ON Semiconductor MMBT2222LT3G
- Part Number:
- MMBT2222LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472212-MMBT2222LT3G
- Description:
- TRANS NPN 30V 0.6A SOT-23
- Datasheet:
- MMBT2222LT3G
ON Semiconductor MMBT2222LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2222LT3G.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency250MHz
- Frequency - Transition250MHz
- Turn Off Time-Max (toff)285ns
- Turn On Time-Max (ton)35ns
- RoHS StatusROHS3 Compliant
MMBT2222LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The part has a transition frequency of 250MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
MMBT2222LT3G Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 250MHz
MMBT2222LT3G Applications
There are a lot of Rochester Electronics, LLC
MMBT2222LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The part has a transition frequency of 250MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
MMBT2222LT3G Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 250MHz
MMBT2222LT3G Applications
There are a lot of Rochester Electronics, LLC
MMBT2222LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2222LT3G More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 300mW 250MHz
NPN Bipolar Transistor
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 300mW 250MHz
NPN Bipolar Transistor
The three parts on the right have similar specifications to MMBT2222LT3G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusFactory Lead TimeMountNumber of PinsWeightSeriesPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTerminationMax Junction Temperature (Tj)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBT2222LT3GSurface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)3MATTE TINDUALGULL WING260403R-PDSO-G3COMMERCIAL1SINGLE300mWSWITCHINGNPNNPN100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA30V600mA250MHz250MHz285ns35nsROHS3 Compliant---------------------------------------
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Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3Matte Tin (Sn)DUALGULL WING260403--1--SWITCHINGPNPPNP120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA--250MHz---ROHS3 Compliant15 WeeksSurface Mount37.994566mgAutomotive, AEC-Q1012008EAR99Other Transistors-25V300mW-200mA250MHzMMBT4126Single300mW250MHz25V200mA25V-400mV25V25V-4V120-200mA1mm3.05mm1.4mmNo SVHCNoLead Free-------
-
Surface MountSOT-523-SILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3Matte Tin (Sn) - annealedDUALGULL WING260303--1---PNPPNP100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-600mA200MHz--45nsROHS3 Compliant15 WeeksSurface Mount32.012816mgAutomotive, AEC-Q1012007EAR99Other Transistors-60V150mW-600mA200MHzMMBT2907ASingle150mW200MHz-60V-600mA-60V-1.6V60V-60V-5V100-600mA900μm1.6mm800μmNo SVHCNoLead FreeSMD/SMT150°C-----
-
Surface MountSC-89, SOT-490--150°C TJTape & Reel (TR)--Last Time Buy1 (Unlimited)---------1-250mW--NPN100 @ 150mA 1V-1V @ 50mA, 500mA40V600mA-300MHz--ROHS3 Compliant16 WeeksSurface Mount330mg-2004---250mW-300MHzMMBT2222Single250mW300MHz40V600mA40V1V40V75V6V75-780μm1.7mm980μm--Lead Free--SOT-523F150°C-55°CNPN100MHz
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