ON Semiconductor MMBT2907ALT1G

Name: MMBT2907ALT1G
Brand: ON Semiconductor
SKU: 2462685-MMBT2907ALT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBT2907ALT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2462685-MMBT2907ALT1G

Description:: TRANS PNP 60V 0.6A SOT23

ECAD Model:

Datasheet:: MMBT2907ALT1G

Specifications

ON Semiconductor MMBT2907ALT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2907ALT1G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-600mA
Frequency
200MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MMBT2907A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
225mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-60V
Max Collector Current
-600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
-60V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-400mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Max Junction Temperature (Tj)
150°C
Turn On Time-Max (ton)
45ns
Height
1.11mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMBT2907ALT1G Description The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

MMBT2907ALT1G Features S Prefix for Automotive and Other Applications Requiring Unique The site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant

MMBT2907ALT1G More Descriptions

Transistor, Bipolar,Si,PNP,General Purpose,VCEO -60VDC,IC -600mA,PD 225mW,hFE 50
60V 300mW 100@150mA,10V 600mA PNP SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans General Purpose BJT PNP 60 Volt 1.2A 3-Pin SOT-23 Tape and Reel
Trans GP BJT PNP 60V 1.2A 350mW Automotive 3-Pin SOT-23 T/R
MMBT2907AL Series 60 V 600 mA SMT PNP General Purpose Transistor - SOT-23
Transistor, PNP, -60V, -600MA, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power
Bipolar Transistor, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:60V; Continuous Collector Current:600Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:200Mhzrohs Compliant: Yes |Onsemi MMBT2907ALT1G.
TRANSISTOR, PNP, -60V, -600MA, SOT-23-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 300mW; DC Collector Current: -600mA; DC Current Gain hFE: 50hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C

Product Comparison

The three parts on the right have similar specifications to MMBT2907ALT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Current - Collector (Ic) (Max)

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Max Junction Temperature (Tj)

Turn On Time-Max (ton)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Terminal Finish

JESD-30 Code

Configuration

Power - Max

Polarity/Channel Type

Frequency - Transition

Turn Off Time-Max (toff)

Weight

Series

Continuous Collector Current

Termination

View Compare
MMBT2907ALT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

10 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-60V

300mW

DUAL

GULL WING

260

-600mA

200MHz

40

MMBT2907A

3

1

Single

225mW

SWITCHING

200MHz

PNP

-60V

-600mA

100 @ 150mA 10V

10nA ICBO

1.6V @ 50mA, 500mA

-60V

600mA

200MHz

-400mV

60V

-60V

-5V

100

150°C

45ns

1.11mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
MMBT2222A-G

Comchip Technology

-

10 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e3

-

Active

1 (Unlimited)

3

-

Other Transistors

-

225mW

DUAL

GULL WING

NOT SPECIFIED

-

-

NOT SPECIFIED

-

-

1

-

-

SWITCHING

-

NPN

1V

600mA

100 @ 150mA 10mV

10nA

1V @ 50mA, 500mA

40V

-

300MHz

-

-

-

-

-

-

35ns

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

Tin (Sn)

R-PDSO-G3

SINGLE

300mW

NPN

300MHz

285ns

-

-

-

-

MMBT2907ALT1G vs MMBT2222A-G
MMBT4126-7-F

Diodes Incorporated

-

15 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-25V

300mW

DUAL

GULL WING

260

-200mA

250MHz

40

MMBT4126

3

1

Single

300mW

SWITCHING

250MHz

PNP

25V

200mA

120 @ 2mA 1V

50nA ICBO

400mV @ 5mA, 50mA

25V

-

250MHz

-400mV

25V

25V

-4V

120

-

-

1mm

3.05mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

Surface Mount

Matte Tin (Sn)

-

-

-

PNP

-

-

7.994566mg

Automotive, AEC-Q101

-200mA

-

MMBT2907ALT1G vs MMBT4126-7-F
MMBT2907AT-7-F

Diodes Incorporated

-

15 Weeks

-

Surface Mount

SOT-523

-

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-60V

150mW

DUAL

GULL WING

260

-600mA

200MHz

30

MMBT2907A

3

1

Single

150mW

-

200MHz

PNP

-60V

-600mA

100 @ 150mA 10V

10nA ICBO

1.6V @ 50mA, 500mA

-60V

600mA

200MHz

-1.6V

60V

-60V

-5V

100

150°C

45ns

900μm

1.6mm

800μm

No SVHC

No

ROHS3 Compliant

Lead Free

Surface Mount

Matte Tin (Sn) - annealed

-

-

-

PNP

-

-

2.012816mg

Automotive, AEC-Q101

-600mA

SMD/SMT

MMBT2907ALT1G vs MMBT2907AT-7-F