ON Semiconductor MMBT2369LT1G
- Part Number:
- MMBT2369LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845708-MMBT2369LT1G
- Description:
- TRANS NPN 15V 0.2A SOT23
- Datasheet:
- MMBT2369LT1G
ON Semiconductor MMBT2369LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2369LT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC15V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT2369
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Power - Max225mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)15V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA 350mV
- Current - Collector Cutoff (Max)400nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage15V
- Transition Frequency500MHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage15V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)4.5V
- hFE Min40
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT2369LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 350mV DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4.5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 500MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT2369LT1G Features
the DC current gain for this device is 40 @ 10mA 350mV
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MMBT2369LT1G Applications
There are a lot of ON Semiconductor
MMBT2369LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 350mV DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4.5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 500MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT2369LT1G Features
the DC current gain for this device is 40 @ 10mA 350mV
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MMBT2369LT1G Applications
There are a lot of ON Semiconductor
MMBT2369LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2369LT1G More Descriptions
ON Semi MMBT2369LT1G NPN Bipolar Transistor; 0.2 A; 15 V; 3-Pin SOT-23
Trans GP BJT NPN 15V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
MMBT Series 15 V 200 mA Surface Mount NPN Silicon Switching Transistor - SOT-23
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
400nA 15V 225mW 200mA 40@10mA1V 250mV@10mA1mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR, NPN, 15V; TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; Available until stocks are exhausted Alternative available
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:15V; Dc Collector Current:200Ma; Power Dissipation Pd:300Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:120Hfe Rohs Compliant: Yes
Trans GP BJT NPN 15V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
MMBT Series 15 V 200 mA Surface Mount NPN Silicon Switching Transistor - SOT-23
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
400nA 15V 225mW 200mA 40@10mA1V 250mV@10mA1mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR, NPN, 15V; TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; Available until stocks are exhausted Alternative available
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:15V; Dc Collector Current:200Ma; Power Dissipation Pd:300Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:120Hfe Rohs Compliant: Yes
The three parts on the right have similar specifications to MMBT2369LT1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishJESD-30 CodeQualification StatusConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)MountSeriesReach Compliance CodeFrequencyGain Bandwidth ProductContinuous Collector CurrentSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBT2369LT1GACTIVE (Last Updated: 3 days ago)10 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES34.535924gSILICON-55°C~150°C TJTape & Reel (TR)2004e3yesActive1 (Unlimited)3EAR99Other Transistors15V300mWDUALGULL WING260200mA40MMBT236931Single300mW225mWSWITCHINGNPNNPN15V200mA40 @ 10mA 350mV400nA250mV @ 1mA, 10mA15V500MHz250mV15V40V4.5V40940μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free----------------------
-
-12 Weeks-Surface MountSOT-523YES--SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors--DUALGULL WING260-10MMBT2222A31--150mWAMPLIFIERNPNNPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz----------ROHS3 Compliant-Matte Tin (Sn)R-PDSO-G3Not QualifiedSINGLE40V600mA300MHz0.35W285ns35ns-----------
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---Surface MountTO-236-3, SC-59, SOT-23-3-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99-25V300mWDUALGULL WING235200mA10MMBT412431Single300mW-SWITCHINGNPNNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz-25V30V5V1201mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains Lead--Not Qualified-------Surface MountAutomotive, AEC-Q101not_compliant300MHz300MHz200mA-----
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-16 Weeks-Surface MountSC-89, SOT-490-330mg-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)----250mW-----MMBT2222-1Single250mW250mW--NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V75V6V75780μm1.7mm980μm--ROHS3 CompliantLead Free----40V600mA300MHz---Surface Mount--300MHz300MHz-SOT-523F150°C-55°CNPN100MHz
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