MMBT2369LT1G

ON Semiconductor MMBT2369LT1G

Part Number:
MMBT2369LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2845708-MMBT2369LT1G
Description:
TRANS NPN 15V 0.2A SOT23
ECAD Model:
Datasheet:
MMBT2369LT1G

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Specifications
ON Semiconductor MMBT2369LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2369LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    15V
  • Max Power Dissipation
    300mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    200mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBT2369
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Power - Max
    225mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    15V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 10mA 350mV
  • Current - Collector Cutoff (Max)
    400nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 1mA, 10mA
  • Collector Emitter Breakdown Voltage
    15V
  • Transition Frequency
    500MHz
  • Collector Emitter Saturation Voltage
    250mV
  • Max Breakdown Voltage
    15V
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    4.5V
  • hFE Min
    40
  • Height
    940μm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBT2369LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 350mV DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4.5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 500MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 200mA volts.

MMBT2369LT1G Features
the DC current gain for this device is 40 @ 10mA 350mV
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz


MMBT2369LT1G Applications
There are a lot of ON Semiconductor
MMBT2369LT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT2369LT1G More Descriptions
ON Semi MMBT2369LT1G NPN Bipolar Transistor; 0.2 A; 15 V; 3-Pin SOT-23
Trans GP BJT NPN 15V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
MMBT Series 15 V 200 mA Surface Mount NPN Silicon Switching Transistor - SOT-23
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
400nA 15V 225mW 200mA 40@10mA1V 250mV@10mA1mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR, NPN, 15V; TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; Available until stocks are exhausted Alternative available
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:15V; Dc Collector Current:200Ma; Power Dissipation Pd:300Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:120Hfe Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to MMBT2369LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    JESD-30 Code
    Qualification Status
    Configuration
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Power Dissipation-Max (Abs)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Mount
    Series
    Reach Compliance Code
    Frequency
    Gain Bandwidth Product
    Continuous Collector Current
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Max Frequency
    View Compare
  • MMBT2369LT1G
    MMBT2369LT1G
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2004
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    15V
    300mW
    DUAL
    GULL WING
    260
    200mA
    40
    MMBT2369
    3
    1
    Single
    300mW
    225mW
    SWITCHING
    NPN
    NPN
    15V
    200mA
    40 @ 10mA 350mV
    400nA
    250mV @ 1mA, 10mA
    15V
    500MHz
    250mV
    15V
    40V
    4.5V
    40
    940μm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2222AT-TP
    -
    12 Weeks
    -
    Surface Mount
    SOT-523
    YES
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -
    -
    DUAL
    GULL WING
    260
    -
    10
    MMBT2222A
    3
    1
    -
    -
    150mW
    AMPLIFIER
    NPN
    NPN
    -
    -
    75 @ 10mA 10V
    100nA
    1V @ 50mA, 500mA
    -
    300MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    R-PDSO-G3
    Not Qualified
    SINGLE
    40V
    600mA
    300MHz
    0.35W
    285ns
    35ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT4124-7
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    25V
    300mW
    DUAL
    GULL WING
    235
    200mA
    10
    MMBT4124
    3
    1
    Single
    300mW
    -
    SWITCHING
    NPN
    NPN
    25V
    200mA
    120 @ 2mA 1V
    50nA ICBO
    300mV @ 5mA, 50mA
    25V
    300MHz
    -
    25V
    30V
    5V
    120
    1mm
    3.05mm
    1.4mm
    No SVHC
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    Not Qualified
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    Automotive, AEC-Q101
    not_compliant
    300MHz
    300MHz
    200mA
    -
    -
    -
    -
    -
  • MMBT2222AT
    -
    16 Weeks
    -
    Surface Mount
    SC-89, SOT-490
    -
    3
    30mg
    -
    150°C TJ
    Tape & Reel (TR)
    2004
    -
    -
    Last Time Buy
    1 (Unlimited)
    -
    -
    -
    -
    250mW
    -
    -
    -
    -
    -
    MMBT2222
    -
    1
    Single
    250mW
    250mW
    -
    -
    NPN
    40V
    600mA
    100 @ 150mA 1V
    -
    1V @ 50mA, 500mA
    40V
    -
    1V
    40V
    75V
    6V
    75
    780μm
    1.7mm
    980μm
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    40V
    600mA
    300MHz
    -
    -
    -
    Surface Mount
    -
    -
    300MHz
    300MHz
    -
    SOT-523F
    150°C
    -55°C
    NPN
    100MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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