory Lead Time31 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3
- Weight30mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-40V
- Max Power Dissipation350mW
- Current Rating-200mA
- Frequency250MHz
- Base Part NumberMMBT3906
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation350mW
- Power - Max350mW
- Gain Bandwidth Product250MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-40V
- Max Collector Current-200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)200mA
- Max Frequency250MHz
- Collector Emitter Saturation Voltage-400mV
- Max Breakdown Voltage40V
- Frequency - Transition250MHz
- Collector Base Voltage (VCBO)-40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min30
- Height1.2mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MMBT3906 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.There is a breakdown input voltage of 40V volts that it can take.The product comes in the supplier device package of SOT-23-3.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as -200mA volts at its maximum.
MMBT3906 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
the supplier device package of SOT-23-3
MMBT3906 Applications
There are a lot of ON Semiconductor
MMBT3906 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.There is a breakdown input voltage of 40V volts that it can take.The product comes in the supplier device package of SOT-23-3.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as -200mA volts at its maximum.
MMBT3906 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
the supplier device package of SOT-23-3
MMBT3906 Applications
There are a lot of ON Semiconductor
MMBT3906 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT3906 More Descriptions
Transistor GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R - Tape and Reel
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MMBT3906 Series 40 V 0.2 A 350 mW PNP General Purpose Amplifier - SOT-23
Transistor PNP, SOT-23 40V 200mASurface Mount
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transistor Case Style: SOT-23; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:300; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-250mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BT3906; Gain Bandwidth ft Min:250MHz; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; No. of Transistors:1; Noise Factor Max:4dB; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:2A; Termination Type:SMD; Voltage Vcbo:40V
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MMBT3906 Series 40 V 0.2 A 350 mW PNP General Purpose Amplifier - SOT-23
Transistor PNP, SOT-23 40V 200mASurface Mount
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transistor Case Style: SOT-23; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:300; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-250mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BT3906; Gain Bandwidth ft Min:250MHz; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; No. of Transistors:1; Noise Factor Max:4dB; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:2A; Termination Type:SMD; Voltage Vcbo:40V
The three parts on the right have similar specifications to MMBT3906.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusTransistor ApplicationPolarity/Channel TypeCurrent - Collector Cutoff (Max)Transition FrequencyContinuous Collector CurrentView Compare
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MMBT3906LAST SHIPMENTS (Last Updated: 4 days ago)31 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-330mg-55°C~150°C TJTape & Reel (TR)2017Obsolete1 (Unlimited)150°C-55°C-40V350mW-200mA250MHzMMBT39061PNPSingle350mW350mW250MHzPNP-40V-200mA100 @ 10mA 1V400mV @ 5mA, 50mA40V40V200mA250MHz-400mV40V250MHz-40V-5V301.2mm6.35mm6.35mmNo SVHCNoRoHS CompliantLead Free------------------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-7.994566mg-55°C~150°C TJTape & Reel (TR)2005Obsolete1 (Unlimited)--25V300mW200mA300MHzMMBT41241-Single300mW-300MHzNPN25V200mA120 @ 2mA 1V300mV @ 5mA, 50mA25V----25V-30V5V1201mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains LeadSILICONAutomotive, AEC-Q101e03EAR99DUALGULL WING235not_compliant103Not QualifiedSWITCHINGNPN50nA ICBO300MHz200mA
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---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)------MMBT3904----350mW-NPN--100 @ 10mA 1V300mV @ 5mA, 50mA-40V200mA---300MHz---------------------------
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-16 WeeksSurface MountSurface MountSC-89, SOT-4903SOT-523F30mg150°C TJTape & Reel (TR)2004Last Time Buy1 (Unlimited)150°C-55°C-250mW-300MHzMMBT22221NPNSingle250mW250mW300MHzNPN40V600mA100 @ 150mA 1V1V @ 50mA, 500mA40V40V600mA100MHz1V40V300MHz75V6V75780μm1.7mm980μm--ROHS3 CompliantLead Free-----------------
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