Fairchild/ON Semiconductor MMBT2369A
- Part Number:
- MMBT2369A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463277-MMBT2369A
- Description:
- TRANS NPN 15V 0.2A SOT-23
- Datasheet:
- PN2369A, MMBT2369A
Fairchild/ON Semiconductor MMBT2369A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT2369A.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Additional FeatureHIGH SPEED SATURATED SWITCHING
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max225mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA 1V
- Current - Collector Cutoff (Max)400nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)15V
- Current - Collector (Ic) (Max)200mA
- Turn Off Time-Max (toff)18ns
- Turn On Time-Max (ton)12ns
- RoHS StatusROHS3 Compliant
MMBT2369A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 15V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MMBT2369A Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
MMBT2369A Applications
There are a lot of Rochester Electronics, LLC
MMBT2369A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 15V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MMBT2369A Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
MMBT2369A Applications
There are a lot of Rochester Electronics, LLC
MMBT2369A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2369A More Descriptions
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 40 @ 10mA 1V 200mA 225mW 500MHz
MMBT2369A Series 15 V 200 mA NPN Surface Mount Switching Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 15V 0.2A 3-Pin SOT-23 T/R - Tape and Reel
MMBT2369A,@ TRANSISTOR, MMBT23 69A, 1JA, SOT-23 NPN SILICON
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 40hFE; Transistor Case Styl
NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.
MMBT2369A Series 15 V 200 mA NPN Surface Mount Switching Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 15V 0.2A 3-Pin SOT-23 T/R - Tape and Reel
MMBT2369A,@ TRANSISTOR, MMBT23 69A, 1JA, SOT-23 NPN SILICON
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 40hFE; Transistor Case Styl
NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.
The three parts on the right have similar specifications to MMBT2369A.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Turn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusFactory Lead TimePublishedECCN CodeSubcategoryBase Part NumberPin CountTransition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)Contact PlatingMountNumber of PinsWeightSeriesVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBT2369ASurface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)3MATTE TINHIGH SPEED SATURATED SWITCHINGDUALGULL WING26030R-PDSO-G3COMMERCIAL1SINGLE225mWSWITCHINGNPNNPN40 @ 10mA 1V400nA ICBO500mV @ 10mA, 100mA15V200mA18ns12nsROHS3 Compliant------------------------------------------
-
Surface MountSOT-523YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3Matte Tin (Sn)-DUALGULL WING26010R-PDSO-G3Not Qualified1SINGLE150mWAMPLIFIERNPNNPN75 @ 10mA 10V100nA1V @ 50mA, 500mA40V600mA285ns35nsROHS3 Compliant12 Weeks2005EAR99Other TransistorsMMBT2222A3300MHz300MHz0.35W--------------------------------
-
Surface MountSOT-523-SILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3--DUALGULL WING26040--1---NPNNPN100 @ 10mA 1V-300mV @ 5mA, 50mA--250ns70nsROHS3 Compliant15 Weeks2007EAR99Other TransistorsMMBT39043300MHz--TinSurface Mount32.012816mgAutomotive, AEC-Q10140V150mW200mA300MHzSingle150mW300MHz40V200mA40V300mV40V60V6V100200mA750μm1.6mm800μmNo SVHCNoLead Free-----
-
Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)--Active1 (Unlimited)---------1-300mW--NPN100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V200mA--ROHS3 Compliant15 Weeks2000--MMBT3904--300MHz-TinSurface Mount37.994566mgAutomotive, AEC-Q10140V300mW-300MHzSingle350mW300MHz40V200mA40V300mV40V60V6V100200mA1mm3.05mm1.4mmNo SVHCNoLead FreeSOT-23-3150°C-55°CNPN300MHz
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