ON Semiconductor MMBT3904WT1G
- Part Number:
- MMBT3904WT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465154-MMBT3904WT1G
- Description:
- TRANS NPN 40V 0.2A SOT323
- ECAD Model:
-
- Datasheet:
- MMBT3904WT1G
ON Semiconductor MMBT3904WT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT3904WT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time5 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating8.6A
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT3904
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product300MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min40
- Turn Off Time-Max (toff)250ns
- Turn On Time-Max (ton)70ns
- Height889μm
- Length2.1844mm
- Width1.3462mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT3904WT1G Description
The NPN Bipolar Transistor MMBT3904WT1G is designed for general purpose amplifier applications. It is packaged in the SOT323/SC70 package, which is intended for low power surface mount applications.
MMBT3904WT1G Features
Pb-Free Packages are Available
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space
MMBT3904WT1G Applications
Low power surface mount applications
The NPN Bipolar Transistor MMBT3904WT1G is designed for general purpose amplifier applications. It is packaged in the SOT323/SC70 package, which is intended for low power surface mount applications.
MMBT3904WT1G Features
Pb-Free Packages are Available
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space
MMBT3904WT1G Applications
Low power surface mount applications
MMBT3904WT1G More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Transistor GP BJT NPN 40V 0.2A 3-Pin SOT-323 T/R - Tape and Reel
40V 150mW 100@10mA,1V 200mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
MMBT Series 40 V 200 mA SMT NPN Silicon General Purpose Transistor - SOT-323
Transistor, Bipolar,Si,NPN,General Purpose,VCEO 40VDC,IC 200mA,PD 150mW,hFE 30 | ON Semiconductor MMBT3904WT1G
TRANSISTOR, NPN, 40V, 200MA, SOT-323-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: 200mA; DC Current Gain hFE: 40hFE;
NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.
Transistor GP BJT NPN 40V 0.2A 3-Pin SOT-323 T/R - Tape and Reel
40V 150mW 100@10mA,1V 200mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
MMBT Series 40 V 200 mA SMT NPN Silicon General Purpose Transistor - SOT-323
Transistor, Bipolar,Si,NPN,General Purpose,VCEO 40VDC,IC 200mA,PD 150mW,hFE 30 | ON Semiconductor MMBT3904WT1G
TRANSISTOR, NPN, 40V, 200MA, SOT-323-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: 200mA; DC Current Gain hFE: 40hFE;
NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.
The three parts on the right have similar specifications to MMBT3904WT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Turn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishJESD-30 CodeQualification StatusConfigurationPower - MaxPolarity/Channel TypeCurrent - Collector Cutoff (Max)Voltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)MountSeriesContinuous Collector CurrentView Compare
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MMBT3904WT1GACTIVE (Last Updated: 3 days ago)5 WeeksTinSurface MountSC-70, SOT-323YES34.535924gSILICON-55°C~150°C TJTape & Reel (TR)2000e3yesActive1 (Unlimited)3EAR99Other Transistors40V150mWDUALGULL WING2608.6A300MHz40MMBT390431Single150mWAMPLIFIER300MHzNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V300MHz300mV40V60V6V40250ns70ns889μm2.1844mm1.3462mmNo SVHCNoROHS3 CompliantLead Free--------------- -
-12 Weeks-Surface MountSOT-523YES--SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors--DUALGULL WING260--10MMBT2222A31--AMPLIFIER-NPN--75 @ 10mA 10V1V @ 50mA, 500mA-300MHz-----285ns35ns-----ROHS3 Compliant-Matte Tin (Sn)R-PDSO-G3Not QualifiedSINGLE150mWNPN100nA40V600mA300MHz0.35W---
-
-15 WeeksTinSurface MountSOT-523-32.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors40V150mWDUALGULL WING260200mA300MHz40MMBT390431Single150mW-300MHzNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100250ns70ns750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free-----NPN-----Surface MountAutomotive, AEC-Q101200mA
-
-15 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mWSWITCHING250MHzPNP25V200mA120 @ 2mA 1V400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V120--1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)----PNP50nA ICBO----Surface MountAutomotive, AEC-Q101-200mA
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