Nexperia USA Inc. MMBT3906,215
- Part Number:
- MMBT3906,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2465415-MMBT3906,215
- Description:
- TRANS PNP 40V 0.2A SOT23
- Datasheet:
- MMBT3906,215
Nexperia USA Inc. MMBT3906,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. MMBT3906,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT3906
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation250mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product250MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-40V
- Max Collector Current-200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)200mA
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage-400mV
- Collector Base Voltage (VCBO)-40V
- Emitter Base Voltage (VEBO)-6V
- hFE Min60
- Max Junction Temperature (Tj)150°C
- Ambient Temperature Range High150°C
- Turn On Time-Max (ton)70ns
- Height1.1mm
- RoHS StatusROHS3 Compliant
MMBT3906,215 Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as -200mA volts at Single BJT transistors maximum.
MMBT3906,215 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
a transition frequency of 250MHz
MMBT3906,215 Applications
There are a lot of Nexperia USA Inc.
MMBT3906,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as -200mA volts at Single BJT transistors maximum.
MMBT3906,215 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
a transition frequency of 250MHz
MMBT3906,215 Applications
There are a lot of Nexperia USA Inc.
MMBT3906,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT3906,215 More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MMBT3906 - 40 V, 200 mA PNP switching transistor
Transistor GP BJT PNP 40V 0.2A 3-Pin TO-236AB T/R - Tape and Reel
PNP switching transistor -40V -200mA SOT23(TO236AB) PBF
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
MMBT3906 - 40 V, 200 mA PNP switching transistor
Transistor GP BJT PNP 40V 0.2A 3-Pin TO-236AB T/R - Tape and Reel
PNP switching transistor -40V -200mA SOT23(TO236AB) PBF
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The three parts on the right have similar specifications to MMBT3906,215.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Ambient Temperature Range HighTurn On Time-Max (ton)HeightRoHS StatusPbfree CodeSubcategoryJESD-30 CodePower - MaxFrequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)MountWeightVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationCollector Emitter Breakdown VoltageMax Breakdown VoltageContinuous Collector CurrentLengthWidthREACH SVHCRadiation HardeningLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBT3906,2154 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1012009e3Active1 (Unlimited)3EAR99Tin (Sn)DUALGULL WING26040MMBT39063Not Qualified1SINGLE250mWSWITCHING250MHzPNPPNP-40V-200mA100 @ 10mA 1V50nA ICBO400mV @ 5mA, 50mA40V200mA250MHz-400mV-40V-6V60150°C150°C70ns1.1mmROHS3 Compliant----------------------------
-
12 WeeksSurface MountSOT-523YES-SILICON-55°C~150°C TJTape & Reel (TR)-2005e3Active1 (Unlimited)3EAR99Matte Tin (Sn)DUALGULL WING26010MMBT2222A3Not Qualified1SINGLE-AMPLIFIER-NPNNPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA40V600mA300MHz------35ns-ROHS3 CompliantyesOther TransistorsR-PDSO-G3150mW300MHz0.35W285ns--------------------
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15 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3Active1 (Unlimited)3EAR99Matte Tin (Sn)DUALGULL WING26040MMBT41263-1-300mWSWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA--250MHz-400mV25V-4V120---1mmROHS3 CompliantyesOther Transistors-----Surface Mount7.994566mg-25V300mW-200mA250MHzSingle25V25V-200mA3.05mm1.4mmNo SVHCNoLead Free-----
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16 WeeksSurface MountSC-89, SOT-490-3-150°C TJTape & Reel (TR)-2004-Last Time Buy1 (Unlimited)-------MMBT2222--1-250mW-300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V600mA-1V75V6V75---780μmROHS3 Compliant---250mW300MHz--Surface Mount30mg-250mW-300MHzSingle40V40V-1.7mm980μm--Lead FreeSOT-523F150°C-55°CNPN100MHz
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