Fairchild/ON Semiconductor MMBT3640

Name: MMBT3640
Brand: Fairchild/ON Semiconductor
SKU: 2462920-MMBT3640
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBT3640

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2462920-MMBT3640

Description:: TRANS PNP 12V 0.2A SOT-23

ECAD Model:

Datasheet:: MMBT3640

Specifications

Fairchild/ON Semiconductor MMBT3640 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT3640.

Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Factory Lead Time
39 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH SPEED SATURATED SWITCHING
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-200mA
Frequency
500MHz
Base Part Number
MMBT3640
Number of Elements
1
Element Configuration
Single
Power Dissipation
225mW
Transistor Application
SWITCHING
Gain Bandwidth Product
500MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA 300mV
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
12V
Transition Frequency
500MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
-12V
Emitter Base Voltage (VEBO)
-4V
hFE Min
30
Turn On Time-Max (ton)
25ns
Height
930μm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMBT3640 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 10mA 300mV.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.In the part, the transition frequency is 500MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.

MMBT3640 Features
the DC current gain for this device is 30 @ 10mA 300mV
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at -4V
the current rating of this device is -200mA
a transition frequency of 500MHz

MMBT3640 Applications
There are a lot of ON Semiconductor
MMBT3640 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MMBT3640 More Descriptions

MMBT3640 Series 12 V 0.2 A 225 mW SMT PNP Switching Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 12V 0.08A 300mW 3-Pin SOT-23 T/R
PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics.
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Power Dissipation, Pd:0.225W; DC Current Gain Min (hfe):20; Package/Case:SOT-23; C-E Breakdown Voltage:12V; DC Collector Current:0.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to MMBT3640.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Current Rating

Frequency

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Turn On Time-Max (ton)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Continuous Collector Current

Termination

Current - Collector (Ic) (Max)

Max Junction Temperature (Tj)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Polarity

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Max Frequency

Frequency - Transition

View Compare
MMBT3640

Fairchild/ON Semiconductor

LIFETIME (Last Updated: 1 week ago)

39 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2017

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

HIGH SPEED SATURATED SWITCHING

Other Transistors

-12V

225mW

DUAL

GULL WING

-200mA

500MHz

MMBT3640

1

Single

225mW

SWITCHING

500MHz

PNP

PNP

12V

200mA

30 @ 10mA 300mV

10nA

600mV @ 5mA, 50mA

12V

500MHz

600mV

12V

-12V

-4V

30

25ns

930μm

2.92mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMBT4126-7-F

Diodes Incorporated

-

15 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

-25V

300mW

DUAL

GULL WING

-200mA

250MHz

MMBT4126

1

Single

300mW

SWITCHING

250MHz

PNP

PNP

25V

200mA

120 @ 2mA 1V

50nA ICBO

400mV @ 5mA, 50mA

25V

250MHz

-400mV

25V

25V

-4V

120

-

1mm

3.05mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

Automotive, AEC-Q101

Matte Tin (Sn)

260

40

3

-200mA

-

-

-

-

-

-

-

-

-

-

-

MMBT3640 vs MMBT4126-7-F
MMBT2907AT-7-F

Diodes Incorporated

-

15 Weeks

-

Surface Mount

Surface Mount

SOT-523

3

2.012816mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

-60V

150mW

DUAL

GULL WING

-600mA

200MHz

MMBT2907A

1

Single

150mW

-

200MHz

PNP

PNP

-60V

-600mA

100 @ 150mA 10V

10nA ICBO

1.6V @ 50mA, 500mA

-60V

200MHz

-1.6V

60V

-60V

-5V

100

45ns

900μm

1.6mm

800μm

No SVHC

No

ROHS3 Compliant

Lead Free

Automotive, AEC-Q101

Matte Tin (Sn) - annealed

260

30

3

-600mA

SMD/SMT

600mA

150°C

-

-

-

-

-

-

-

-

MMBT3640 vs MMBT2907AT-7-F
MMBT2222AT

Fairchild/ON Semiconductor

-

16 Weeks

-

Surface Mount

Surface Mount

SC-89, SOT-490

3

30mg

-

150°C TJ

Tape & Reel (TR)

2004

-

-

Last Time Buy

1 (Unlimited)

-

-

-

-

-

250mW

-

-

-

300MHz

MMBT2222

1

Single

250mW

-

300MHz

-

NPN

40V

600mA

100 @ 150mA 1V

-

1V @ 50mA, 500mA

40V

-

1V

40V

75V

6V

75

-

780μm

1.7mm

980μm

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

600mA

-

SOT-523F

150°C

-55°C

NPN

250mW

40V

100MHz

300MHz

MMBT3640 vs MMBT2222AT