MMBT2222LT3G

ON Semiconductor MMBT2222LT3G

Part Number:
MMBT2222LT3G
Manufacturer:
ON Semiconductor
Ventron No:
2472212-MMBT2222LT3G
Description:
TRANS NPN 30V 0.6A SOT-23
ECAD Model:
Datasheet:
MMBT2222LT3G

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Specifications
ON Semiconductor MMBT2222LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2222LT3G.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    300mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Current - Collector (Ic) (Max)
    600mA
  • Transition Frequency
    250MHz
  • Frequency - Transition
    250MHz
  • Turn Off Time-Max (toff)
    285ns
  • Turn On Time-Max (ton)
    35ns
  • RoHS Status
    ROHS3 Compliant
Description
MMBT2222LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The part has a transition frequency of 250MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).

MMBT2222LT3G Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 250MHz


MMBT2222LT3G Applications
There are a lot of Rochester Electronics, LLC
MMBT2222LT3G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT2222LT3G More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 300mW 250MHz
NPN Bipolar Transistor
Product Comparison
The three parts on the right have similar specifications to MMBT2222LT3G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    RoHS Status
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Series
    Published
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Base Part Number
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Termination
    Max Junction Temperature (Tj)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Max Frequency
    View Compare
  • MMBT2222LT3G
    MMBT2222LT3G
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    DUAL
    GULL WING
    260
    40
    3
    R-PDSO-G3
    COMMERCIAL
    1
    SINGLE
    300mW
    SWITCHING
    NPN
    NPN
    100 @ 150mA 10V
    10nA ICBO
    1.6V @ 50mA, 500mA
    30V
    600mA
    250MHz
    250MHz
    285ns
    35ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT4126-7-F
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    Matte Tin (Sn)
    DUAL
    GULL WING
    260
    40
    3
    -
    -
    1
    -
    -
    SWITCHING
    PNP
    PNP
    120 @ 2mA 1V
    50nA ICBO
    400mV @ 5mA, 50mA
    -
    -
    250MHz
    -
    -
    -
    ROHS3 Compliant
    15 Weeks
    Surface Mount
    3
    7.994566mg
    Automotive, AEC-Q101
    2008
    EAR99
    Other Transistors
    -25V
    300mW
    -200mA
    250MHz
    MMBT4126
    Single
    300mW
    250MHz
    25V
    200mA
    25V
    -400mV
    25V
    25V
    -4V
    120
    -200mA
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • MMBT2907AT-7-F
    Surface Mount
    SOT-523
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    Matte Tin (Sn) - annealed
    DUAL
    GULL WING
    260
    30
    3
    -
    -
    1
    -
    -
    -
    PNP
    PNP
    100 @ 150mA 10V
    10nA ICBO
    1.6V @ 50mA, 500mA
    -
    600mA
    200MHz
    -
    -
    45ns
    ROHS3 Compliant
    15 Weeks
    Surface Mount
    3
    2.012816mg
    Automotive, AEC-Q101
    2007
    EAR99
    Other Transistors
    -60V
    150mW
    -600mA
    200MHz
    MMBT2907A
    Single
    150mW
    200MHz
    -60V
    -600mA
    -60V
    -1.6V
    60V
    -60V
    -5V
    100
    -600mA
    900μm
    1.6mm
    800μm
    No SVHC
    No
    Lead Free
    SMD/SMT
    150°C
    -
    -
    -
    -
    -
  • MMBT2222AT
    Surface Mount
    SC-89, SOT-490
    -
    -
    150°C TJ
    Tape & Reel (TR)
    -
    -
    Last Time Buy
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    250mW
    -
    -
    NPN
    100 @ 150mA 1V
    -
    1V @ 50mA, 500mA
    40V
    600mA
    -
    300MHz
    -
    -
    ROHS3 Compliant
    16 Weeks
    Surface Mount
    3
    30mg
    -
    2004
    -
    -
    -
    250mW
    -
    300MHz
    MMBT2222
    Single
    250mW
    300MHz
    40V
    600mA
    40V
    1V
    40V
    75V
    6V
    75
    -
    780μm
    1.7mm
    980μm
    -
    -
    Lead Free
    -
    -
    SOT-523F
    150°C
    -55°C
    NPN
    100MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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